INTERSIL HGTG34N100E2

HGTG34N100E2
34A, 1000V N-Channel IGBT
April 1995
Features
Package
• 34A, 1000V
JEDEC STYLE TO-247
• Latch Free Operation
• Typical Fall Time - 710ns
EMITTER
COLLECTOR
GATE
COLLECTOR
(BOTTOM SIDE
METAL)
• High Input Impedance
• Low Conduction Loss
Description
The HGTG34N100E2 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately
between +25oC and +150oC.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
The IGBTs are ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
C
PACKAGING AVAILABILITY
PART NUMBER
HGTG34N100E2
PACKAGE
BRAND
TO-247
G
G34N100E2
NOTE: When ordering, use the entire part number.
E
Formerly Developmental Type TA9895.
Absolute Maximum Ratings
TC = +25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector-Gate Voltage, RGE =1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
at VGE = 15V, at TC = +90oC . . . . . . . . . . . . . . . . . . . IC90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
HGTG34N100E2
1000
1000
55
34
200
±20
±30
200A at 0.8 BVCES
208
1.67
-55 to +150
260
3
10
UNITS
V
V
A
A
A
V
V
W
W/oC
oC
oC
µs
µs
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PEAK) = 600V, TC = +125oC, RGE = 25Ω.
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-124
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
File Number
2827.3
Specifications HGTG34N100E2
Electrical Specifications
TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETERS
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Voltage
Collector-Emitter Saturation Voltage
SYMBOL
BVCES
ICES
VCE(SAT)
TEST CONDITIONS
IC = 250µA, VGE = 0V
TYP
MAX
UNITS
1000
-
-
V
VCE = BVCES
TC = +25oC
-
-
1.0
mA
VCE = 0.8 BVCES
TC = +125oC
-
-
4.0
mA
IC = IC90,
VGE = 15V
TC = +25oC
-
2.8
3.2
V
TC = +125oC
-
2.8
3.1
V
TC = +25oC
-
2.9
3.3
V
TC = +125oC
-
3.0
3.4
V
TC = +25oC
3.0
4.5
6.0
V
IC = IC90,
VGE = 10V
Gate-Emitter Threshold Voltage
MIN
VGE(TH)
IC = 1mA,
VCE = VGE
Gate-Emitter Leakage Current
IGES
VGE = ±20V
-
-
±500
nA
Gate-Emitter Plateau Voltage
VGEP
IC = IC90, VCE = 0.5 BVCES
-
7.3
-
V
IC = IC90,
VCE = 0.5 BVCES
VGE = 15V
-
185
240
nC
VGE = 20V
-
240
315
nC
L = 50µH, IC = IC90, RG = 25Ω,
VGE = 15V, TJ = +125oC,
VCE = 0.8 BVCES
-
100
-
ns
-
150
-
ns
tD(OFF)I
-
610
795
ns
tFI
-
710
925
ns
Turn-Off Energy (Note 1)
WOFF
-
7.1
-
mJ
Current Turn-On Delay Time
tD(ON)I
-
100
-
ns
-
150
-
ns
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Current Rise Time
QG(ON)
tD(ON)I
tRI
tRI
L = 50µH, IC = IC90, RG = 25Ω,
VGE = 10V, TJ = +125oC,
VCE = 0.8 BVCES
Current Turn-Off
tD(OFF)I
-
460
600
ns
Current Fall Time
tFI
-
670
870
ns
Turn-Off Energy (Note 1)
WOFF
-
6.5
-
mJ
Thermal Resistance
RθJC
-
0.5
0.6
oC/W
NOTE: 1. Turn-Off Energy Loss (WOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A) The HGTG34N100E2 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3-125
HGTG34N100E2
Typical Performance Curves
100
ICE, COLLECTOR-EMITTER CURRENT (A)
90
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VCE = 10V
80
70
60
TC = +150oC
50
40
TC =
+25oC
30
TC = -40oC
20
10
0
80
VGE = 10V
70
60
VGE = 8.0V
50
40
VGE = 7.0V
30
20
VGE = 6.5V
10
VGE = 6.0V
0
0
2
4
6
8
0
10
2
VGE, GATE-TO-EMITTER VOLTAGE (V)
6
8
10
FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
2.0
60
VGE = 10V AND 15V, TJ = +150oC,
RG = 25Ω, L = 50µH
50
VGE = 15V
1.5
tFI , FALL TIME (µs)
ICE, DC COLLECTOR CURRENT (A)
4
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL)
40
VGE = 10V
30
20
VCE = 800V
1.0
VCE = 400V
0.5
10
0
+25
0.0
+50
+75
+100
+125
+150
1
10
TC , CASE TEMPERATURE (oC)
f = 1MHz
8000
CISS
6000
4000
2000
FIGURE 4. FALL TIME vs COLLECTOR-EMITTER CURRENT
VCE, COLLECTOR-EMITTER VOLTAGE (V)
10000
COSS
CRSS
0
0
100
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE
C, CAPACITANCE (pF)
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%
TC = +25oC
VGE = 15V
90
5
10
15
20
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
1000
10
VCC =
BVCES
750
7.5
500
FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE
3-126
0.75 BVCES
0.75 BVCES
0.50 BVCES
0.50 BVCES
0.25 BVCES
0.25 BVCES
5.0
RL = 29.4Ω
IG(REF) = 4.0mA
VGE = 10V
250
2.5
0
0
20
25
VCC =
BVCES
VGE, GATE-EMITTER VOLTAGE (V)
ICE, COLLECTOR-EMITTER CURRENT (A)
100
IG(REF)
IG(ACT)
TIME (µs)
80
IG(REF)
IG(ACT)
FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT (REFER TO APPLICATION
NOTES AN7254 AND AN7260)
HGTG34N100E2
Typical Performance Curves (Continued)
100
TJ = +150oC
WOFF , TURN-OFF SWITCHING LOSS (mJ)
VCE(ON), SATURATION VOLTAGE (V)
7
6
5
VGE = 10V
4
3
VGE = 15V
2
1
TJ = +150oC, RG = 25Ω,
L = 50µH
10
VCE = 800V, VGE = 10V AND 15V
1.0
VCE = 400V, VGE = 10V AND 15V
0.1
0
1
10
1
100
10
100
ICE, COLLECTOR-EMITTER CURRENT (A)
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 7. SATURATION VOLTAGE vs COLLECTOR-EMITTER
CURRENT
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOREMITTER CURRENT
100
TJ = +150oC
fOP , OPERATING FREQUENCY (kHz)
tD(OFF)I , TURN-OFF DELAY (µs)
2.0
VCE = 800V
L = 50µH
1.5
VGE = 15V, RG = 50Ω
VGE = 10V, RG = 50Ω
1.0
VGE = 15V, RG = 25Ω
0.5
VGE = 10V, RG = 25Ω
VCE = 400V
VGE = 15V
fMAX1 = 0.05/tD(OFF)I
fMAX2 = (PD - PC)/WOFF
DUTY FACTOR = 50%
RθJC = 0.5oC/W
10
TJ = +150oC, TC = +75oC,
RG = 25Ω, L = 50µH
1
1
10
0.0
1
10
NOTE:
PD = ALLOWABLE DISSIPATION
100
FIGURE 9. TURN-OFF DELAY vs COLLECTOR-EMITTER
CURRENT
ICE , COLLECTOR-EMITTER CURRENT (A)
VGE = 10V
TJ = +25oC
TJ = +150oC
1
1
2
PC = CONDUCTION DISSIPATION
FIGURE 10. OPERATING FREQUENCY vs COLLECTOREMITTER CURRENT AND VOLTAGE
100
0
80
ICE, COLLECTOR-EMITTER CURRENT (A)
ICE, COLLECTOR-EMITTER CURRENT (A)
10
VCE = 800V
VGE = 15V
3
4
5
6
7
VCE(ON), SATURATION VOLTAGE (V)
FIGURE 11. COLLECTOR-EMITTER SATURATION VOLTAGE
3-127
HGTG34N100E2
Test Circuit
L = 50µH
1/RG = 1/RGEN + 1/RGE
VCC
800V
RGEN = 50Ω
+
-
20V
RGE = 50Ω
0V
FIGURE 12. INDUCTION SWITCHING TEST CIRCUIT
Operating Frequency Information
Operating frequency information for a typical device (Figure
10) is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (ICE) plots are possible using the information shown
for a typical unit in Figures 7, 8 and 9. The operating
frequency plot (Figure 10) of a typical device shows fMAX1 or
fMAX2 whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
fMAX1 is defined by fMAX1 = 0.05/tD(OFF)I. tD(OFF)I deadtime
(the denominator) has been arbitrarily held to 10% of the onstate time for a 50% duty factor. Other definitions are possible.
tD(OFF)I is defined as the time between the 90% point of the
trailing edge of the input pulse and the point where the
collector current falls to 90% of its maximum value. Device
turn-off delay can establish an additional frequency limiting
condition for an application other than TJMAX. tD(OFF)I is
important when controlling output ripple under a lightly loaded
condition.
fMAX2 is defined by fMAX2 = (PD - PC)/WOFF . The allowable
dissipation (PD) is defined by PD = (TJMAX - TC)/RθJC. The sum
of device switching and conduction losses must not exceed PD.
A 50% duty factor was used (Figure 10) and the conduction
losses (PC) are approximated by PC = (VCE • ICE)/2. WOFF is
defined as the integral of the instantaneous power loss starting
at the trailing edge of the input pulse and ending at the point
where the collector current equals zero (ICE = 0A).
The switching power loss (Figure 10) is defined as fMAX2 •
WOFF. Turn-on switching losses are not included because they
can be greatly influenced by external circuit conditions and components.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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