IL215AT/216AT/217AT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER FEATURES Package Dimensions in Inches (mm) • High Current Transfer Ratio, IF=1 mA • • • • • • • IL215AT, 20% Minimum IL216AT, 50% Minimum IL217AT, 100% Minimum Isolation Voltage, 2500 VACRMS Electrical Specifications Similar to Standard 6 Pin Coupler Industry Standard SOIC-8 Surface Mountable Package Standard Lead Spacing, .05" Available in Tape and Reel (suffix T) (Conforms to EIA Standard RS481A) Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering Underwriters Lab File #E52744 (Code Letter P) DESCRIPTION The IL215AT/216AT/217AT is an optically coupled pair with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL215AT/ 216AT/217AT comes in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating throughholes requirements, this package conforms to standards for surface mounted devices. The high CTR at low input current is designed for low power consumption requirements such as CMOS microprocessor interfaces. Maximum Ratings Emitter Peak Reverse Voltage ............................................ 6.0 V Continuous Forward Current ............................... 60 mA Power Dissipation at 25°C .................................. 90 mW Derate Linearly from 25°C ............................ 1.2 mW/°C Detector Collector-Emitter Breakdown Voltage ..................... 30 V Emitter-Collector Breakdown Voltage ....................... 7 V Collector-Base Breakdown Voltage ........................ 70 V Power Dissipation ............................................. 150 mW Derate Linearly from 25°C ............................ 2.0 mW/°C Package Total Package Dissipation at 25°C Ambient (LED + Detector) ........................................... 280 mW Derate Linearly from 25°C ............................ 3.3 mW/°C Storage Temperature .......................... –55°C to +150°C Operating Temperature ...................... –55°C to +100°C Soldering Time at 260°C .................................... 10 sec. Semiconductor Group .120±.005 (3.05±.13) .240 (6.10) Anode 1 .154±.005 Cathode 2 CL (3.91±.13) NC 3 NC 4 .016 (.41) Pin One ID .192±.005 (4.88±.13) 40° .015±.002 (.38±.05) .004 (.10) .008 (.20) .008 (.20) .050 (1.27) typ. .021 (.53) 8 7 6 5 7° .058±.005 (1.49±.13) 5° max. R.010 (.25) max. .020±.004 (.15±.10) 2 plcs. NC Base Collector Emitter .125±.005 (3.18±.13) Lead Coplanarity ±.0015 (.04) max. TOLERANCE: ±.005 (unless otherwise noted) Characteristics (TA=25°C) Emitter Forward Voltage Reverse Current Capacitance Detector Breakdown Voltage Collector-Emitter Emitter-Collector Collector-Emitter Dark Current Collector-Emitter Capacitance Package DC Current Transfer IL215AT IL216AT IL217AT Collector-Emitter Saturation Voltage Isolation Test Voltage Capacitance, Input to Output Resistance, Input to Output Switching Time Symbol Min. Typ. Max. Unit Condition VF IR CO 1.5 100 V µA pF IF=1 mA VR=6.0 V V R=0 V V nA IC=10 µA IE=10 µA VCE=10 V, IF =0 pF V CE=0 % IF=1 mA VCE=5 V BVCEO BVECO 1.0 0.1 25 30 7 I CEOdark 5 CCE 10 50 CTRDC 20 50 100 50 80 130 VCE sat V IO IC=0.1 mA, IF=1 mA 0.4 2500 VACRMS C IO 0.5 pF R IO tON, tOFF 100 3.0 GΩ µs IC=2 mA, RE=100 Ω, VCE=10 V Specifications subject to change. 4–7 10.95 Figure 2. Normalized non-saturated and saturated CTRce versus LED current Figure 1. Forward voltage versus forward current 1.3 NCTRce - Normalized CTRce VF - Forward Voltage - V 1.4 Ta = -55°C 1.2 Ta = 25°C 1.1 1.0 0.9 Ta = 85°C 0.8 0.7 .1 1 10 IF - Forward Current - mA 1.5 1.0 Vce = 0.4 V 0.0 .1 100 50 Vce = 0.4 V NIcb - Normalized Icb Ice - Collector-emitter Current - mA Vce = 10 V Normalized to: Vcb = 9.3 V IF = 1 mA 10 Ta = 25 °C 1 .1 0 .1 100 Figure 5. Collector-base photocurrent versus LED current Iceo - Collector-Emitter - nA Icb - Collector-base Current - µA 1 10 IF - LED Current - mA 1000 Ta = 25°C Vcb = 9.3 V 10 1 .1 .1 1 10 100 10 TYPICAL 10 -1 10 -2 -20 25°C 1.5 Normalized to: Ib = 20µA Vce = 10 V Ta = 25 °C 1.0 Vce = 0.4 V 0.5 0.0 1 10 100 Ib - Base Current - µA Semiconductor Group NCTRce - Normalized CTRce NHFE(sat) - Normalized Saturated HFE 50°C 100 Vce = 10V 1 10 0 Figure 7. Normalized saturated HFE versus base current and temperature 70°C 1 10 IF - LED Current - mA Figure 6. Collector-emitter leakage current versus temperature 5 10 4 10 3 10 10 2 IF - LED Current - mA 2.0 100 100 100 100 1 10 IF - LED Current - mA Figure 4. Normalized collector-base photocurrent versus LED current Ta = 25°C .1 Vce = 5 V 0.5 Figure 3. Collector-emitter current versus LED current 150 Normalized to: Vce = 10 V IF = 10 mA Ta = 25°C 1000 Figure 8. Normalized non-saturated and saturated CTRce versus LED current 2.0 Normalized to: Vce = 5 V Ta = 25 °C Vce = 5 V 1.5 IF = 1 mA 1.0 0.5 Vce = .4 V 0.0 .1 4–8 0 20 40 60 80 100 Ta - Ambient Temperature - °C 1 10 IF - LED Current - mA 100 Figure 10. Normalized collector-base photocurrent versus LED current Figure 9. Normalized non-saturated and saturated collector-emitter current versus LED current Vce = 5 V Normalized to: Ta = 25°C Vce = 5 V IF = 1 mA 10 100 Vce = .4 V 1 .1 NIcb - Normalized Icb NIce - Normalized Ice 100 10 1 .1 .01 .1 1 10 IF - LED Current - mA Normalized to: Ta = 25°C Vce = 5 V IF = 1 mA .01 .01 100 .1 1000 Figure 12. High to low propagation delay versus LED current and load resistor 1000 20 Ta = 25°C Vcb = 9.3 V Icb - Collector-base photocurrent -µa 100 10 1 .1 .1 1 10 100 1000 tpHL - High-Low Propagation Delay - µs Figure 11. Collector-base photocurrent versus LED current .01 10KΩ 15 4.7KΩ Ta = 25°C Vcc = 5 V Vth = 1.5 V 2KΩ 10 5 0 0 5 10 15 IF - LED Current - mA IF - LED Current - mA 20 Figure 14. Normalized non-saturated HFE versus base current and temperature 80 1.2 10KΩ 60 40 4.7KΩ 20 2KΩ Ta = 25°C, Vcc = 5 V, Vth = 1.5 V 0 0 5 10 15 IF - LED Current - mA 70°C 50°C 1.0 25°C Normalized to: Ib = 20µA Vce = 10 V Ta = 25°C -20°C 0.8 0.6 0.4 1 20 Figure 15. Typical switching characteristics versus base resistance (saturated operation) 10 100 Ib - Base Current - µA 1000 Figure 16. Typical switching times versus load resistance 1000 100 Switching time (µs) NHFE - Normalized HFE Figure 13. Low to high propagation delay versus LED current and load resistor Input: IF =10mA 50 Pulse width=100 mS Duty cycle=50% F T OF 10 5 TON Switching time (µS) tpLH - Low-High Propagation Delay - µs 1 10 100 IF - LED Current - mA Input: 500 IF=10 mA Pulse width=100 mS Duty cycle=50% 100 50 10 10K 50K 100K 500K 1M 0.1 0.5 1 5 10 50 100 Load resistance RL (KΩ) Base-emitter resistance, RBE (Ω) Semiconductor Group TON 5 1 1.0 FF TO 4–9