IRFY340 MECHANICAL DATA N–CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Dimensions in mm (inches) 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 BVDSS ID RDS(on) 10.41 10.92 13.39 13.64 16.38 16.89 10.41 10.67 12.70 19.05 1 2 3 400V 8.7A 0.55Ω FEATURES • 0.89 1.14 2.54 BSC D • • • • 2.65 2.75 G HERMETICALLY SEALED TO-220 METAL PACKAGE SIMPLE DRIVE REQUIREMENTS ALL LEADS ISOLATED FROM CASE LIGHTWEIGHT SCREENING OPTIONS AVAILABLE S TO-220M (TO-257AB) Pin 1 – Gate Pin 2 – Drain Pin 3 – Source ABSOLUTE MAXIMUM RATINGS T VDS VGS ID ID IDM PD Tj,Tstg TL Rthj-case NOTES: CASE = 25°C unless otherwise stated Drain - Source Voltage Gate - Source Voltage Drain Current - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) 1 Drain Current - Pulsed Total Power Dissipation at Tcase ≤ 25°C De-rate Linearly above 25°C Operating Junction and Storage Temperature Range Lead Temperature (for 5 sec) Thermal Resistance Junction - Case 400V ±20V 8.7A 5.5A 35A 100W 0.8W/°C -55 to +150°C 300°C 1.25°C/W 1) Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width ≤ 380µS, Duty Cycle, δ 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk DOC 7895, ISSUE 1 IRFY340 STATIC ELECTRICAL RATINGS (T case =25°C unless otherwise stated) Parameter Test Conditions Min. Typ. BVDSS ∆BVDSS ∆TJ Drain – Source Breakdown Voltage VGS = 0V 400 - - Unit V Temperature Coefficient of Reference to 25°C Breakdown Voltage ID = 1.0mA - 0.46 - V/°C IDSS Zero Gate Voltage Drain Current VGS = 0V - - 25 TJ = 125°C - - 250 IGSS VGS(TH) Gate – Source Leakage Current VGS = ±20V VDS = 0V - - ±100 Gate Threshold Voltage VDS = VGS ID = 250µA 2.0 - 4.0 RDS(ON) Drain – Source On State Resistance VGS = 10V ID = 5.5A - - 0.55 VGS = 10V ID = 8.7A - - 0.63 VDS ≥ 15V ID = 5.5A 4.9 - - - 1400 - - 350 - - 230 - - - 65 - - 10 - - 40.5 - - 25 - - 92 - - 79 - - 58 gFS 2 Forward Transconductance VDS=320V ID = 1.0mA Max. µA nA V Ω Ω S DYNAMIC CHARACTERISTICS Ciss Coss Crss Qg Qgs Qgd Td(on) tr Td(off) tf Input Capacitance VDS = 25V f = 1.0MHz Output Capacitance VGS = 0V Reverse Transfer Capacitance 2 Total Gate Charge Gate – Source Charge VDS = 200V VGS = 10V 2 2 Gate – Drain Charge ID = 8.7A Turn-On Delay Rise Time VDD = 200V RG = 9.1Ω Turn-Off Delay Time ID = 8.7A VGS = 10V Fall Time pF nC ns SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD trr Qrr Ton Continuous Source Current (MAX) - - 8.7 Pulsed Source Current (MAX) - - 35 Diode Forward Voltage 2 2 Reverse Recovery Time 2 Reverse Recovery Charge VGS = 0V IS = 8.7A - - 1.5 VGS = 0V di/dt=100A/µs IS = 8.7A VDD ≤ 50V - - 600 - - 5.6 Forward Turn-On Time A V ns µC Negligible Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk DOC 7895, ISSUE 1