IXYS IXFT96N20P

PolarHTTM HiPerFET
Power MOSFET
IXFH 96N20P
IXFT 96N20P
IXFV 96N20P
VDSS
ID25
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25° C to 150° C
200
V
VDGR
TJ = 25° C to 150° C; RGS = 1 MΩ
200
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
TC = 25° C
96
A
ID(RMS)
External lead current limit
75
A
IDM
TC = 25° C, pulse width limited by TJM
225
A
IAR
TC = 25° C
60
A
EAR
TC = 25° C
50
mJ
EAS
TC = 25° C
1.5
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤150° C, RG = 4 Ω
10
V/ns
PD
TC = 25° C
600
W
-55 ... +175
175
-55 ... +150
°C
°C
°C
300
260
°C
°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10s
Md
Mounting torque
Weight
TO-220
TO-247
TO-268
(TO-247)
(TAB)
S
G
G
S
g
g
g
D (TAB)
l
5.0
V
l
±100
nA
25
250
µA
µA
24
mΩ
VGS(th)
VDS = VGS, ID = 4 mA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
S
D (TAB)
D = Drain
TAB = Drain
Features
V
200
D
G = Gate
S = Source
l
VGS = 0 V, ID = 250 µA
© 2006 IXYS All rights reserved
D
TO-268 (IXFT)
Characteristic Values
Min. Typ.
Max.
BVDSS
TJ = 150° C
G
1.13/10 Nm/lb.in.
4
6
5
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
TO-247 (IXFH)
PLUS220 (IXFV)
TJ
TJM
Tstg
TL
TSOLD
= 200 V
= 96 A
≤ 24 mΩ
Ω
≤ 200 ns
l
Fast Intrinsic Diode
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
l
l
l
Easy to mount
Space savings
High power density
DS99222E(02/06)
IXFH 96N20P IXFT 96N20P
IXFV 96N20P
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10 V; ID = 0.5 ID25, pulse test
40
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
52
S
4800
pF
1020
pF
270
pF
Crss
td(on)
28
ns
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
30
ns
td(off)
RG = 4 Ω (External)
75
ns
30
ns
145
nC
30
nC
80
nC
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCS
TO-247 (IXFH) Outline
1
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Source-Drain Diode
° C/W
0.21
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
96
A
ISM
Repetitive
240
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
trr
IF = 25 A
120
200 ns
QRM
-di/dt = 100 A/µs
0.7
µC
IRM
VR = 100 V, VGS = 0 V
7
A
3
Terminals: 1 - Gate 2 - Drain
3 - Source TAB - Drain
0.25° C/W
(TO-247)
2
TO-268 (IXFT) Outline
PLUS220 (IXFV) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXFH 96N20P IXFT 96N20P
IXFV 96N20P
Fig. 1. Output Characte ris tics
@ 25ºC
Fig. 2. Exte nde d Output Characte r is tics
@ 25ºC
250
100
V GS = 10V
9V
90
80
200
9V
175
I D - Amperes
70
I D - Amperes
V GS = 10V
225
60
8V
50
40
7V
30
20
150
125
8V
100
75
7V
50
6V
10
25
0
6V
0
0
0.5
1
1.5
2
2.5
3
0
2
4
6
V D S - V olts
Fig. 3. Output Characte ris tics
@ 150ºC
12
14
16
18
20
3
V GS = 10V
9V
90
2.8
R D S ( o n ) - Normalized
70
8V
60
50
7V
40
30
V GS = 10V
2.6
80
I D - Amperes
10
Fig. 4. RDS(on ) Norm alize d to 0.5 ID25
V alue vs . Junction Te m pe ratur e
100
6V
20
2.4
2.2
2
I D = 96A
1.8
1.6
I D = 48A
1.4
1.2
1
10
0.8
5V
0
0.6
0
1
2
3
4
V D S - V olts
5
6
-50
7
-25
4
50
75
100
125
150
175
90
V GS = 10V
3.7
25
Fig. 6. Drain Curre nt vs . Cas e
Te m pe rature
0.5 ID25 V alue vs . ID
4.3
0
TJ - Degrees Centigrade
Fig. 5. RDS(on) Nor m alize d to
External Lead C urrent Lim it
80
70
3.4
TJ = 175ºC
3.1
2.8
2.5
2.2
TJ = 125ºC
1.9
1.6
I D - Amperes
R D S ( o n ) - Normalized
8
V D S - V olts
60
50
40
30
20
1.3
1
TJ = 25ºC
10
0
0.7
0
25
50
75
100 125 150 175 200 225 250
I D - A mperes
© 2006 IXYS All rights reserved
-50
-25
0
25
50
75
100
125
TC - Degrees Centigrade
150
175
IXFH 96N20P IXFT 96N20P
IXFV 96N20P
Fig. 8. Trans conductance
80
140
70
120
60
- Siemens
160
100
60
TJ = 150ºC
25ºC
-40ºC
40
50
40
fs
80
TJ = -40ºC
25ºC
150ºC
30
g
I D - Amperes
Fig. 7. Input Adm ittance
20
20
10
0
0
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
0
25
50
75
V G S - V olts
Fig. 9. Sour ce Cur re nt vs .
Sour ce -To-Drain V oltage
125
175
200
10
250
9
V DS = 100V
8
I D = 48A
I G = 10m A
7
V G S - Volts
200
150
100
6
5
4
3
TJ = 150ºC
50
2
TJ = 25ºC
1
0
0
0.4
0.6
0.8
1
V S D - V olts
1.2
1.4
1.6
0
15
30
45
Q
60
G
75
90
105 120 135 150
- nanoCoulombs
Fig. 12. Forw ar d-Bias
Safe Ope rating Ar e a
Fig. 11. Capacitance
10000
1000
f = 1MH z
TJ = 175ºC
R DS(on) Lim it
TC = 25ºC
C is s
I D - Amperes
Capacitance - picoFarads
150
Fig. 10. Gate Charge
300
I S - Amperes
100
I D - A mperes
1000
C oss
25µs
100
100µs
1m s
10m s
10
DC
C rss
100
1
0
5
10
15
20
25
V DS - V olts
30
35
40
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
V D S - V olts
1000
IXFH 96N20P IXFT 96N20P
IXFV 96N20P
Fig. 13. M axim um Trans ie nt The rm al Re s is tance
R( t h ) J C - ºC / W
1.00
0.10
0.01
1
10
100
Pulse Width - Milliseconds
© 2006 IXYS All rights reserved
1000