Advance Technical Information IXFK78N50P3 IXFX78N50P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 TO-264 (IXFK) G D S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 500 500 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 78 200 A A IA EAS TC = 25°C TC = 25°C 39 1.5 A J PD TC = 25°C 1130 W dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 35 V/ns -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-264) Mounting Force Weight TO-264 PLUS247 500V 78A Ω 68mΩ 250ns RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode FC = = (PLUS247) 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g Tab PLUS247 (IXFX) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features z z z z z z z Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Diode Low QG Low RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 4mA 3.0 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125°C z z V 5.0 V ± 200 nA Applications z 25 μA 3 mA z 68 mΩ z z z z © 2011 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications DS100313(03/11) IXFK78N50P3 IXFX78N50P3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 40 VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf Qgs S 9.9 nF pF 5.0 pF 1.1 Ω 30 ns 10 ns 60 ns 7 ns 147 nC 50 nC 38 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) 75 970 Crss RGi TO-264 AA Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.11 °C/W RthJC RthCS °C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Characteristic Values Min. Typ. Max. 78 A Repetitive, Pulse Width Limited by TJM 310 A IF = IS , VGS = 0V, Note 1 1.5 V 250 IF = 39A, -di/dt = 100A/μs VR = 100V, VGS = 0V Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 PLUS 247TM Outline μC 13.0 A Terminals: 1 - Gate 2 - Drain 3 - Source Dim. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 ns 1.2 Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain Inches Min. Max. 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK78N50P3 IXFX78N50P3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 80 160 VGS = 10V 7V 70 VGS = 10V 8V 140 60 120 50 100 ID - Amperes ID - Amperes 7V 6V 40 30 80 60 6V 40 20 20 10 5V 5V 0 0 0 1 2 3 4 5 0 6 5 10 20 25 Fig. 4. RDS(on) Normalized to ID = 39A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 80 3.4 VGS = 10V 7V 70 60 6V 50 40 30 20 VGS = 10V 3.0 R DS(on) - Normalized ID - Amperes 15 VDS - Volts VDS - Volts 2.6 I D = 78A 2.2 I D = 39A 1.8 1.4 1.0 5V 10 0.6 4V 0 0.2 0 2 4 6 8 10 12 14 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 39A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 3.2 125 150 125 150 90 VGS = 10V 3.0 80 70 TJ = 125ºC 2.6 2.4 60 ID - Amperes R DS(on) - Normalized 2.8 2.2 2.0 1.8 1.6 50 40 30 1.4 20 1.2 TJ = 25ºC 10 1.0 0.8 0 0 20 40 60 80 100 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 120 140 160 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFK78N50P3 IXFX78N50P3 Fig. 7. Input Admittance Fig. 8. Transconductance 90 140 80 70 TJ = 125ºC 25ºC - 40ºC 100 g f s - Siemens 60 ID - Amperes TJ = - 40ºC 120 50 40 25ºC 80 125ºC 60 30 40 20 20 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 10 20 30 40 VGS - Volts 60 70 80 90 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 240 VDS = 250V 9 I D = 39A 200 8 I G = 10mA 7 VGS - Volts 160 IS - Amperes 50 ID - Amperes 120 80 TJ = 125ºC 6 5 4 3 TJ = 25ºC 40 2 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 20 40 VSD - Volts 60 80 100 120 140 160 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 1000 f = 1 MHz RDS(on) Limit 100µs 100 ID - Amperes Capacitance - PicoFarads Ciss 10,000 1,000 Coss 100 10 TJ = 150ºC Crss 10 TC = 25ºC Single Pulse 1 1ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFK78N50P3 IXFX78N50P3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance AAAAA 0.2 Z(th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_78N50P3(K8)03-15-11