HiPerFASTTM IGBT IXGH 12N60BD1 VDSS ID25 VCE(sat) tfi(typ) = 600 V = 24 A = 2.1 V = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM TC = 25°C, 1 ms 48 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 33 W Clamped inductive load, L = 300 mH ICM = 24 @ 0.8 VCES A PC TC = 25°C 100 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque with screw M3 Mounting torque with screw M3.5 TO-247 AD C (TAB) G C E G = Gate, E = Emitter, C = Collector, TAB = Collector 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 6 g 300 °C Features Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC = 250 mA, VGE = 0 V 600 VGE(th) IC = 250 mA, VGE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC TJ = 25°C TJ = 125°C = ICE90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V 5.0 V 200 1.5 mA mA ±100 nA 2.1 V • Moderate frequency IGBT • New generation HDMOSTM process • International standard package JEDEC TO-247 • High peak current handling capability and antiparallel diode in one package Applications • • • • PFC circuit AC motor speed control DC servo and robot drives Switch-mode and resonant-mode power supplies 98600B (7/00) 1-2 IXGH 12N60BD1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % C ies 11 S 860 pF 100 pF C res 15 pF Qg 32 nC 10 nC 10 nC Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 5 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°C 20 ns t ri IC = IC90, VGE = 15 V, L = 300 mH VCE = 0.8 • VCES, RG = Roff = 18 W 20 ns td(off) tfi Eoff td(on) t ri Eon td(off) Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 300 mH VCE = 0.8 • VCES, RG = Roff = 18 W Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG RthJC IGBT tfi Symbol VF 250 ns A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 120 270 ns 0.5 0.8 mJ C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 20 ns 20 ns 0.5 mJ 200 ns 200 ns L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 0.8 mJ N 1.5 2.49 0.087 0.102 I F = 15A; T VJ = 150°C T VJ = 25°C 1.3 V R = 100 V; I F =25A; -di F /dt = 100 A/ms L < 0.05 mH; T VJ = 100°C t rr IF = 1 A; -di/dt = 50 A/ms; VR = 30 V TJ = 25°C Diode © 2000 IXYS All rights reserved K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IRM RthJC Inches Min. Max. 150 0.25 Test Conditions Dim. Millimeter Min. Max. 1.25 K/W RthCK Reverse Diode (FRED) TO-247 AD (IXGH) Outline 2 35 2.5 V V 2.5 A ns 1.6 K/W IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2