Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM IXSH/IXSM 30N60 30N60A VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 50 A I C90 TC = 90°C 30 A I CM TC = 25°C, 1 ms 100 A SSOA (RBSOA) VGE = 15 V, TJ = 125°C, RG = 4.7 Ω Clamped inductive load, L = 100 µH ICM = 60 @ 0.8 VCES A tSC (SCSOA) VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 Ω, non repetitive 10 µs PC TC = 25°C W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Md Mounting torque 1.13/10 Nm/lb.in. Weight G TO-204 = 18 g, TO-247 = 6 g Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s °C 300 G = Gate, E = Emitter, Symbol Test Conditions BVCES IC = 250 µA, VGE = 0 V 600 VGE(th) IC = 2.5 mA, VCE = VGE 5 ICES VCE = 0.8 VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC © 1998 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 30N60 30N60A V 8 V 100 1 µA mA ±100 nA 2.5 3.0 V V C = Collector, TAB = Collector Features l l l l = IC90, VGE = 15 V E TO-204 AE (IXSM) l TJ = 25°C TJ = 125°C C C 200 TJ TO-247 AD (IXSH) l International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz Applications l l l AC motor speed control Uninterruptible power supplies (UPS) Welding Advantages l l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power density 91549H (9/98) IXSH 30N60 IXSM 30N60 IXSH 30N60A IXSM 30N60A Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % IC(on) VGE = 15 V, VCE = 10 V 7 Cies 13 S 100 A 2760 pF 240 pF Cres 51 pF Qg 110 150 nC 34 45 nC 47 63 nC Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff 60 ns 130 ns 400 ns 30N60 30N60A 400 200 ns ns 30N60 30N60A 5.0 2.5 mJ mJ Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = 4.7 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = 4.7 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 60 ns 130 ns 1.0 mJ 30N60 30N60A 540 1000 340 525 ns ns 30N60 30N60A 600 1500 340 700 ns ns 30N60 30N60A 12 6 RthJC RthCK TO-247 AD Outline 1 = Gate 2 = Collector 3 = Emitter Tab = Collector TO-204AE Outline mJ mJ 0.63 K/W 0.25 K/W IXSH 30N60 and IXSH 30N60A characteristic curves are located on the IXSH 30N60U1 and IXSH 30N60AU1 data sheets. 1 = Gate 2 = Emitter Case = Collector IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025