SEMICONDUCTOR KF3N40D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF3N40D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. A C K DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 2.30 + K _ 0.10 0.50 + L _ 0.10 M 0.50 + 0.70 MIN N L D B FEATURES ・VDSS(Min.)= 400V, ID= 2.2A H J ・Drain-Source ON Resistance : RDS(ON)=3.4 Ω(max) @VGS =10V E N G ・Qg(typ.) =4.4nC F F M MAXIMUM RATING (Tc=25℃) 1 SYMBOL RATING UNIT Drain-Source Voltage VDSS 400 V Gate-Source Voltage VGSS ±30 V Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation TC=25℃ IDP 6* EAS 52 mJ 3 mJ dv/dt 4.5 V/ns 40 W Derate above25℃ Tj Tstg Storage Temperature Range A EAR PD Maximum Junction Temperature 1.4 KF3N40I A DIM 0.32 150 -55～150 W/℃ ℃ ℃ B M P N RthJC 3.1 C D E F G G H F Thermal Resistance, Junction-toAmbient J A Thermal Characteristics Thermal Resistance, Junction-to-Case H C D @TC=100℃ B Drain Current DPAK (1) 2.2 ID K @TC=25℃ 1. GATE 2. DRAIN 3. SOURCE 3 E CHARACTERISTIC 2 L F J K ℃/W L 110 * : Drain current limited by maximum junction temperature. PIN CONNECTION ℃/W 1 2 3 1. GATE 2. DRAIN 3. SOURCE _ 0.2 6.6 + _ 0.2 6.1 + _ 0.3 5.34 + _ 0.2 0.7 + _ 0.3 9.3 + _ 0.2 2.3 + _ 0.1 0.76 + _ 0.1 2.3 + _ 0.1 0.5 + _ 0.2 1.8 + _ 0.1 0.5 + N _ 0.1 1.0 + 0.96 MAX P _ 0.3 1.02 + M RthJA MILLIMETERS IPAK(1) D G S 2010. 8. 23 Revision No : 0 1/6 KF3N40D/I ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 400 - - V ID=250μA, Referenced to 25℃ - 0.4 - V/℃ Static BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V Drain Cut-off Current IDSS VDS=400V, VGS=0V, - - 10 μA Gate Threshold Voltage Vth VDS=VGS, ID=250μA 2.5 - 4.5 V Gate Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA VGS=10V, ID=1.1A - 2.8 3.4 Ω - 4.4 5.8 - 1.0 - - 2.0 - - 10 - - 11 - - 20 - RDS(ON) Drain-Source ON Resistance Dynamic Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay time td(on) tr Turn-on Rise time td(off) Turn-off Delay time VDS=320V, ID=2.2A VGS=10V (Note4,5) VDD=200V, ID=2.2A RG=25Ω (Note4,5) VGS=10V ns Turn-off Fall time tf - 17 - Input Capacitance Ciss - 163 211 Output Capacitance Coss - 26 - Reverse Transfer Capacitance Crss - 2.5 - - - 2 - - 8 VDS=25V, VGS=0V, f=1.0MHz nC pF Source-Drain Diode Ratings Continuous Source Current IS Pulsed Source Current ISP Diode Forward Voltage VSD IS=2.2A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=2.2A, VGS=0V, - 240 - ns Reverse Recovery Charge Qrr dIs/dt=100A/μs - 0.65 - μC VGS<Vth A Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L = 19mH, IS=2.2A, VDD=50V, RG = 25Ω, Starting Tj = 25℃. Note 3) IS ≤2A, dI/dt≤200A/㎲, VDD≤BVDSS, Starting Tj = 25℃. Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%. Note 5) Essentially independent of operating temperature. Marking KF3N40 D 001 2010. 8. 23 1 2 KF3N40 I 001 1 2 1 PRODUCT NAME 2 LOT NO Revision No : 0 2/6 KF3N40D/I 2010. 8. 23 Revision No : 0 3/6 KF3N40D/I 10 1 0.1 0.01 10-4 2010. 8. 23 10-3 Revision No : 0 10-2 10-1 100 1 10 4/6 KF3N40D/I 2010. 8. 23 Revision No : 0 5/6 KF3N40D/I 2010. 8. 23 Revision No : 0 6/6