LESHAN RADIO COMPANY, LTD. Small Signal MOSFET LNTA4001NT1G 20 V, 238 mA, Single, N-Channel, Gate ESD Protection Features •Low Gate Charge for Fast Switching •Small 1.6 x 1.6 mm Footprint •ESD Protected Gate •Pb-Free Package is Available • ESD ESD Protected:2000V Protected:1500V SC-89 Applications •Power Management Load Switch •Level Shift •Portable Applications such as Cell Phones, Media Players, V(BR)DSS Digital Cameras, PDA's, Video Games, Hand Held Computers, etc. RDS(on) Typ @ VGS ID MAX (Note 1) 1.5 W @ 4.5 V 20 V 238 mA 2.2 W @ 2.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Value Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGS ±10 V Parameter Continuous Drain Current (Note 1) Steady State = 25°C ID 238 mA Power Dissipation (Note 1) Steady State = 25°C PD 300 mW PIN CONNECTIONS SC-89 (3-Leads) Gate 1 3 tP v 10 ms IDM 714 mA TJ, TSTG -55 to 150 °C Continuous Source Current (Body Diode) ISD 238 mA (Top View) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C MARKING DIAGRAM Operating Junction and Storage Temperature Source 2 3 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient – Steady State (Note 1) Symbol Max Unit RqJA 416 °C/W 1. Surface-mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces). TF 1 TF M M Pulsed Drain Current Drain 2 = Specific Device Code = Month Code ORDERING INFORMATION Device Package Shipping LNTA4001NT1G SC-89 3000 Tape & Reel LNTA4001NT3G SC-89 10000 Tape & Reel Rev .O 1/5 LESHAN RADIO COMPANY, LTD. LNTA4001NT1G ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit V(BR)DSS VGS = 0 V, ID = 100 mA 20 Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 20 V 1.0 mA Gate-to-Source Leakage Current IGSS VDS = 0 V, VGS = ±10 V ±100 mA V OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) VDS = 3 V, ID = 100 mA 1.0 1.5 Drain-to-Source On Resistance RDS(on) VGS = 4.5 V, ID = 10 mA 1.5 3.0 VGS = 2.5 V, ID = 10 mA 2.2 3.5 VDS = 3 V, ID = 10 mA 50 Forward Transconductance gFS 0.5 W mS CAPACITANCES Input Capacitance CISS 11.5 VDS = 5 V, f = 1 MHz, VGS = 0 V 20 Output Capacitance COSS 10 15 Reverse Transfer Capacitance CRSS 3.5 6.0 td(ON) 13 pF SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 5 V, ID = 10 mA, RG = 10 W tf ns 15 98 ns 60 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 10 mA 0.66 0.8 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. Rev .O 2/5 V LESHAN RADIO COMPANY, LTD. LNTA4001NT1G TYPICAL PERFORMANCE CURVES 0.2 ID, DRAIN CURRENT (A) 0.16 0.2 VDS = 5 V VGS = 2 V ID, DRAIN CURRENT (A) VGS = 10 V VGS = 5 V VGS = 2.8 V 0.18 0.14 0.12 VGS = 2.4 V 0.1 TJ = 25°C 0.08 . 0.06 0.04 VGS = 1.4 V 0.16 0.12 0.08 TJ = 125°C TJ = 25°C 0.04 VGS = 1.2 V 0.02 0 0.6 0 0 0.4 0.8 1.2 1.6 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 2 Figure 1. On-region Characteristics 2.5 TJ = 25°C TJ = 125°C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) VGS = 4.5 V RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 2 Figure 2. Transfer Characteristics 2.5 2 1.5 TJ = 25°C TJ = -55°C 1 0.5 VGS = 2.5 V 2 1.5 VGS = 4.5 V 1 0.5 0 0.05 0.1 0.15 ID, DRAIN CURRENT (A) 0 0.2 Figure 3. On-resistance versus Drain Current and Temperature 0.05 0.1 0.15 ID, DRAIN CURRENT (A) 0.2 Figure 4. On-resistance versus Drain Current and Gate Voltage 2 1000 1.8 ID = 0.01 A 1.6 VGS = 4.5 V VGS = 0 V IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) TJ = -55°C 0.8 1 1.2 1.4 1.6 1.8 VGS, GATE-TO-SOURCE VOLTAGE (V) 1.4 1.2 1 0.8 0.6 TJ = 150°C 100 TJ = 125°C 10 0.4 0.2 0 -50 1 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) Figure 5. On-resistance Variation with Temperature 150 0 5 10 15 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 20 Figure 6. Drain-to-Source Leakage Current versus Voltage Rev .O 3/5 LESHAN RADIO COMPANY, LTD. LNTA4001NT1G TYPICAL PERFORMANCE CURVES 25 1000 TJ = 25°C VDD = 5 V ID = 10 mA VGS = 4.5 V 20 Crss td(off) t, TIME (ns) 100 15 Ciss 10 Coss tf tr td(on) 10 5 Crss VGS = 0 V VDS = 0 V 0 10 5 0 VGS 1 5 10 15 20 1 10 VDS 100 RG, GATE RESISTANCE (W) GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Figure 8. Resistive Switching Time Variation versus Gate Resistance Figure 7. Capacitance Variation 0.1 VGS = 0 V IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) Ciss TJ = 25°C 0.08 0.06 0.04 0.02 0 0.5 0.55 0.6 0.65 0.7 0.75 0.8 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage versus Current Rev .O 4/5 LESHAN RADIO COMPANY, LTD. LNTA4001NT1G SC-89 NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 OBSOLETE, NEW STANDARD 463C-02. Rev .O 5/5