Switching Diodes MA2C188 Silicon epitaxial planar type Unit : mm φ 0.45 max. COLORED BAND INDICATES CATHODE 1 0.2 max. 13 min. For high speed and high voltage switching, small-power rectification ■ Features 2.2 ± 0.3 • Small glass type (DO-34) package, allowing to insert into a 5 mm pitch hole • High voltage (VR: 200 V) rectification is possible Symbol Rating Unit Reverse voltage (DC) VR 200 V Peak reverse voltage VRM 250 V PF(AV) 400 mW IO 200 mA Repetitive peak forward current IFRM 625 mA Non-repetitive peak forward surge current* IFSM 1 A Junction temperature Tj 175 °C Storage temperature Tstg −65 to +175 °C Average power dissipation Output current 13 min. Parameter 0.2 max. ■ Absolute Maximum Ratings Ta = 25°C 2 φ 1.75 max. 1: Cathode 2: Anode JEDEC: DO-34 Note) * : t = l s ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 200 V 200 nA Forward voltage (DC) VF IF = 200 mA 1.2 V Reverse voltage (DC) VR IR = 100 µA Terminal capacitance Ct VR = 0 V, f = 1 MHz Reverse recovery time* trr IF = 10 mA, VR = 1 V Irr = 0.1 · IR, RL = 100 Ω 250 V 1.0 pF 60 ns Note) 1. Rated input/output frequency: 20 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Puls t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 1 V RL = 100 Ω 1 MA2C188 Switching Diodes IF VF IR V R 1 000 1 000 100 100 VF Ta 1.6 Ta = 150°C 100°C 10 25°C − 20°C 1 0.1 10 Forward voltage VF (V) Reverse current IR (µA) Forward current IF (mA) 1.4 Ta = 125°C 100°C 1 25°C 1.2 IF = 200 mA 1.0 0.8 0.6 10 mA 0.4 3 mA 0.1 0.2 0.01 0 0.2 0.4 0.6 0.8 1.0 0.01 1.2 0 Forward voltage VF (V) 50 IR Ta 200 10 1 VR = 250 V 0.1 0.01 −40 200 V 100 V 40 80 120 Ambient temperature Ta 300 160 (°C) 200 f = 1 MHz Ta = 25°C 0.6 0.4 0.2 0 50 100 150 200 250 Reverse voltage VR (V) 0 −40 0 40 80 120 160 Ambient temperature Ta (°C) 0.8 0 0 250 Ct VR 1.0 Terminal capacitance Ct (pF) Reverse current IR (µA) 150 Reverse voltage VR (V) 100 2 100 300 200