SANYO MCH6654

MCH6654
Ordering number : ENA0942
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
MCH6654
General-Purpose Switching Device
Applications
Features
•
•
1.5V drive.
Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
VDSS
VGSS
60
±10
V
V
ID
200
mA
mA
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
800
Allowable Power Dissipation
PD
When mounted on ceramic substrate (900mm2✕0.8mm) 1unit
0.6
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Symbol
V(BR)DSS
IDSS
Conditions
ID=1mA, VGS=0V
Ratings
min
typ
Unit
max
60
V
VDS=60V, VGS=0V
1
μA
±10
μA
IGSS
VGS(off)
VGS=±8V, VDS=0V
VDS=10V, ID=100μA
0.4
Forward Transfer Admittance
⏐yfs⏐
RDS(on)1
VDS=10V, ID=100mA
280
ID=100mA, VGS=4V
2.2
2.9
Ω
Static Drain-to-Source On-State Resistance
RDS(on)2
RDS(on)3
ID=50mA, VGS=2.5V
2.4
3.4
Ω
ID=10mA, VGS=1.5V
3.5
7.0
Cutoff Voltage
1.3
480
V
mS
Ω
Input Capacitance
Ciss
VDS=20V, f=1MHz
26
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
5.9
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
3.2
pF
Marking : XF
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11608PE TI IM TC-00001134 No. A0942-1/4
MCH6654
Continued from preceding page.
Parameter
Symbol
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Ratings
Conditions
min
typ
Unit
max
td(on)
tr
See specified Test Circuit.
18.5
ns
See specified Test Circuit.
26
ns
td(off)
tf
See specified Test Circuit.
146
ns
See specified Test Circuit.
69
ns
1.0
nC
0.2
nC
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
VDS=30V, VGS=4V, ID=200mA
VDS=30V, VGS=4V, ID=200mA
VDS=30V, VGS=4V, ID=200mA
Diode Forward Voltage
VSD
IS=200mA, VGS=0V
Package Dimensions
0.2
0.83
nC
1.2
V
Electrical Connection
unit : mm (typ)
7022A-006
0.25
2.0
6
5
6
5
4
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
1
2
3
Top view
0.15
4
2.1
1.6
0 to 0.02
0.25
1
2
3
0.65
0.07
0.85
0.3
1
2
3
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
6
5
4
SANYO : MCPH6
Switching Time Test Circuit
VDD=30V
VIN
4V
0V
ID=200mA
RL=150Ω
VOUT
VIN
D
PW=10μs
D.C.≤1%
G
P.G
Rg
MCH6654
50Ω
S
Rg=1.2kΩ
No. A0942-2/4
MCH6654
ID -- VDS
80
60
40
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Drain-to-Source Voltage, VDS -- V
0
1.0
8
7
6
50mA
5
100mA
4
3
ID=10mA
1.5
2.0
2.5
IT11275
RDS(on) -- Ta
7
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
9
1.0
Gate-to-Source Voltage, VGS -- V
Ta=25°C
2
0.5
IT11274
RDS(on) -- VGS
10
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
100
50
VGS=1.0V
20
150
°C 25°
C
100
200
Ta
=7
5
120
--25
°C
Drain Current, ID -- mA
250
2.5
V
140
8.0
Drain Current, ID -- mA
160
VDS=10V
2.0
V 6.0V
4.0V
180
ID -- VGS
300
V
1.5
V
200
6
5
V,
=1.5
VGS
4
10
I D=
mA
A
50m
I D=
,
V
=2.5
0mA
VGS
=10
, ID
V
0
.
=4
V GS
3
2
1
1
0
2
4
6
8
⏐yfs⏐ -- ID
3
°C
75
°C
25
°C -5
2
=
Ta
2
10
7
5
3
2
1.0
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
3
td(off)
2
tf
100
7
5
3
tr
td(on)
2
10
0.001
10
7
5
3
2
100
120
140
160
IT11277
1.0
7
5
3
2
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
IT11322
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
3
5
80
5
1000
7
60
100
7
5
3
2
7
VDD=30V
VGS=4V
2
40
Diode Forward Voltage, VSD -- V
SW Time -- ID
3
20
VGS=0V
0.1
0.3
5 7 100
IT11278
Drain Current, ID -- mA
0
IS -- VSD
1000
7
5
3
2
2
3
--20
Ambient Temperature, Ta -- °C
VDS=10V
100
7
5
--40
IT11276
Source Current, IS -- mA
Forward Transfer Admittance, ⏐yfs⏐ -- mS
Gate-to-Source Voltage, VGS -- V
1000
7
5
0
--60
10
Ta=
75
25° °C
C
--25
°C
0
2
10
7
Coss
5
Crss
3
2
1.0
2
3
5 7 0.01
2
3
5 7 0.1
Drain Current, ID -- A
2
3
5 7
IT11279
0
5
10
15
20
25
30
35
40
45
50
Drain-to-Source Voltage, VDS -- V
55
60
IT11280
No. A0942-3/4
MCH6654
VGS -- Qg
3.5
1.0
IDP=0.8A
7
Drain Current, ID -- A
0.3
0.4
0.5
0.6
0.7
0.8
Total Gate Charge, Qg -- nC
0.9
1.0
IT11281
PD -- Ta
0.7
Ta=25°C
Single pulse
When mounted on ceramic substrate
(900mm2✕0.8mm) 1unit
0.01
0.1
2
3
5 7 1.0
2
3
5 7 10
)
°C
25
a=
(T
0.2
Operation in this
area is limited by RDS(on).
5
on
0.1
s
ati
7
2
0
m
0.1
3
0.5
10
ID=0.2A
s
1.0
2
er
op
1.5
3
0m
10
2.0
5
PW≤10μs
10
0μ
s
s
2.5
1m
3.0
0
Allowable Power Dissipation, PD -- W
ASO
2
VDS=30V
ID=200mA
DC
Gate-to-Source Voltage, VGS -- V
4.0
2
3
Drain-to-Source Voltage, VDS -- V
5 7 100
IT12960
When mounted on ceramic substrate
(900mm2✕0.8mm) 1unit
0.6
0.5
0.4
0.3
0.2
0.1
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT12959
Note on usage : Since the MCH6654 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of January, 2008. Specifications and information herein are subject
to change without notice.
PS No. A0942-4/4