Order this document by MDC5000T1/D SEMICONDUCTOR TECHNICAL DATA • Maintains Stable Bias Current in Various Discrete Bipolar Junction and Field Effect Transistors SILICON SMALLBLOCK INTEGRATED CIRCUIT • Provides Stable Bias Using a Single Component Without Use of Emitter Ballast and Bypass Components • Operates Over a Wide Range of Supply Voltages Down to 1.8 Vdc • Reduces Bias Current Variation Due to Temperature and Unit–to–Unit Parametric Changes • Consumes t 0.5 mW at VCC = 2.75 V This device provides a reference voltage and acts as a DC feedback element around an external discrete, NPN BJT or N–Channel FET. It allows the external transistor to have its emitter/source directly grounded and still operate with a stable collector/drain DC current. It is primarily intended to stabilize the bias of discrete RF stages operating from a low voltage regulated supply, but can also be used to stabilize the bias current of any linear stage in order to eliminate emitter/source bypassing and achieve tighter bias regulation over temperature and unit variations. This device is intended to replace a circuit of three to six discrete components and is available in a SOT–143 package. The combination of low supply voltage, low quiescent current drain, and small package make it ideal for portable communications applications such as: • Cellular Telephones CASE 318A–05, Style 9 SOT–143 INTERNAL CIRCUIT DIAGRAM VCC (3) R1 • Pagers Q1 • PCN/PCS Portables R2 • PCMCIA RF Modems • Cordless Phones Q2 Power Supply Voltage Ambient Operating Temperature Range Storage Temperature Range Junction Temperature Collector Emitter Voltage (Q2) Iout (2) R4 MAXIMUM RATINGS Rating Vref (4) R3 • Broadband Transceivers and Other Portable Wireless Products Symbol Value Unit VCC 15 Vdc TA –40 to +85 °C Tstg –65 to +150 °C TJ 150 °C VCEO –15 V Symbol Max Unit PD 225 mW 1.8 mW/°C 556 °C/W GND (1) THERMAL CHARACTERISTICS Characteristic Total Device Power Dissipation (FR–5 PCB of 1″ × 0.75″ × 0.062″, TA = 25°C) Derate above 25°C Thermal Resistance, Junction to Ambient RθJA DEVICE MARKING MDC5000T1 = E5 SMALLBLOCK is a trademark of Motorola, Inc. Small–Signal Transistors, FETs and Diodes Device Data Motorola Motorola, Inc. 1996 1 MDC5000T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Recommended Operating Supply Voltage VCC 1.8 2.75 10 Volts Power Supply Current (VCC = 2.75 V) Vref, Iout are unterminated See Figure 8 ICC — 110 200 µA V(BR)CEO2 –15 Characteristic Q2 Collector Emitter Breakdown Voltage (IC2 = 10 µA, IB2 = 0) Reference Voltage (VCC = 2.75 V, Vout = 0.7 V) (Iout = 30 µA) (Iout = 150 µA) See Figure 9 Vref Volts 2.010 2.075 Reference Voltage (VCC = 2.75 V, Vout = 0.7 V, –40°C ≤ TA ≤ +85°C) VCC Pulse Width = 10 mS, Duty Cycle = 1.0% (Iout = 10 µA) (Iout = 30 µA) (Iout = 100 µA) See Figure 9 2 Volts 2.035 2.100 2.060 2.125 ±5 ±12 ±25 ±10 ±25 ±50 DVref mV Motorola Small–Signal Transistors, FETs and Diodes Device Data MDC5000T1 V CC , SUPPLY VOLTAGE (Vdc) 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8 Iout Iout Iout Iout 9 = 1000 m A = 500 m A = 100 m A = 10 mA 10 TYPICAL OPEN LOOP CHARACTERISTICS (Refer to Circuit of Figure 9) Vref (Vdc) Figure 1. Vref versus VCC @ Iout Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MDC5000T1 TYPICAL OPEN LOOP CHARACTERISTICS (Refer to Circuits of Figures 8, 10 & 11) 50 40 Iout = 500 mA VCC = 2.75 Vdc Iout = 100 mA 30 Iout = 30 mA ∆V ref (mV) 20 10 0 Iout = 10 mA –10 –20 –30 –40 –50 –45 –35 –25 –15 –5 5 15 25 35 45 55 TJ, JUNCTION TEMPERATURE (°C) 65 75 85 Figure 2. DVref versus TJ @ Iout 900 1000 700 TJ = –40°C 600 TJ = +25°C 500 TJ = +85°C 400 300 200 300 200 100 50 30 20 100 0 0 1 2 3 4 5 6 7 VCC, SUPPLY VOLTAGE (Vdc) 8 Figure 3. ICC versus VCC @ TJ 4 TJ = –40°C TJ = +25°C TJ = +85°C 500 H FE , Q2 DC CURRENT GAIN ICC , SUPPLY CURRENT ( mAdc) 800 9 10 10 10 VCE = Vout – Vref = –1.5 Vdc 20 30 50 100 200 300 Iout, DC OUTPUT CURRENT (mAdc) 500 1000 Figure 4. Q2 Current Gain versus Output Current Motorola Small–Signal Transistors, FETs and Diodes Device Data MDC5000T1 TYPICAL CLOSED LOOP PERFORMANCE (Refer to Circuits of Figures 12 & 13) 4.0 1.0 VCC = 2.75 Vdc HFE3 = 113 0.5 IC3 = 15 mA 0 IC3 = 10 mA VCC = 2.75 Vdc TA = 25°C 3.0 2.0 ∆V ref (%) D IC 3 (%) 1.5 –0.5 IC3 = 15 mA IC3 = 10 mA IC3 = 3 mA IC3 = 1 mA 1.0 0 –1.0 IC3 = 3 mA –1.0 –2.0 IC3 = 1 mA –1.5 –45 –35 –25 –15 –5 5 15 25 35 45 55 TA, AMBIENT TEMPERATURE (°C) 65 75 85 Figure 5. DIC3 versus TA @ IC3 –3.0 0 50 100 150 200 250 300 HFE, EXTERNAL TRANSISTOR DC BETA 350 Figure 6. DVref versus External Transistor DC Beta @ IC3 10 VCC = 2.75 Vdc TA = 25°C D I C 3 (%) 5.0 0 IC3 = 15 mA IC3 = 10 mA IC3 = 3 mA IC3 = 1 mA –5.0 –10 –15 0 50 250 300 100 150 200 HFE, EXTERNAL TRANSISTOR DC BETA 350 Figure 7. DIC3 versus External Transistor DC Beta @ IC3 Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 MDC5000T1 OPEN LOOP TEST CIRCUITS ICC VCC (3) VCC (3) + + VCC VCC Q1 Q1 MDC5000T1 MDC5000T1 Vref (4) Vref (4) Iref Q2 Q2 Iout (2) Vref Iout (2) Iout Iout GND (1) GND (1) V A + VBE3 = 0.7 V NOTE: VBE3 is used to simulate actual operating conditions that reduce VCE2 & HFE2, and increase IB2 & Vref. Figure 8. ICC versus VCC Test Circuit Figure 9. Vref versus VCC Test Circuit VCC (3) VCC (3) + VCC = 2.75 V Q1 Q1 MDC5000T1 MDC5000T1 Vref (4) Vref (4) Iref Q2 GND (1) Iout (2) Q2 Vref Iout Iout A + VBE3 = 0.7 V V Iout (2) GND (1) Iout Iout A IB 1.5 V + NOTE: VBE3 is used to simulate actual operating conditions that reduce VCE2 & HFE2, and increase IB2 & Vref. Figure 10. Vref versus TJ Test Circuit 6 Figure 11. HFE versus Iout Test Circuit Motorola Small–Signal Transistors, FETs and Diodes Device Data MDC5000T1 CLOSED LOOP TEST CIRCUITS A VCC (3) + IC3 VCC = 2.75 V Q1 MDC5000T1 Q2 Vref (4) Iout (2) A VBE3 Q3 V Iout Vref GND (1) Figure 12. RF Stage IC3 versus HFE3 Test Circuit A VCC (3) + IC3 VCC = 2.75 V Q1 GND (1) MDC5000T1 Vref (4) Q2 Iout (2) 1K VBE3 51 0.1 mF 100 pF 0.018 mF Q3 MRF941 HFE = 113 51 100 pF 0.018 mF NOTE: External R–Cs used to Maintain Broadband Stability of MRF9411 Figure 13. RF Stage IC3 versus TA Test Circuit Motorola Small–Signal Transistors, FETs and Diodes Device Data 7 MDC5000T1 REGULATED VCC = 2.75 Vdc VCC (3) IC3 = 3 mAdc R1 R5 240 W Q1 Vref = 2.035 Vdc R2 MDC5000T1 R3 Q2 470 pF Vref (4) 18 nH Iout (2) R4 30 nH 180 1K Iout 8.0 nH 470 pF GND (1) RF OUT Q3 MRF9411 Typ RF IN 9 pF 4–STEP DESIGN PROCEDURE Step 1: Step 2: Step 3: Step 4: Choose VCC (1.8 V Min to 10 V Max) Choose bias current, IC3, and calculate needed Iout from typ HFE3 From Figure 1, read Vref for VCC & Iout calculated. Calculate Nominal R5 = (VCC – Vref) ÷ (IC3 + Iout). Tweak as desired. Figure 14. Class A Biasing of a Typical 900 MHz BJT Amplifier REGULATED VCC = 2.75 Vdc ID = 15 mAdc VCC (3) R5 43 W R1 RFC Q1 Vref = 2.100 Vdc R2 MDC5000T1 R3 Q2 R4 1000 pF 6.8 nH Vref (4) Iout (2) Iout GND (1) 2.7 pF D 1K 12.5 nH 1000 pF R6 22 K RF IN 6.1 pF + S RF OUT Q3 MRF9811 Typ EGS 5 Vdc 6–STEP DESIGN PROCEDURE Step 1: Choose VCC (1.8 V Min to 10 V Max) Step 2: Choose bias current, ID, and determine needed gate–source voltage, VGS. Step 3: Choose Iout keeping in mind that too large an Iout can impair MDC5000T1 DVref/DTJ performance (Figure 2) but too large an R6 can cause IDGO & IGSO to bias on the FET. Step 4: Calculate R6 = (VGS + EGS) ÷ Iout Step 5: From Figure 1, read Vref for VCC & Iout chosen Step 6: Calculate Nominal R5 = (VCC – Vref) ÷ (ID + Iout). Tweak as desired. Figure 15. Class A Biasing of a Typical 890 MHz Depletion Mode GaAs FET Amplifier 8 Motorola Small–Signal Transistors, FETs and Diodes Device Data MDC5000T1 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. A L G 3 4 S B 1 F H 2 D DIM A B C D F G H J K L R S MILLIMETERS INCHES MIN MAX MIN MAX 2.80 3.04 0.110 0.120 1.20 1.39 0.047 0.055 0.84 1.14 0.033 0.045 0.39 0.50 0.015 0.020 0.79 0.93 0.031 0.037 1.78 2.03 0.070 0.080 0.013 0.10 0.0005 0.004 0.08 0.15 0.003 0.006 0.46 0.60 0.018 0.024 0.445 0.60 0.0175 0.024 0.72 0.83 0.028 0.033 2.11 2.48 0.083 0.098 J C R K 0.112 2.85 0.079 2 0.033 0.85 0.075 1.9 0.033 0.85 0.047 1.2 STYLE 9: PIN 1. 2. 3. 4. GND IOUT VCC VREF 0.108 2.75 0.041 1.05 0.071 1.8 0.031 0.8 0.033 0.85 inches mm SOT–143 FOOTPRINT CASE 318A–05 ISSUE M Motorola Small–Signal Transistors, FETs and Diodes Device Data 9 MDC5000T1 Motorola reserves the right to make changes without further notice to any products herein. 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