MITSUBISHI SEMICONDUCTOR<GaAsMMIC> MGF7168C Technical Note UHF BAND GaAs POWER AMPLIFIER Specifications are subject to change without notice. DESCRIPTION PIN CONFIGURATION (TOP VIEW) MGF7168C is a monolithic microwave integrated circuit for use in UHF-band power amplifier. Pi FEATURES - Low voltage operation Vd=3.2V - High output power Po=33dBm (typ.) @1710~1785MHz Po=33dBm (typ.) @1850~1910MHz - High efficiency Id=1250mA (typ. ) @Po=33dBm - Small size 6.1x7.0x1.10mm - Surface mount package - 2 Stage Amplifier - External matching circuit is required Vg1 Vd1 GND GND R Vd2 / Po Vg2 Pin : RF input (Note1) Pout : RF output (Note1) Vd1 : Drain bias 1 Vd2 : Drain bias 2 Vg1 : Gate bias 1 Vg2 : Gate bias 2 GND : Connect to GND CASE : Connect to GND : Connect to GND through R the resistor APPLICATION - 1.8GHz band handheld phone - 1.9GHz band handheld phone QUALITY GRADE Note1: Connect to matching circuits. - GG *Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. MITSUBISHI ELECTRIC (1/12) Mar.'97 MITSUBISHI SEMICONDUCTOR<GaAsMMIC> MGF7168C UHF BAND GaAs POWER AMPLIFIER ABSOLUTE MAXIMUM RATINGS Symbol Parameter Ratings Unit Vd1,Vd2 Drain voltage 6 V Vg1,Vg2 Gate voltage -4 V Pi Input power 15 dBm Tc(op) Operating case temperature -30~+85 ˚C Tstg Storage temparature -30~+100 ˚C ELECTRICAL CHARACTERISTICS (Ta=25˚C) Symbol f Parameter Test conditions Note1,2 frequency Input power Idt Total drain current Ig Gate current 2sp 2nd harmonics ρin input VSWR — Limits TYP MAX Unit 1710 — 1785 1850 — 1910 — — 10 dBm — 1250 — mA — — 3 mA — — -30 dBc — — 3 — MHz Pin — MIN Vd1=Vd2=3.2V,Po=33dBm Vd1=Vd2=3.2V, Pin<10dBm, Po=33dBm Note3 Vd1=Vd2=3.2V, Pin<10dBm, Load VSWR=10, All phase Time=10 sec Note3 Vd1=Vd2=3.2V, Pin<10dBm, Load VSWR=3:1, All phase Damage with-standing Stability No damage No oscillation Spurious level<-60dBc Note1 : Electrical characteristics are changed by the external matching circuit. Limits are guaranteed by using MITSUBISHI test fixture. Note2 : GMSK Pulse operation Note3 : Sampling inspection MITSUBISHI ELECTRIC (2/12) Mar.'97 MITSUBISHI SEMICONDUCTOR<GaAsMMIC> MGF7168C UHF BAND GaAs POWER AMPLIFIER VG1 VG2 Pout Pin FET1 Matching circuits FET2 VD1 VD2 Equivalent circuit of MGF7168C with our test board : MGF7168C(Ceramic package) : our test board(εr=4.8, t=0.6mm) MITSUBISHI ELECTRIC (3/12) Mar.'97 MITSUBISHI SEMICONDUCTOR<GaAsMMIC> MGF7168C UHF BAND GaAs POWER AMPLIFIER Input/Output Impedance ZI=4.5-j27.8 (Ω) : 1.88GHz ZL(ηmax) = 3.3-j4.7 (Ω) : f=1.88GHz ZL(Po max)= 2.4-j5.8 (Ω) : f=1.88GHz ηmax 1150mA(Po>32.8dBm) Pomax (33.8dBm) Conditions; Vd1=Vd2=3.2V Vgg=-2.0V Pin=10dBm MITSUBISHI ELECTRIC (4/12) Mar.'97 MITSUBISHI SEMICONDUCTOR<GaAsMMIC> MGF7168C UHF BAND GaAs POWER AMPLIFIER Equivalent Circuit of Test Board for PCS(DCS1900) l=14.0 w=1.0 l=6.7 w=1.0 1.5pF l=2.0 w=1.0 MGF 7168C Pin 2.5pF Vd2 1000pF l=28.6 w=0.5 l=2.7 w=2.2 Pout 8pF 3pF l=11.7 w=3.5 Unit:mm SUB. data ER=4.8 H=600µm Metal T=43µm MITSUBISHI ELECTRIC (5/12) Mar.'97 MITSUBISHI SEMICONDUCTOR<GaAsMMIC> MGF7168C UHF BAND GaAs POWER AMPLIFIER 1500 70 30 1300 60 25 1100 50 20 900 40 700 30 500 20 15 10 5 0 -5 300 Pout Idt 10 Pout Efficiency 100 0 5 10 15 0 -5 0 Pin (dBm) 5 10 15 Pin (dBm) Fin=1880MHz Vd1=Vd2=3.2V Id1=150mA,Id2=550mA CW evaluation MITSUBISHI ELECTRIC (6/12) Mar.'97 Efficiency (%) 35 Idt (mA) Pout (dBm) Pin vs. Pout, Idt, ηt for PCS1900 MITSUBISHI SEMICONDUCTOR<GaAsMMIC> MGF7168C UHF BAND GaAs POWER AMPLIFIER Input/Output Impedance (DCS1800) ZI= 6.0-j22.4 (Ω) : 1.75GHz 0.2 0.1 ZL(ηmax) = 3.3-j2.6 (Ω) : 1.75GHz ZL(Po max)= 2.2-j3.5 (Ω) : 1.75GHz ηmax 1250mA(Po>33dBm) Pomax (33.7dBm) Conditions; Vd1=Vd2=3.2V Vgg=-2.0V Pin=10dBm MITSUBISHI ELECTRIC (7/12) Mar.'97 MITSUBISHI SEMICONDUCTOR<GaAsMMIC> MGF7168C UHF BAND GaAs POWER AMPLIFIER Equivalent Circuit of Test Board for PCN(DCS1800) <Exsample 1> l=14.0 w=1.0 l=6.7 w=1.0 2pF l=2.0 w=1.0 MGF 7168C Pin 3.5pF Vd2 1000pF l=28.6 w=0.5 l=2.7 w=2.2 Pout 15pF 3.5pF l=11.7 w=3.5 Unit:mm SUB. data ER=4.8 H=600µm Metal T=43µm MITSUBISHI ELECTRIC (8/12) Mar.'97 MITSUBISHI SEMICONDUCTOR<GaAsMMIC> MGF7168C UHF BAND GaAs POWER AMPLIFIER Equivalent Circuit of Test Board for PCN (DCS1800) <Exsample 2> l=2.0 w=1.0 l=2.0 w=1.0 2 pF MGF 7168C Pin 3.5 pF Vd2 1000pF l=26 w=0.5 Pout 10 pF l=2.7 w=2.2 l=2.7 w=3.5 3.0 pF l=9.0 w=3.5 0.5 pF Unit:mm SUB. data ER=4.8 H=600µm Metal T=43µm MITSUBISHI ELECTRIC (9/12) Aug.'97 MITSUBISHI SEMICONDUCTOR<GaAsMMIC> MGF7168C Preliminary information UHF BAND GaAs POWER AMPLIFIER 1500 70 30 1300 60 25 1100 50 20 900 40 700 30 10 500 20 5 300 15 10 Pout Pout Idt Efficiency 0 100 -5 0 5 10 15 0 -5 0 Pin (dBm) 5 10 15 Pin (dBm) Fin=1750MHz Vd1=Vd2=3.2V Id1=150mA,Id2=550mA CW evaluation MITSUBISHI ELECTRIC (10/12) Nov. '96 Efficiency (%) 35 Idt (mA) Pout (dBm) Pin vs. Pout, Idt, ηt for PCN/DCS1800 MITSUBISHI SEMICONDUCTOR<GaAsMMIC> MGF7168C UHF BAND GaAs POWER AMPLIFIER Recommended Mount Pad 0.45 0.9 2.16 1.4 2.14 1.2 1.27 x 4=5.08 7.40 1.0 2.50 4.10 0.8 4.90 0.8 Unit:mm MITSUBISHI ELECTRIC (11/12) Mar.'97 MITSUBISHI SEMICONDUCTOR<GaAsMMIC> Preliminary information MGF7168C UHF BAND GaAs POWER AMPLIFIER OUTLINE DRAWING Unit : mm 6.1+/-0.2 Note1 0.3 5.2 1 8 3 6.2 7.0+/-0.2 2 7 4 6 5 1.1+/-0.2 4 - R0.2 0.3 2 - (2.4) 8 - (0.5) 8 - (0.4) 2 - (0.1) 2 - 2.06 4.1 8 - (4.9) 1 2 INPUT Vg 3 2 - (0.1) 6 - 0.8+/-0.1 4.28 (1.2) P1.27 x 4 = 5.08+/-0.1 Terminal Connection Vd1 4 MC 5 Vg 6 OUTPUT/Vd2 7 GND 8 GND Case:GND Note1 : 1 pin mark Note2 : The values without tolerance are typical. MITSUBISHI ELECTRIC (12/12) Mar.'97