< L/S band internally matched power GaAs FET > MGFL48V1920 1.9 – 2.0 GHz BAND / 60W DESCRIPTION The MGFL48V1920 is a 60W push-pull type GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Push-pull configuration High output power Pout=60W (TYP.) @f=1.9 - 2.0GHz High power gain GLP=11.5dB (TYP.) @f=1.9 - 2.0GHz High power added efficiency P.A.E.=45% (TYP.) @f=1.9 - 2.0GHz APPLICATION item 01 : 1.9 - 2.0 GHz band power amplifier QUALITY IG RECOMMENDED BIAS CONDITIONS VDS=12V ID=4.0A RG=20ohm for each gate Keep Safety first in your circuit designs! Absolute maximum ratings Symbol (Ta=25C) Ratings Unit Gate to drain breakdown voltage -20 V VGSO Gate to source breakdown voltage -10 V PT *1 Total power dissipation 10 W VGDO Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Parameter Tch Cannel temperature 175 C Tstg Storage temperature -65 to +175 C *1 : Tc=25C Electrical characteristics Symbol (Ta=25C) Parameter Test conditions Limits Min. Unit Typ. Max. Gate to source cut-off voltage VDS=3V,ID=17.3mA -1 - -4 V Output power at 2dB gain compression VDS=12V,ID(RF off)=4.0A 47 48 - dBm GLP Linear Power Gain f=1.9 - 2.0GHz 10 11.5 - dB ID Drain current - 11 15 A P.A.E. Power added efficiency - 45 - % Rth(ch-c) *2 Thermal resistance - 1.0 1.4 C/W VGS(off) P2dB delta Vf method *2 :Channel-case Publication Date : Apr., 2011 1 < L/S band internally matched power GaAs FET > MGFL48V1920 1.9 – 2.0 GHz BAND / 60W MGFL45V1920 TYPICAL CHARACTERISTICS Pout , PAE vs. Pin Test Condition : Idq=4A,Ta=25deg.C IMD vs. Pout Test Condition : Vds=12V,Idq=4A,Ta=25deg.C 2-tone test , Δf=5MHz Publication Date : Apr., 2011 2 < L/S band internally matched power GaAs FET > MGFL48V1920 1.9 – 2.0 GHz BAND / 60W MGFL45V1920 RF TEST FIXTURE Publication Date : Apr., 2011 3 < L/S band internally matched power GaAs FET > MGFL48V1920 1.9 – 2.0 GHz BAND / 60W MGFL48V1920 S-parameters( Ta=25deg.C , VDS=12(V),IDS=1.5(A) ) Publication Date : Apr., 2011 4 < L/S band internally matched power GaAs FET > MGFL48V1920 1.9 – 2.0 GHz BAND / 60W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. •Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. © 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publication Date : Apr., 2011 5