MJD42C MJD42C General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP42C D-PAK 1 1.Base I-PAK 1 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Value -100 Collector-Base Voltage Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -100 V -5 V IC Collector Current (DC) ICP Collector Current (Pulse) IB Base Current -2 A PC Collector Dissipation (TC=25°C) 20 W -6 A -10 A Collector Dissipation (Ta=25°C) 1.75 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage Test Condition IC = - 30mA, IB = 0 ICEO Collector Cut-off Current VCE = -60V, IB = 0 -50 µA ICES Collector Cut-off Current VCE = -100V, VBE = 0 -10 µA -0.5 mA IEBO Emitter Cut-off Current VBE = -5V, IC = 0 hFE * DC Current Gain VCE = -4V, IC = -0.3A VCE = -4V, IC = -3A VCE(sat) * Collector-Emitter Saturation Voltage IC = -6A, IB = -600mA VBE(on) * Base-Emitter ON Voltage VCE = -6A, IC = -4A fT Current Gain Bandwidth Product VCE = -10V, IC = -500mA Min. -100 30 15 3 Max. Units V 75 -1.5 V -2 V MHz * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD42C VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 1000 hFE, DC CURRENT GAIN VCE = -2V 100 10 1 -0.01 -0.1 -1 -10 -10 IC = 10 IB -1 V BE(sat) -0.1 VCE(sat) -0.01 -0.01 -0.1 -1 -10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 tR, tD [µs], TURN ON TIME Cob[pF], CAPACITANCE 1000 100 10 V CC = -30V IC = 10.IB 1 tR 0.1 tD VBE(off)=-5V 0.01 -0.01 1 -0.1 -1 -10 -0.1 -10 IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Collector Capacitance Figure 4. Turn On Time 10 -100 V CC = -30V IC = 10.IB tSTG 1 tF 0.1 0.01 -0.01 IC[A], COLLECTOR CURRENT tSTG,tF [µ s], TURN OFF TIME -1 -100 -0.1 -1 IC[A], COLLECTOR CURRENT Figure 5. Turn Off Time ©2001 Fairchild Semiconductor Corporation -10 ICP(max) -10 10 1m IC(max) 5m -1 50 s 0µ 0µ s s s DC -0.1 -0.01 -1 -10 -100 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. A2, June 2001 MJD42C Typical Characteristics (Continued) PC[W], POWER DISSIPATION 25 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD42C Package Demensions D-PAK 0.50 ±0.10 MIN0.55 0.91 ±0.10 0.76 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30TYP [2.30±0.20] (2XR0.25) (1.00) (3.05) 6.10 ±0.20 2.70 ±0.20 9.50 ±0.30 6.60 ±0.20 (5.34) (5.04) (1.50) (0.70) 2.30 ±0.20 (0.90) 6.10 ±0.20 2.30 ±0.10 (0.10) 2.30TYP [2.30±0.20] (0.50) 0.89 ±0.10 MAX0.96 (4.34) 2.70 ±0.20 0.80 ±0.20 0.60 ±0.20 (0.50) 9.50 ±0.30 5.34 ±0.30 0.70 ±0.20 6.60 ±0.20 0.76 ±0.10 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3