SEMTECH_ELEC MMBTSC3356W

MMBTSC3356W
NPN Silicon Epitaxial Planar Transistor
for microwave low noise amplifier at VHF, UHF and
CATV band.
The transistor is subdivided into three groups, Q, R
and S, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
20
V
Collector Emitter Voltage
VCEO
12
V
Emitter Base Voltage
VEBO
3
V
Collector Current
IC
100
mA
Power Dissipation
Ptot
200
mW
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
- 65 to + 150
O
C
C
Characteristics at Tamb = 25 OC
Parameter
DC Current Gain
at VCE = 10 V, IC = 20 mA Current Gain Group
Collector Cutoff Current
at VCB = 10 V
Emitter Cutoff Current
at VEB = 1 V
Gain Bandwidth Product
at VCE = 10 V, IC = 20 mA
Feed-Back Capacitance
at VCB = 10 V, f = 1 MHz
Insertion Power Gain
at VCE = 10 V, IC = 20 mA, f = 1 GHz
Noise Figure
at VCE = 10 V, IC = 7 mA, f = 1 GHz
1)
Q
R
S
Symbol
Min.
Typ.
Max.
Unit
hFE
hFE
hFE
50
80
125
-
100
160
250
-
ICBO
-
-
1
µA
IEBO
-
-
1
µA
fT
-
7
-
GHz
-
0.55
1
pF
-
11.5
-
dB
-
1.1
2
dB
1)
Cre
│S21e│
2
NF
The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 20/05/2006
MMBTSC3356W
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 20/05/2006