Order this document by MPSW13/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 BASE 2 EMITTER 1 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCES 30 Vdc Collector – Base Voltage VCBO 30 Vdc Emitter – Base Voltage VEBO 10 Vdc Collector Current — Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 8.0 Watts mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 20 Watts mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 125 °C/W Thermal Resistance, Junction to Case RqJC 50 °C/W Operating and Storage Junction Temperature Range 2 3 CASE 29–05, STYLE 1 TO–92 (TO–226AE) THERMAL CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit V(BR)CES 30 — Vdc Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO — 100 nAdc Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) IEBO — 100 nAdc Characteristic OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 100 µAdc, VBE = 0) REV 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max MPSW13 MPSW14 5,000 10,000 — — MPSW13 MPSW14 10,000 20,000 — — Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) hFE (IC = 100 mAdc, VCE = 5.0 Vdc) — Collector–Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) VCE(sat) — 1.5 Vdc Base–Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) VBE(on) — 2.0 Vdc fT 125 — MHz SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product(2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 2. fT = |hfe| • ftest. v 300 ms, Duty Cycle v 2.0%. CURRENT LIMIT DUTY CYCLE ≤ 10% THERMAL LIMIT SECOND BREAKDOWN LIMIT I C , COLLECTOR CURRENT (mA) 3.0 k 2.0 k 100 ms 1.0 ms 1.0 k 1.0 s 500 TA = 25°C 200 1.5 TC = 25°C 2.0 5.0 20 10 30 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 1. Active Region — Safe Operating Area VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) 200 k h FE , DC CURRENT GAIN TJ = 125°C 100 k 70 k 50 k 25°C 30 k 20 k 10 k 7.0 k 5.0 k –55°C 3.0 k 2.0 k 5.0 7.0 10 VCE = 5.0 V 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 2. DC Current Gain 2 200 300 500 3.0 TJ = 25°C IC = 10 mA 2.5 IC = 50 mA IC = 500 mA IC = 250 mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 IB, BASE CURRENT (mA) Figure 3. Collector Saturation Region Motorola Small–Signal Transistors, FETs and Diodes Device Data q V , TEMPERATURE COEFFICIENTS (mV/ °C) 1.6 TJ = 25°C V, VOLTAGE (VOLTS) 1.4 VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 0.8 0.6 VCE(sat) @ IC/IB = 1000 5.0 7.0 10 20 50 30 200 300 70 100 –1.0 –2.0 *APPLIES FOR IC/IB ≤ hFE/3.0 –55°C TO 25°C –3.0 25°C TO 125°C –4.0 qVB FOR VBE –5.0 –55°C TO 25°C –6.0 500 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 200 300 500 20 VCE = 5.0 V TJ = 25°C f = 100 MHz TJ = 25°C C, CAPACITANCE (pF) h FE , SMALL–SIGNAL CURRENT GAIN 70 100 Figure 5. Temperature Coefficients 4.0 1.0 0.8 0.6 0.4 0.2 0.5 50 30 IC, COLLECTOR CURRENT (mA) Figure 4. “ON” Voltages 2.0 25°C TO 125°C *qVC FOR VCE(sat) 10 7.0 Cibo 5.0 Cobo 3.0 2.0 1.0 2.0 5.0 10 20 50 100 200 500 0.04 0.1 0.2 0.4 1.0 2.0 4.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 6. High Frequency Current Gain Figure 7. Capacitance Motorola Small–Signal Transistors, FETs and Diodes Device Data 10 20 40 3 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R SEATING PLANE P L F K X X DIM A B C D F G H J K L N P R V D G H J V 1 2 3 N C SECTION X–X N CASE 029–05 (TO–226AE) ISSUE AD INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.135 ––– 0.135 ––– MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.56 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 3.43 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. 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