Order this document by MRF6408/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for PCN and PCS base station applications, the MRF6408 incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. 12 W, 2.0 GHz RF POWER TRANSISTOR NPN SILICON • To be used in class AB for PCN–PCS / Cellular Radio • Specified 26 Volts, 1.88 GHz Characteristics Output Power = 12 Watts CW Typical Gain = 8.8 dB Typical Efficiency = 42% • Specified 26 Volts, 1.99 GHz Characteristics Output Power = 12 Watts CW Typical Gain = 8.3 dB Typical Efficiency = 39% • Circuit Board Photomaster Available by Ordering Document MRF6408PHT/D from Motorola Literature Distribution. CASE 395C–01, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit VCEO 24 Vdc Collector–Emitter Voltage VCES 60 Vdc Emitter–Base Voltage VEBO 4 Vdc Collector–Current — Continuous IC 5 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 60 0.35 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C TJ 200 °C Symbol Max Unit RθJC 2.8 °C/W Collector–Emitter Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) V(BR)CEO 24 30 — Vdc Emitter–Base Breakdown Voltage (IB = 5.0 mAdc, IC = 0) V(BR)EBO 4 5 — Vdc Collector–Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) V(BR)CES 55 64 — Vdc ICES — — 6 mA Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCE = 30 Vdc, VBE = 0) (1) Thermal resistance is determined under specified RF operating condition. REV 2 RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF6408 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit hFE 20 35 80 — Cob — 18 — pF Common–Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 12 W (CW), ICQ = 100 mA, f = 1.88 GHz) Gpe 7.8 8.8 — dB Common–Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 12 W (CW), ICQ = 100 mA, f = 1.99 GHz) Gpe 7.5 8.3 — dB Collector Efficiency (VCC = 26 Vdc, Pout = 12 W (CW), ICQ = 100 mA, f = 1.88 GHz) η 37 42 — % Collector Efficiency (VCC = 26 Vdc, Pout = 12 W (CW), ICQ = 100 mA, f = 1.99 GHz) η 34 39 — % Output Power at 1 dB Compression Point (VCC = 26 Vdc, ICQ = 100 mA, f = 1.88 GHz) P @ 1 dB 15 — — W Output Power at 1 dB Compression Point (VCC = 26 Vdc, ICQ = 100 mA, f = 1.99 GHz) P @ 1 dB 14 — — W Intermodulation Distortion (VCC = 26 Vdc, Pout = 12 W (PEP), ICQ = 100 mA, f1 = 1880 MHz, f2 = 1880.1 MHz) IMD — – 35 – 30 dBc Intermodulation Distortion (VCC = 26 Vdc, Pout = 12 W (PEP), ICQ = 100 mA, f1 = 1990 MHz, f2 = 1990.1 MHz) IMD — – 35 – 30 dBc ON CHARACTERISTICS DC Current Gain (ICE = 1 Adc, VCE = 5 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (2) (VCB = 26 Vdc, IE = 0, f = 1 MHz) FUNCTIONAL TESTS Load Mismatch (VCC = 26 Vdc, Pout = 12 W (CW), ICQ = 100 mA, f = 1.99 GHz, Load VSWR = 3:1, All Phase Angles at Frequency of Test) ψ No Degradation in Output Power (2) For information only. This part is collector matched. MRF6408 2 MOTOROLA RF DEVICE DATA VCC T2 C11 C7 VBB R2 R3 R4 C10 T1 L1 P1 C12 C9 ÌÌÌÌÌÌ ÌÌÌÌÌÌ R1 C8 C5 C13 C4 Z4, Θ4 Z11, Θ11 BASE BIAS CIRCUIT C2 Z2,Θ2 C1 Z1,Θ1 Z5,Θ5 Z6,Θ6 Z7,Θ7 Z8,Θ8 Z10,Θ10 Z12,Θ12 TRF1 ΘB RF INPUT CT2 CT1 C4 C5, C9 C7 C10, C12, C13 C11 L1 CT3 RF CIRCUIT 47 pF, Chip Capacitor, ATC100A 330 pF, 0805 Chip Capacitor, Vitramon JXB 4.7 µF 63 V, Electrolytic Capacitor 15 nF, 0805 Chip Capacitor, Vitramon JXB 100 µF 16 V, Electrolytic Capacitor SMD Ferrite Bead, Fair–Rite 2743021447 P1 R1 R2 R3 R4 T1, T2 RF OUTPUT 1 kΩ, Trimmer Resistor 1 Ω, 1206 Chip Resistor 56 Ω, 1206 Chip Resistor 47 Ω, 0805 Chip Resistor 330 Ω, 0805 Chip Resistor MJD31C, NPN Transistor, Motorola Test Circuits Bias and Decoupling Components List C1, C2 CT1 CT2 CT3 Z1 Z2 Z4 Z5 Z6 Z7 Z8 Z10 Z11 Z12 33 pF, Chip Capacitor, ATC100A Trimmer Capacitor, Gigatrim 37281 Trimmer Capacitor, Gigatrim 37281 Trimmer Capacitor, Gigatrim 37281 50 Ω Θ1 = 10° 50 Ω Θ2 = 74.5° ΘB = 16.5° 74 Ω Θ4 = 68° 12.8 Ω Θ5 = 21° 10.4 Ω Θ6 = 49.5° 18 Ω Θ7 = 36.5° 45 Ω Θ8 = 20° 50 Ω Θ10 = 10° 74 Ω Θ11 = 74.5° 50 Ω Θ12 = 10° C1, C2 CT1 CT2 CT3 Z1 Z2 Z4 Z5 Z6 Z7 Z8 Z10 Z11 Z12 33 pF, Chip Capacitor, ATC100A Trimmer Capacitor, Gigatrim 37281 Trimmer Capacitor, Gigatrim 37281 Not Used 50 Ω Θ1 = 10° 50 Ω Θ2 = 74.5° ΘB = 16.5° 74 Ω Θ4 = 68° 12.8 Ω Θ5 = 21° 10.4 Ω Θ6 = 49.5° 18 Ω Θ7 = 36.5° 45 Ω Θ8 = 20° 50 Ω Θ10 = 10° 74 Ω Θ11 = 60° 50 Ω Θ12 = 10° Electrical Lengths are referenced from IG @ f = 1.9 GHz 1.88 GHz Test Circuit RF Components List 1.99 GHz Test Circuit RF Components List Figure 1. Test Circuits Schematic MOTOROLA RF DEVICE DATA MRF6408 3 TYPICAL CHARACTERISTICS ÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌ ÌÌÌÌÌÌÌ ÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌ ÌÌÌÌÌÌÌ 21 18 f = 1.88 GHz Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 21 15 f = 1.99 GHz 12 9 6 VCC = 26 V ICQ = 100 mA 3 0 0.5 1 1.5 2 2.5 Pin, INPUT POWER (WATTS) 3 15 Pin = 1.5 W 12 9 VCC = 26 V ICQ = 100 mA 6 ÌÌÌÌÌÌÌÌÌÌÌÌÌÌÌ Pin = 0.5 W 3 0 1.8 3.5 Figure 2. Output Power versus Input Power (CW) – 10 1.9 f, FREQUENCY (GHz) 1.95 2 – 10 – 15 VCC = 26 V ICQ = 100 mA f1 = 1880 MHz f2 = 1880.1 MHz – 20 – 25 3rd Order – 30 – 35 – 40 5th – 45 – 50 7th – 55 – 60 0 10 20 Pout, OUTPUT POWER (WATTS) PEP VCC = 26 V ICQ = 100 mA f1 = 1990 MHz f2 = 1990.1 MHz – 15 – 20 – 25 – 35 – 40 5th – 45 7th – 50 – 55 – 60 30 0 IMD, INTERMODULATION DISTORTION (dBc) – 20 VCC = 26 V f1 = 1880 MHz f2 = 1880.1 MHz – 25 – 30 – 35 ICQ = 50 mA – 40 100 mA – 45 – 50 150 mA 200 mA – 55 0.1 1 10 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion versus Output Power MRF6408 4 10 20 Pout, OUTPUT POWER (WATTS) PEP 30 Figure 5. Intermodulation Distortion versus Output Power – 10 – 15 3rd Order – 30 Figure 4. Intermodulation Distortion versus Output Power IMD, INTERMODULATION DISTORTION (dBc) 1.85 Figure 3. Output Power (CW) versus Frequency IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) Pin = 3 W 18 100 – 10 VCC = 26 V f1 = 1990 MHz f2 = 1990.1 MHz – 15 – 20 – 25 ICQ = 50 mA – 30 – 35 – 40 100 mA 150 mA – 45 – 50 – 55 0.1 200 mA 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 7. Intermodulation Distortion versus Output Power MOTOROLA RF DEVICE DATA ∞ INDUCTIVE ELEMENT (+j) 0.0 1.8 GHz CAPACITIVE ELEMENT (–j) Zin 1.8 GHz 2 GHz ZOL* 2 GHz Normalized to 20 W f MHz Zin Ohms ZOL* Ohms 1800 7.5 – j2.5 5.1 – j4.5 1900 6.5 – j4 4.6 – j5.1 2000 4 – j5.9 4.1 – j6.4 ZOL*: Conjugate of optimum load impedance into which the device operates at a given output power, voltage current and frequency. Figure 8. Input and Output Impedances with Circuit Tuned for Maximum Gain @ VCC = 26 V, ICQ = 100 mA, Pout = 12 W (CW) MOTOROLA RF DEVICE DATA MRF6408 5 VCE (Vdc) IC (Adc) f (MHz) 26 1.0 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 S11 |S11| 0.987 0.986 0.984 0.982 0.979 0.974 0.970 0.962 0.950 0.932 0.899 0.845 0.761 0.670 0.667 0.746 0.823 0.875 0.907 0.928 0.941 S21 éφ |S21| 0.502 0.478 0.570 0.553 0.623 0.660 0.757 0.790 0.932 0.996 1.272 1.407 1.587 1.763 1.671 1.390 1.184 0.901 0.755 0.614 0.484 Ă – 176 – 176 – 175 – 175 – 174 – 173 – 172 – 171 – 170 – 169 – 167 – 165 – 165 – 170 – 179 – 173 – 173 – 174 – 176 – 177 – 178 S12 éφ |S12| 0.012 0.012 0.014 0.014 0.017 0.017 0.021 0.021 0.025 0.028 0.031 0.035 0.041 0.041 0.039 0.030 0.024 0.018 0.015 0.013 0.010 Ă – 179 – 177 – 179 – 177 – 176 – 177 – 176 – 170 – 169 – 161 – 154 – 145 – 132 – 109 – 092 – 069 – 061 – 046 – 044 – 038 – 036 S22 éφ |S22| 0.898 0.886 0.874 0.859 0.844 0.826 0.807 0.785 0.760 0.727 0.690 0.649 0.628 0.672 0.776 0.861 0.897 0.911 0.909 0.921 0.901 Ă – 136 – 136 – 138 – 137 – 140 – 140 – 138 – 138 – 132 – 131 – 123 – 113 – 100 – 076 – 055 – 035 – 013 – 001 – 012 – 022 – 037 éφ Ă – 172 – 172 – 172 – 171 – 171 – 171 – 171 – 171 – 171 – 172 – 173 – 177 – 176 – 168 – 166 – 168 – 172 – 175 – 177 – 179 – 179 Table 1. Small Signal S–Parameters ÌÌÌ ÌÌÌ Ì ÌÌ ÌÌ ÌÌÌ Ì ÌÌ ÌÌÌ ÌÌ Ì ÌÌ Ì ÌÌÌ ÌÌ Ì ÌÌ ÌÌÌ Ì ÌÌÌÌ Ì ÌÌ Ì ÌÌ Ì ÌÌ ÌÌ ÌÌ Ì ÌÌ ÌÌ ÌÌ Ì Ì ÌÌ Ì Ì Ì Ì Ì ÌÌ ÌÌ ÌÌÌ ÌÌÌ Ì ÌÌÌ ÌÌ Ì ÌÌÌ ÌÌÌ ÌÌÌÌ ÌÌ Ì ÌÌ Ì ÌÌ ÌÌ ÑÑ Ñ ÌÌ ÌÌ Ì Ì ÌÌ Ì Ì ÌÌ ÌÌÌ ÌÌÌ ÌÌÌ ÌÌÌ ÌÌ ÌÌ ÑÑ Ñ ÌÌ ÌÌ Ì Ì Ñ Ì Ñ ÌÌ ÌÌ ÑÑ Ñ Ì ÌÌ ÌÌ ÌÌ ÌÌ ÌÌ ÌÌ ÌÌ ÌÌ Ì Ì ÌÌ ÌÌÌ Ì Ì ÌÌÌ ÌÌ ÌÌ ÌÌÌ ÌÌ ÌÌ ÌÌÌ Ì ÌÌ Ì Ì ÌÌ ÌÌ Ñ Ì Ì Ì Ì Ì ÑÑ Ñ ÌÌ ÌÌÌ ÌÌ ÌÌ Ì ÌÌ ÌÌ ÌÌÌ ÌÌ ÌÌ ÌÌÌ Ì ÌÌ Ì Ì ÌÌ Ì ÌÌ Ì Ì Ì ÌÌ ÌÌÌ ÌÌ ÌÌÌ ÌÌ ÌÌ ÌÌÌ ÌÌ ÌÌ ÌÌÌ ÌÌÌ ÌÌÌ ÌÌ ÌÌ ÌÌ ÌÌ ÌÌ Ì ÌÌ ÌÌÌ ÌÌ ÌÌÌÌÌÌ ÌÌÌ ÌÌ ÌÌÌÌÌÌ ÌÌÌ VBB C12 C13 C12 C7 T2 T1 VBB +VCC L1 T1 C5 R3 P1 R4 C10 R1 C13 R2 C11 C2 C1 CT1 RF INPUT C4 C8 C9 C2 C1 CT3 RF OUTPUT Figure 9. 1.88 GHz Test Circuit Components Layout MRF6408 6 CT2 R2 C5 R1 C10 C9 L1 P1 R4 C8 C11 C7 T2 R3 C4 +VCC CT1 CT2 RF INPUT RF OUTPUT Figure 10. 1.99 GHz Test Circuit Components Layout MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS –A– U Q 2 PL 1 0.51 (0.020) M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E H J K N Q U –B– 3 K 2 D N MILLIMETERS MIN MAX 18.77 19.05 6.10 6.60 4.19 5.03 5.46 5.72 1.40 1.78 2.01 2.31 0.10 0.15 5.33 6.10 8.00 8.38 3.18 3.42 14.23 BSC STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER E J H INCHES MIN MAX 0.739 0.750 0.240 0.260 0.165 0.198 0.215 0.225 0.055 0.070 0.079 0.091 0.004 0.006 0.210 0.240 0.315 0.330 0.125 0.135 0.560 BSC C –T– SEATING PLANE CASE 395C–01 ISSUE A MOTOROLA RF DEVICE DATA MRF6408 7 Motorola reserves the right to make changes without further notice to any products herein. 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Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: [email protected] – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps MRF6408 8 ◊ MRF6408/D MOTOROLA RF DEVICE DATA