2N4403 Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistor (PNP) TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor 2N4401 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18. • This transistor is also available in the SOT-23 case with the type designation MMBT4403. Mechanical Data max. ∅ 0.022 (0.55) 0.098 (2.5) Dimensions in inches and (millimeters) Bottom View Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk – 5K per container, 20K/box E7/4K per Ammo mag., 20K/box Maximum Ratings & Thermal Characteristics Parameter Ratings at 25°C ambient temperature unless otherwise specified. Symbol Value Unit Collector-Emitter Voltage –VCEO 40 V Collector-Base Voltage –VCBO 40 V Emitter-Base Voltage –VEBO 5.0 V –IC 600 mA Collector Current Power Dissipation TA = 25°C Derate above 25°C Ptot 625 5.0 mW mW/°C Power Dissipation TC = 25°C Derate above 25°C Ptot 1.5 12 W mW/°C Thermal Resistance Junction to Ambient Air RΘJA 200 °C/W Thermal Resistance Junction to Case RΘJC 83.3 °C/W Junction Temperature Tj 150 °C Storage Temperature Range TS –55 to +150 °C Document Number 88118 08-May-02 www.vishay.com 1 2N4403 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit hFE –VCE = 1 V, –IC = 0.1 mA –VCE = 1 V, –IC = 1 mA –VCE = 1 V, –IC = 10 mA –VCE = 2 V, –IC = 150 mA –VCE = 2 V, –IC = 500 mA 30 60 100 100 20 — — — — — — — — 300 — — Collector Cutoff Current –ICEV –VEB = 0.4 V, –VCE = 35 V — — 100 nA Base Cutoff Current –IBEV –VEB = 0.4 V, –VCE = 35 V — — 100 nA Collector-Emitter Saturation Voltage(1) –VCEsat –IC = 150 mA, –IB = 15 mA –IC = 500 mA, –IB = 50 mA — — — — 0.40 0.75 V Base-Emitter Saturation Voltage(1) –VBEsat –IC = 150 mA, –IB = 15 mA –IC = 500 mA, –IB = 50 mA 0.75 — — — 0.95 1.30 V Collector-Emitter Breakdown Voltage –V(BR)CEO –IC = 1 mA, IB = 0 40 — — V Collector-Base Breakdown Voltage –V(BR)CBO –IC = 0.1 mA, IE = 0 40 — — V Emitter-Base Breakdown Voltage –V(BR)EBO –IE = 0.1 mA, IC = 0 5.0 — — V Input Impedance hie –VCE = 10 V, –IC = 1 mA, f = 1 kHz 1.5 — 15 kΩ Voltage Feedback Ratio hre –VCE = 10 V, –IC = 1 mA, f = 1 kHz 0.1 • 10-4 — 8 • 10-4 — Current Gain-Bandwidth Product fT –VCE = 10 V, –IC = 20 mA f = 100 MHz 200 — — MHz Collector-Base Capacitance CCB –VCB = 10 V, IE = 0, f = 1.0 MHz — — 8.5 pF Emitter-Base Capacitance CEB –VEB = 0.5 V, IC = 0 f = 1.0 MHz — — 30 pF Small Signal Current Gain hfe –VCE = 10 V, –IC = 1 mA f = 1 kHz 60 — 500 — Output Admittance hoe –VCE = 10 V, –IC = 1 mA f = 1 kHz 1.0 — 100 µS J DC Current Gain Notes: (1) Pulse test: Pulse width ≤ 300µs - Duty cycle ≤ 2% www.vishay.com 2 Document Number 88118 08-May-02 2N4403 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T Parameter J = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit Delay Time (see fig. 1) td -IB1 = 15 mA, -IC = 150 mA, -VCC = 30 V, -VEB = 2 V — — 15 ns Rise Time (see fig. 1) tr -IB1 = 15 mA, -IC = 150 mA, -VCC = 30 V, -VEB = 2 V — — 20 ns Storage Time (see fig. 2) ts -IB1 = -IB2 = 15 mA, -IC = 150 mA, -VCC = 30 V — — 225 ns Fall Time (see fig. 2) tf -IB1 = -IB2 = 15 mA, -IC = 150 mA, -VCC = 30 V — — 30 ns Switching Time Equivalent Test Circuit Figure 2 - Turn-Off Time Figure 1 - Turn-On Time -30V -30V 200Ω < 2 ns 200Ω < 20 ns +2 V +14 V 0 0 C S* < 10 pF 1kΩ -16 V 1kΩ C S* < 10 pF -16 V 1.0 to 100µs Duty Cycle - 2% +4 V Document Number 88118 08-May-02 Scope rise time - 4ns *Total shunt capacitance of test jig, connectors and oscilloscope 1.0 to 100µs Duty Cycle - 2% +4 V www.vishay.com 3