Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2N5401 TO-92 TRANSISTOR (PNP) FEATURE Power dissipation PCM : 0.625 W (Tamb=25℃) 1. EMITTER Collector current A ICM : - 0.6 Collector-base voltage V(BR)CBO : -160 V Operating and storage junction temperature range 2. BASE 3. COLLECTOR 1 2 3 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100 µA, IE=0 -160 V Collector-emitter breakdown voltage V(BR)CEO Ic= -1 mA, IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO IE= -10 µA, IC=0 -5 V Collector cut-off current ICBO VCB= -120 V, IE=0 -0.1 µA Emitter cut-off current IEBO VEB= -4 V, IC=0 -0.1 µA hFE(1) VCE= -5 V, IC=-1 mA 80 hFE(2) VCE= -5 V, IC= -10 mA 80 hFE(3) VCE= -5 V, IC=-50 mA 50 Collector-emitter saturation voltage VCE(sat) IC= -50 mA, IB= -5 mA -0.5 V Base-emitter saturation voltage VBE(sat) IC= -50 mA, IB= -5 mA -1 V DC current gain 250 VCE=-5V, IC=-10mA Transition frequency fT 100 f =30MHz MHz CLASSIFICATION OF hFE(2) Rank A B C Range 80-160 120-180 150-250