i, LJ nc. TELEPHONE: (973) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212) 227-6005 FAX: (973) 376-8960 2N6077-2N6079, 40851 High-Voltage, High-Power Silicon N-P-N Transistor* For Switching and Linear Applications 2N6077, 2N6078, 2N6079 and 40851 are multiple epitaxial silicon n-p-n power transistors utilizing a multipleemitter-site structure. Multiple-epitaxial construction maximizes the volt-ampere characteristic of the device and provides fast switching speeds. Multiple-emittersite design ensures uniform current flow throughout the structure, which produces a high IS/D and a Iar9* safe-operation area. These devices use the popular JEDEC TO-66 package; they differ mainly in voltage ratings, leakage-current limits, and Vc£(sat) ratings. The 2N6077 is characterized for switching applications with load lines in the active region. These applications include sweep circuits and all circuits using the Transistor as an active voltage clamp. Type 2N6078 is characterized for switching applications with the load line extending into the reverse-bias region. Its voltage Features: • ratings make this device useful for switchjng regulators operating directly from a rectified 110-V or 220-V power line. The unit is rated to take surge currents up to 5 A and maintain saturation. Maximum safe-area-of-operation curves • Low saturation voltages • High voltage ratings: V CER (sus) = 300 V (2N6077) 275 V (2N6078) 375 V (2N6079) • High dissipation rating: Pj = 45 W The 2N6079 is characterized for use in inverters operating directly from a rectified 110-V power line. The leakage current is specified at 450 volts; therefore the device can also be used in a series bridge configuration on a 220-V line. The VEBO rating of 9 volts eases requirements on the drive transformer in inverter applications. Storage time, an important factor in the frequency stability of an inverter, is specified in Fig. 11, which shows variation in storage time with variation in load current from zero to maximum (4 A). TERMINAL DESIGNATIONS The 40851 is characterized for use in switching-regulator power supplies that operate directly from a 120-V or 240-V ac power line. MAXIMUM RATINGS, Absolute-Maximum Values: 2N6077 2N6078 2NB079 40851 •COLLECTOR-TO-BASE VOLTAGE COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE: With ten even • With ravtru bin (VBE) of -1.5V 300 275 375 450 VCEOlsutl 275 350 300 300 6 250 1 275 350 VCEX<»"«> 'EMinER-TO-BASE VOLTAGE •COLLECTOR CURRENT: Continuous CBO 'C It* 'CONTINUOUS BASE CURRENT IB 'TRANSISTOR DISSIPATION: ?T Atc«*t*nip*fatunHupto250C At an nmpvnurn ibovt ZS°C 'TEMPERATURE RANGE: StOfigi ft Operating (Junction) P'N TEMPERATURE (During Soldering!: —*' """tnett^ 1/32 in. (0.8 mm) from cut for 10 I m«x. . . . 7 10 4 45 375 9 V V V V 10 4 7 10 4 A A A 45 45 W 276 375 375 6 9 7 10 4 46 7 Dtritt linMrly to 200 C — -66 to +200 °c 230 °c •» >VPM In accorcfanct with JEDEC ragiitrition dtu forirat (JS-6, RDF-1). NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors 2N6077-2N6079, 40851 ELECTRICAL CHARACTERISTICS, At Case Temperature ITC> * 25°C unless otherwise specified LIMITS TEST CONDITIONS CHARACTERISTIC SYMBOL VOLTAGE V dc VCE VBE 'CEO 250 -1.5 'CEV 250 450 -1.5 -1.5 250 450 -1.6 -1.5 (Tc = 125°C> CURRENT A dc 'c 'B Min. 0 - Typ. Max. Min. •- 2 - 5 — 8 - — 1 - _ - Min. - - - 0.05 — — 0.2 - - - 0.5 _ 0.5 _ 5 — 5 — _ 1 - 1 — — V CEO (sus). 0.2* 275" - - 250*> - - ssofc - - 350" - V CER (sus) (R BE = 50n> 0.2' 300" - - 275" - - 375" - - 375b - 0 6 - - 6 - _ 9 - - 9 - 1.2* 12 28 70 12 28 70 12 28 50 12 - 1.0 1.2 1.6 1.9 1.0 1.6 1.0 1.6 _ 1.3 2 - 2 _ (IE = 1 mA) 1 VBE(sat) V CE (sat) 1.2' 3* 4" 5' 0.2 0.6 0.8 1 1.2' 3" 4' 5* 0.2 0.6 0.8 1 cobo (V CB =10V, f = 1MHz) Ihfel (f = 1 MHz) 10 'S/b (Pulse duration (non repetitive) » 1 s) 50 ES/b |RB = 50n, L=100fiH) 0.2 -4 3« - 0.5 1 0.15 0.25 - 1.5 2 0.15 0.5 0.3 3 - 0.5 3 - 3 mA V pF - - 150 - - 150 - - 1 7 - 1 7 - 1 7 - - - 0.9 - - 0.9 - - 0.9 - - 0.9 - A 0.45 - - 0.45 - - 0.45 - - 0.45 - mj 0.02 - - 0.02 - - 0.02 - - _ trC 1.2 0.2 - 0.3 0.75 - 0.3 0.75 - 0.3 0.75 - - ts' 1.2 0.2 - 2.8 5 - 2.8 5 - 2.8 5 - - tf e 1.2 0.2 - 0.3 0.75 - 0.3 0.75 - 0.3 0.75 - - - - 3.9 - - 3.9 - - 3.9 - - 2.25 V 150 - 20 V - 0.2 *2N-series types in accordance with JEOEC registration data format (JS-6, RDF-1). 'Pulsed; pulse duration < 350 ps, Duty factor = 2%. The sustaining voltages VCEQ(SUS|, and VQ E R(SUS). MUST NOT be measured on a curve tracer. ICM for 40851 mA - 1.2 bCAUTION: mA 0.5 0.15 <d' R0JC mA V v V EBO hFE _ UNITS Typ. Max. Min. Max. 0 0 -6 -9 'EBO — Typ. Max. - 40851 2N6079 2N6078 2N6077 MS °C/W