NEC NES1823P-30

PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NES1823P-30
30 W L-S BAND PUSH-PULL POWER GaAs MES FET
DESCRIPTION
The NES1823P-30 is a 30 W push-pull type GaAs MES FET designed for high power transmitter applications for
PCS, DCS and IMT 2000 base station systems. It is capable of delivering 30 watts of output power (CW) with high linear
gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz, however with different matching, 60
MHz or less of instantaneous bandwidth can be achieved anywhere from 0.8 to 2.3 GHz.
The device employs
0.9 µm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance,
thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• Push-pull type N-channel GaAs MES FET
• High output power
: 30 W TYP.
• High linear gain
: 13 dB TYP.
• High power added efficiency : 40 % TYP. @VDS = 10 V, IDset = 4 A, f = 2.2 GHz
ORDERING INFORMATION (PLAN)
Part Number
NES1823P-30
Package
Supplying Form
−
T-86
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NES1823P-30)
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
15
V
Gate to Source Voltage
VGSO
–7
V
Gate to Drain Voltage
VGDO
–18
V
Drain Current
ID
27
A
Gate Current
IG
180
mA
Total Power Dissipation
PT
90
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
–65 to +175
°C
Note
Note TC = 25°C
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14491EJ1V0DS00 (1st edition)
Date Published October 1999 N CP(K)
Printed in Japan
©
1999
NES1823P-30
RECOMMENDED OPERATING LIMITS
Parameter
MIN.
TYP.
MAX.
Unit
VDS
−
−
10.0
V
Gcomp
−
−
3.0
dB
Channel Temperature
Tch
−
−
+150
°C
Set Drain Current
IDset
−
−
5.0
A
−
−
30
Ω
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
Gain Compression
Note
Gate Resistance
Symbol
Test Condition
VDS = 10 V, RF OFF
Rg
Note Rg is the series resistance between the gate supply and FET gate.
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
Saturated Drain Current
IDSS
VDS = 2.5 V, VGS = 0 V
−
18.0
−
A
Pinch-off Voltage
Vp
VDS = 2.5 V, ID = 80 mA
–4.0
–2.6
−
V
Thermal Resistance
Rth
Channel to Case
−
1.3
1.7
°C/W
Output Power
Pout
44.0
45.0
−
dBm
Drain Current
ID
f = 2.2 GHz, VDS = 10 V
Pin = +36 dBm, Rg = 30 Ω
Note 2
IDset = 4.0 A Total (RF OFF)
−
7
9
A
−
40
−
%
11
13
−
dB
−
–40
−
dBc
Power Added Efficiency
Linear Gain
Note 1
3rd order Intermodulation
Distortion
ηadd
GL
IM3
∆f = +5 MHz,
Pout = 37 dBm (2-tone total)
Notes 1. Pin = +20 dBm
2. IDset = 2.0 A each drain
2
Preliminaly Data Sheet P14491EJ1V0DS00
NES1823P-30
TYPICAL CHARACTERISTICS (TA = +25°°C)
OUTPUT POWER AND POWER ADDED EFFICIENCY
vs. INPUT POWER
50
100
Pout
45
80
40
60
ηadd
35
40
30
20
25
Power Added Efficiency ηadd (%)
Output Power Pout (dBm)
VDS = 10 V IDset = 4.0 A Rg = 30 Ω
f = 2.2 GHz
∆f = 5 MHz
0
15
20
25
30
35
40
Input Power Pin (dBm)
3RD INTERMODULATION DISTORTION
vs. 2 TONE OUTPUT POWER
3rd Intermodulation Distortion IM3 (dBc)
0
VDS = 10 V IDset = 4.0 A Rg = 30 Ω
f = 2.2 GHz
∆
f = 5 MHz
–10
–20
–30
–40
–50
–60
30
35
40
45
2 Tone Output Power 2tonePout (dBm)
Preliminaly Data Sheet P14491EJ1V0DS00
3
NES1823P-30
S-PARAMETERS
VDS = 10 V, IDset = 2 A (each drain)
START 1 GHz, STOP 3 GHz, STEP 40 MHz
Marker
1: 1.8 GHz
2: 1.95 GHz
3: 2.1 GHz
4: 2.2 GHz
S11
S12
1.0
+90°
2.0
0.5
+135°
+45°
2
1
4 3
0.5
0
1
∞
2
±180°
4
3
–45°
–135°
–2.0
–0.5
0°
1
2
–1.0
–90°
Rmax. = 1
Rmax. = 0.05
S21
S22
+90°
1.0
2.0
0.5
+135°
+45°
2
4
2
±180°
3
0°
1
0
1 0.5
1
∞
2
3
4
–45°
–135°
–2.0
–0.5
–1.0
–90°
Rmax. = 5
4
Preliminaly Data Sheet P14491EJ1V0DS00
Rmax. = 1
NES1823P-30
S-PARAMETERS
VDS = 10 V, IDset = 2 A (each drain)
FREQUENCY
S11
S21
GHz
MAG.
ANG.
1.000
1.040
1.080
1.120
1.160
1.200
1.240
1.280
1.320
1.360
1.400
1.440
1.480
1.520
1.560
1.600
1.640
1.680
1.720
1.760
1.800
1.840
1.880
1.920
1.960
2.000
2.040
2.080
2.120
2.160
2.200
2.240
2.280
2.320
2.360
2.400
2.440
2.480
2.520
2.560
2.600
2.640
2.680
2.720
2.760
2.800
2.840
2.880
2.920
2.960
3.000
0.947
0.945
0.940
0.938
0.934
0.930
0.925
0.920
0.919
0.912
0.906
0.901
0.894
0.886
0.877
0.867
0.855
0.840
0.825
0.809
0.787
0.758
0.730
0.696
0.661
0.632
0.612
0.611
0.628
0.657
0.690
0.723
0.747
0.770
0.787
0.799
0.808
0.815
0.813
0.817
0.814
0.811
0.809
0.803
0.796
0.789
0.786
0.779
0.775
0.771
0.768
162.6
160.9
159.3
157.6
155.8
154.1
152.1
150.5
148.5
146.6
144.4
142.6
140.7
138.7
136.7
134.7
132.9
131.0
129.1
127.4
125.9
124.5
123.5
123.2
123.8
125.8
128.7
132.4
135.6
137.7
138.6
138.6
137.9
136.9
135.8
134.6
133.5
132.4
131.3
130.0
129.1
128.1
127.3
126.3
125.6
124.6
123.7
123.0
122.2
121.4
120.3
MAG.
(deg.)
S12
ANG.
MAG.
(deg.)
1.080
1.069
1.054
1.042
1.051
1.032
1.050
1.051
1.068
1.079
1.102
1.132
1.168
1.200
1.235
1.290
1.326
1.364
1.404
1.472
1.525
1.583
1.659
1.718
1.829
1.833
1.863
1.830
1.770
1.393
1.465
1.425
1.211
1.143
0.979
0.911
0.834
0.737
0.719
0.610
0.651
0.552
0.549
0.488
0.486
0.454
0.423
0.411
0.386
0.396
0.357
61.6
60.8
58.4
57.2
54.8
53.0
51.9
49.1
48.0
44.8
43.8
40.5
38.3
34.5
31.6
28.3
23.1
20.0
14.8
11.4
4.6
1.0
–6.7
–11.5
–20.3
–29.9
–38.4
–49.8
–57.4
–70.7
–76.7
–86.2
–92.2
–98.0
–103.7
–104.8
–111.1
–111.5
–116.5
–117.0
–119.9
–123.6
–124.4
–127.3
–127.7
–131.6
–133.1
–133.8
–135.3
–137.4
–140.5
S22
ANG.
MAG.
ANG.
0.821
0.818
0.816
0.811
0.809
0.805
0.804
0.800
0.796
0.792
0.789
0.786
0.783
0.779
0.776
0.773
0.769
0.770
0.771
0.768
0.771
0.776
0.780
0.793
0.813
0.833
0.857
0.881
0.897
0.911
0.918
0.918
0.924
0.919
0.916
0.908
0.906
0.896
0.895
0.890
0.885
0.881
0.875
0.871
0.867
0.864
0.857
0.854
0.848
0.845
0.838
174.6
174.1
173.7
173.0
172.6
171.9
171.2
170.6
170.0
169.2
168.6
168.0
167.2
166.5
165.9
165.3
164.9
164.5
164.2
164.0
163.9
163.7
164.0
164.0
163.9
163.7
162.8
161.6
160.0
158.2
156.7
155.1
153.5
152.3
151.5
150.4
149.7
149.1
148.5
148.1
147.8
147.3
147.1
146.8
146.4
146.0
145.9
145.5
145.1
144.6
144.3
(deg.)
0.008
0.009
0.009
0.010
0.010
0.010
0.011
0.011
0.011
0.012
0.012
0.013
0.013
0.013
0.014
0.014
0.015
0.015
0.016
0.016
0.017
0.018
0.018
0.018
0.019
0.019
0.018
0.017
0.015
0.014
0.012
0.010
0.009
0.008
0.007
0.006
0.006
0.007
0.007
0.007
0.007
0.008
0.008
0.009
0.009
0.010
0.011
0.012
0.013
0.014
0.015
Preliminaly Data Sheet P14491EJ1V0DS00
29.0
29.2
27.2
26.4
25.5
24.2
23.6
21.0
20.3
16.7
15.9
13.0
12.4
9.3
5.9
3.8
–0.3
–4.0
–9.0
–12.9
–19.6
–25.5
–33.0
–40.7
–50.0
–61.0
–72.8
–85.1
–99.4
–112.1
–125.7
–138.2
–154.3
–168.9
176.2
160.1
150.4
132.1
126.2
113.5
109.1
101.0
96.3
92.6
87.1
85.6
81.3
77.4
76.4
71.5
71.2
(deg.)
5
NES1823P-30
45˚
G2
S
S
D1
G1, G2: Gate
D1, D2: Drain
S: Source
D2
1.4 ± 0.2
14.5 ± 0.3
4.7 MAX.
7.8 ± 0.2
24.5 ± 0.3
1.8 ± 0.2
0.1
2.4 ± 0.2
20.9 ± 0.3
6
Preliminaly Data Sheet P14491EJ1V0DS00
19.4 ± 0.4
G1
11.4 ± 0.3
R1.2 ± 0.3
5.7 ± 0.3
2.4 ± 0.3
PACKAGE DIMENSIONS (UNIT: mm)
NES1823P-30
RECOMMENDED MOUNTING CONDITION FOR CORRECT USE
(1) Fix to a heatsink or mount surface completely with screw at the four holes of the flange.
(2) Recommended torque strength of the screw is 3 kgF typical using M2.3 type screw.
(3) Recommended flatness of the mount surface is less than ±10 µm. (roughness of surface is
)
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions.
For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method
Partial Heating
Soldering Conditions
Recommended Condition Symbol
Pin temperature: 260°C
Time: 5 seconds or less (per pin row)
–
For details of recommended soldering conditions, please contact your local NEC sales office.
Preliminaly Data Sheet P14491EJ1V0DS00
7
NES1823P-30
CAUTION
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8