Power Transistors 2SB0941, 2SB0941A Silicon PNP epitaxial planar type Unit: mm Parameter Collector to base voltage 2SB0941 Collector to emitter voltage 2SB0941 Symbol Rating Unit VCBO −60 V φ 3.1±0.1 1.4±0.1 −60 VCEO V −80 2SB0941A VEBO −5 V Peak collector current ICP −5 A Collector current IC −3 A PC 35 W TC = 25°C Ta = 25°C 1.3±0.2 0.5+0.2 –0.1 0.8±0.1 2.54±0.3 −80 2SB0941A 2.7±0.2 5.08±0.5 Emitter to base voltage Collector power dissipation 16.7±0.3 14.0±0.5 ■ Absolute Maximum Ratings TC = 25°C 5.5±0.2 Solder Dip (4.0) • High forward current transfer ratio hFE which has satisfactory linearity • Low collector to emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw 4.2±0.2 7.5±0.2 ■ Features 10.0±0.2 4.2±0.2 0.7±0.1 For low-frequency power amplification Complementary to 2SD1266 and 2SD1266A 1 : Base 2 : Collector 3 : Emitter EIAJ : SC-67 TO-220F Package 1 2 3 2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics TC = 25°C Parameter Symbol Collector cutoff current 2SB0941 Collector cutoff current 2SB0941 ICEO 2SB0941A Emitter cutoff current Collector to emitter voltage ICES 2SB0941A 2SB0941 Conditions Max Unit VCE = −60 V, VBE = 0 −200 µA VCE = −80 V, VBE = 0 −200 VCE = −30 V, IB = 0 −300 VCE = −60 V, IB = 0 −300 IEBO VEB = −5 V, IC = 0 VCEO IC = −30 mA, IB = 0 hFE1 * VCE = −4 V, IC = −1 A 70 Base to emitter voltage hFE2 VCE = −4 V, IC = −3 A 10 VBE VCE = −4 V, IC = −3 A Collector to emitter saturation voltage Typ −1 −60 µA mA V −80 2SB0941A Forward current transfer ratio Min VCE(sat) 250 −1.8 IC = −3 A, IB = − 0.375 A −1.2 V V fT VCE = −10 V, IC = − 0.5 A, f = 10 MHz Turn-on time ton IC = −1 A, IB1 = − 0.1 A, IB2 = 0.1 A Storage time tstg Fall time tf 0.3 µs Transition frequency 30 MHz 0.5 µs 1.2 µs Note) *: Rank classification Rank Q P hFE1 70 to 150 120 to 250 Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification. 1 2SB0941, 2SB0941A Power Transistors PC T a IC VCE 40 30 (1) 20 10 TC=25˚C IB=–100mA –4 –80mA –60mA –3 –40mA –30mA –20mA –2 40 60 80 100 120 140 160 –2 –6 –8 0 Collector to emitter voltage VCE (V) TC=100˚C –25˚C 25˚C –1 –3 300 100 TC=100˚C 25˚C –25˚C 30 10 –1 –3 t=1ms IC 10ms –1 DC – 0.3 – 0.03 – 0.01 –1 –3 –10 –30 2SB0941A 2SB0941 – 0.1 –100 –300 –1000 Collector to emitter voltage VCE (V) –1 –3 Collector current IC (A) Rth(t) t Thermal resistance Rth(t) (˚C/W) –3 10 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 103 ICP 30 3 Area of safe operation (ASO) –10 100 Collector current IC (A) –100 –30 VCE=–5V f=10MHz TC=25˚C 300 3 Collector current IC (A) (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 –2.0 1000 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 Non repetitive pulse TC=25˚C –1.6 3000 3000 Transition frequency fT (MHz) –1 –1.2 fT I C 1000 –3 – 0.8 VCE=–4V Forward current transfer ratio hFE –10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 – 0.4 Base to emitter voltage VBE (V) 10000 IC/IB=10 – 0.1 Collector current IC (A) –10 hFE IC – 0.3 2 –2 10000 –30 –25˚C –4 0 –4 VCE(sat) IC –100 – 0.03 25˚C TC=100˚C –4mA –16mA 0 Ambient temperature Ta (˚C) –6 –8mA 0 20 –8 –12mA –1 (4) 0 VCE=–4V –5 (2) (3) –10 Collector current IC (A) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 Collector to emitter saturation voltage VCE(sat) (V) IC VBE –6 Collector current IC (A) Collector power dissipation PC (W) 50 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 –10