NUD3160 Industrial Inductive Load Driver This MicroIntegrationt part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a free−wheeling diode. It accepts logic level inputs, thus allowing it to be driven by a large variety of devices including logic gates, inverters, and microcontrollers. http://onsemi.com MARKING DIAGRAMS Features 3 • Provides Robust Interface between D.C. Relay Coils and Sensitive 1 Logic 2 • Capable of Driving Relay Coils Rated up to 150 mA at 12 V, 24 V • • • • JW8 MG G JW8 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) or 48 V Replaces 3 or 4 Discrete Components for Lower Cost Internal Zener Eliminates Need for Free−Wheeling Diode Meets Load Dump and other Automotive Specs Pb−Free Packages are Available SC−74 CASE 318F STYLE 7 6 Typical Applications 1 • Automotive and Industrial Environment • Drives Window, Latch, Door, and Antenna Relays JW8 MG G JW8 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) Benefits • • • • SOT−23 CASE 318 STYLE 21 Reduced PCB Space Standardized Driver for Wide Range of Relays Simplifies Circuit Design and PCB Layout Compliance with Automotive Specifications ORDERING INFORMATION Device NUD3160LT1 NUD3160LT1G NUD3160DMT1 Package Shipping† SOT−23 SOT−23 (Pb−Free) 3000/Tape & Reel SC−74 3000/Tape & Reel SC−74 NUD3160DMT1G (Pb−Free) 3000/Tape & Reel 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Drain (3) Gate (1) Gate (2) 10 k 100 k Drain (3) Drain (6) 10 k 10 k 100 k 100 k Source (2) Source (4) Source (1) CASE 318 Gate (5) CASE 318F Figure 1. Internal Circuit Diagrams © Semiconductor Components Industries, LLC, 2005 November, 2005 − Rev. 2 1 Publication Order Number: NUD3160/D NUD3160 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Rating Symbol Value Unit VDSS Drain−to−Source Voltage – Continuous (TJ = 125°C) 60 V VGSS Gate−to−Source Voltage – Continuous (TJ = 125°C) 12 V ID Drain Current – Continuous (TJ = 125°C) 150 mA EZ Single Pulse Drain−to−Source Avalanche Energy (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) 200 mJ PPK Peak Power Dissipation, Drain−to−Source (Notes 1 and 2) (TJ Initial = 85°C) 20 W ELD1 Load Dump Pulse, Drain−to−Source (Note 3) RSOURCE = 0.5 W, T = 300 ms) (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) 60 V ELD2 Inductive Switching Transient 1, Drain−to−Source (Waveform: RSOURCE = 10 W, T = 2.0 ms) (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) 100 V ELD3 Inductive Switching Transient 2, Drain−to−Source (Waveform: RSOURCE = 4.0 W, T = 50 ms) (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) 300 V Rev−Bat Reverse Battery, 10 Minutes (Drain−to−Source) (For Relay’s Coils/Inductive Loads of 80 W or more) −14 V Dual−Volt Dual Voltage Jump Start, 10 Minutes (Drain−to−Source) 28 V 2000 V Value Unit ESD Human Body Model (HBM) According to EIA/JESD22/A114 Specification THERMAL CHARACTERISTICS Symbol TA Operating Ambient Temperature −40 to 125 °C TJ Maximum Junction Temperature 150 °C −65 to 150 °C TSTG Storage Temperature Range PD Total Power Dissipation (Note 4) Derating above 25°C SOT−23 225 1.8 mW mW/°C PD Total Power Dissipation (Note 4) Derating above 25°C SC−74 380 3.0 mW mW/°C SOT−23 SC−74 556 329 °C/W RqJA 1. 2. 3. 4. Rating Thermal Resistance Junction–to–Ambient (Note 4) Nonrepetitive current square pulse 1.0 ms duration. For different square pulse durations, see Figure 12. Nonrepetitive load dump pulse per Figure 3. Mounted onto minimum pad board. http://onsemi.com 2 NUD3160 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Min Typ Max Unit VBRDSS 61 66 70 V − − − − − − − − 0.5 1.0 50 80 − − − − − − − − 60 80 90 110 1.3 1.3 1.8 − 2.0 2.0 − − − − − − − − 2.4 3.7 1.8 2.9 150 100 200 − − − gFS − 400 − mmho Input Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) Ciss − 30 − pf Output Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) Coss − 14 − pf Transfer Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) Crss − 6.0 − pf tPHL tPLH − − 918 798 − − tPHL tPLH − − 331 1160 − − tf tr − − 2290 618 − − tf tr − − 622 600 − − Characteristic OFF CHARACTERISTICS Drain to Source Sustaining Voltage (ID = 10 mA) Drain to Source Leakage Current (VDS = 12 V, VGS = 0 V) (VDS = 12 V, VGS = 0 V, TJ = 125°C) (VDS = 60 V, VGS = 0 V) (VDS = 60 V, VGS = 0 V, TJ = 125°C) IDSS Gate Body Leakage Current (VGS = 3.0 V, VDS = 0 V) (VGS = 3.0 V, VDS = 0 V, TJ = 125°C) (VGS = 5.0 V, VDS = 0 V) (VGS = 5.0 V, VDS = 0 V, TJ = 125°C) IGSS mA mA ON CHARACTERISTICS Gate Threshold Voltage (VGS = VDS, ID = 1.0 mA) (VGS = VDS, ID = 1.0 mA, TJ = 125°C) VGS(th) Drain to Source On−Resistance (ID = 150 mA, VGS = 3.0 V) (ID = 150 mA, VGS = 3.0 V, TJ = 125°C) (ID = 150 mA, VGS = 5.0 V) (ID = 150 mA, VGS = 5.0 V, TJ = 125°C) RDS(on) Output Continuous Current (VDS = 0.3 V, VGS = 5.0 V) (VDS = 0.3 V, VGS = 5.0 V, TJ = 125°C) IDS(on) Forward Transconductance (VDS = 12 V, ID = 150 mA) V W mA DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS Propagation Delay Times: High to Low Propagation Delay; Figure 2, (VDS = 12 V, VGS = 3.0 V) Low to High Propagation Delay; Figure 2, (VDS = 12 V, VGS = 3.0 V) High to Low Propagation Delay; Figure 2, (VDS = 12 V, VGS = 5.0 V) Low to High Propagation Delay; Figure 2, (VDS = 12 V, VGS = 5.0 V) Transition Times: Fall Time; Figure 2, (VDS = 12 V, VGS = 3.0 V) Rise Time; Figure 2, (VDS = 12 V, VGS = 3.0 V) ns ns Fall Time; Figure 2, (VDS = 12 V, VGS = 5.0 V) Rise Time; Figure 2, (VDS = 12 V, VGS = 5.0 V) http://onsemi.com 3 NUD3160 TYPICAL WAVEFORMS (TJ = 25°C unless otherwise specified) VIH Vin 50% 0V tPHL tPLH VOH 90% Vout 50% 10% VOL tr tf Figure 2. Switching Waveforms tr Load Dump Pulse Not Suppressed: Vr = 13.5 V Nominal ±10% VS = 60 V Nominal ±10% T = 300 ms Nominal ±10% tr = 1 − 10 ms ±10% 90% 10% of Peak; Reference = Vr, Ir 10% Vr, Ir Figure 3. Load Dump Waveform Definition http://onsemi.com 4 VS T NUD3160 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise specified) 80 VDS = 60 V 70 IGSS GATE LEAKAGE (mA) IDSS, DRAIN LEAKAGE (mA) 80 60 50 40 30 20 10 0 −50 −25 0 25 50 100 75 VGS = 5 V 50 40 VGS = 3 V 30 −25 100 75 Figure 5. Gate−to−Source Leakage vs. Junction Temperature 125 1E+03 VGS = 5 V ID = 10 mA 65.8 65.6 65.4 65.2 VGS = 2.5 V VGS = 3 V 1E+02 VGS = 2 V 1E+01 1E+00 1E−01 VGS = 1.5 V 1E−02 65.0 −25 0 25 75 50 100 1E−03 0.0 125 0.1 TJ, JUNCTION TEMPERATURE (°C) 0.1 0.01 0.001 125 °C 1E−04 1E−05 1.2 1.4 −40 °C 1.6 1.8 2.0 2.2 2.4 VGS, GATE−TO−SOURCE VOLTAGE (V) 2.6 RDS(ON), DRAIN−TO−SOURCE RESISTANCE (mW) VDS = 0.8 V 25 °C 0.3 0.4 0.5 0.6 0.7 0.8 Figure 7. Output Characteristics 1 85 °C 0.2 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 6. Breakdown Voltage vs. Junction Temperature ID DRAIN CURRENT (mA) 50 Figure 4. Drain−to−Source Leakage vs. Junction Temperature 66.0 1E−07 1.0 25 TJ, JUNCTION TEMPERATURE (°C) 66.2 1E−06 0 TJ, JUNCTION TEMPERATURE (°C) ID DRAIN CURRENT (mA) BVDSS BREAKDOWN VOLTAGE (V) 60 20 −50 125 66.4 64.8 −50 70 3200 ID = 0.15 A 2800 2400 VGS = 3.0 V 2000 1600 VGS = 5.0 V 1200 800 −50 Figure 8. Transfer Function −25 0 25 50 75 TJ, JUNCTION TEMPERATURE (°C) Figure 9. On Resistance Variation vs Junction Temperature http://onsemi.com 5 100 125 NUD3160 TYPICAL PERFORMANCE CURVES 100 ID = 250 mA 125 °C VZ ZENER CLAMP VOLTAGE (V) 90 80 70 60 85 °C 50 25 °C 40 30 −40 °C 20 10 0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 68.0 67.5 67.0 66.5 −40 °C 66.0 65.5 25 °C 85 °C 65.0 64.5 64.0 63.5 63.0 62.5 62.0 0.1 125 °C 1.0 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 Figure 11. Zener Clamp Voltage vs. Zener Current 100 10 1 0.1 100 IZ, ZENER CURRENT (mA) Figure 10. On Resistance Variation vs. Gate−to−Source Voltage POWER (WATTS) RDS(ON), DRAIN−TO−SOURCE RESISTANCE (mW) (TJ = 25°C unless otherwise specified) 1.0 10 PW, PULSE WIDTH (ms) Figure 12. Maximum Non−repetitive Surge Power vs. Pulse Width http://onsemi.com 6 100 1000 NUD3160 APPLICATIONS INFORMATION 12 V Battery − + NC NO Relay, Vibrator, or Inductive Load Drain (3) Gate (1) Micro Processor Signal for Relay 10 k 100 K NUD3160 Source (2) Figure 13. Applications Diagram http://onsemi.com 7 NUD3160 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 DIM A A1 b c D E e L L1 HE 2 b 0.25 e q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 8 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 NUD3160 PACKAGE DIMENSIONS SC−74 CASE 318F−05 ISSUE L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F−01, −02, −03 OBSOLETE. NEW STANDARD 318F−04. D 6 5 4 2 3 E HE 1 DIM A A1 b c D E e L HE q b e C A 0.05 (0.002) q L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.37 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.015 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° STYLE 7: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 SOLDERING FOOTPRINT* 2.4 0.094 0.95 0.037 1.9 0.074 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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