Power Transistors 2SB1499, 2SB1499A Silicon PNP epitaxial planar type For low-freauency power amplification ■ Features ■ Absolute Maximum Ratings Parameter Symbol Collector to 2SB1499 base voltage 2SB1499A Collector to (TC=25˚C) Ratings –60 VCBO 2SB1499 –80 –60 VCEO emitter voltage 2SB1499A –80 Unit V VEBO –5 V Peak collector current ICP –8 A Collector current IC –4 A dissipation Ta=25°C Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C Symbol 2SB1499 current 2SB1499A Collector cutoff 2SB1499 current 2SB1499A Emitter cutoff current Collector to emitter 2SB1499 voltage 2SB1499A Forward current transfer ratio 1.2±0.1 C1.0 2.25±0.2 0.65±0.1 1.05±0.1 0.55±0.1 0.55±0.1 C1.0 1 2 3 2.5±0.2 1:Base 2:Collector 3:Emitter MT4 Type Package (TC=25˚C) Parameter Collector cutoff 0.35±0.1 W 2 ■ Electrical Characteristics 90° 2.5±0.2 15 PC 1.0 V Emitter to base voltage Collector power TC=25°C 5.0±0.1 10.0±0.2 2.5±0.2 ● High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping 13.0±0.2 4.2±0.2 ● 18.0±0.5 Solder Dip ● Unit: mm Conditions min typ max VCE = –60V, VBE = 0 –400 VCE = –80V, VBE = 0 –400 VCE = –30V, IB = 0 –700 VCE = –60V, IB = 0 –700 IEBO VEB = –5V, IC = 0 –1 VCEO IC = –30mA, IB = 0 hFE1* VCE = –4V, IC = –1A 70 hFE2 VCE = –4V, IC = –3A 15 ICES ICEO –60 Unit µA µA mA V –80 250 Base to emitter voltage VBE VCE = –4V, IC = –3A –2 V Collector to emitter saturation voltage VCE(sat) IC = –4A, IB = – 0.4A –1.5 V Transition frequency fT VCE = –10V, IC = – 0.1A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf *h FE1 IC = –4A, IB1 = – 0.4A, IB2 = 0.4A 30 MHz 0.2 µs 0.5 µs 0.2 µs Rank classification Rank Q P hFE1 70 to 150 120 to 250 1 Power Transistors 2SB1499, 2SB1499A PC — Ta IC — VCE –10 IB=–120mA (1) 10 5 –80mA –4 –60mA –3 –40mA –20mA –2 –10mA (2) 40 60 80 100 120 140 160 –25˚C –4 –2 –4 –6 –8 –10 –12 0 Collector to emitter voltage VCE (V) VCE(sat) — IC hFE — IC 3000 Transition frequency fT (MHz) –1 25˚C TC=100˚C –25˚C – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 100 1000 TC=100˚C –25˚C 30 10 3 Collector current IC (A) 300 100 30 10 3 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 –1 –3 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 Collector current IC (A) Area of safe operation (ASO) –100 –1 –3 Collector current IC (A) Rth(t) — t Non repetitive pulse TC=25˚C Thermal resistance Rth(t) (˚C/W) 10000 –30 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 1000 –10 ICP –3 IC t=1ms 10ms –1 DC – 0.3 – 0.03 – 0.01 –1 –3 –10 –30 2SB1499A 2SB1499 – 0.1 –100 –300 –1000 Collector to emitter voltage VCE (V) 100 (1) (2) 10 1 0.1 10–4 –2.0 VCE=–5V f=10MHz TC=25˚C 3000 25˚C 300 –1.6 fT — IC 1000 –3 –1.2 VCE=–4V Forward current transfer ratio hFE –10 – 0.8 10000 IC/IB=10 –30 – 0.3 – 0.4 Base to emitter voltage VBE (V) 10000 –100 Collector current IC (A) TC=100˚C 0 0 Ambient temperature Ta (˚C) – 0.1 25˚C –6 –5mA 0 20 –8 –2 –8mA –1 0 2 VCE=–4V –100mA –5 15 TC=25˚C Collector current IC (A) (1) TC=Ta (2) Without heat sink (PC=2.0W) 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE –6 Collector current IC (A) Collector power dissipation PC (W) 20 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 –10