Power Transistors 2SB0953, 2SB0953A (2SB953, 2SB953A) Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1444 and 2SD1444A Unit: mm ■ Absolute Maximum Ratings Parameter 2SB0953 base voltage 2SB0953A Collector to 2SB0953 Ratings V –50 –20 VCEO Emitter to base voltage –5 Peak collector current ICP –12 A Collector current IC –7 A dissipation Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C 2SB0953A Emitter cutoff current Collector to emitter 2SB0953 voltage 2SB0953A 7.5±0.2 4.2±0.2 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) (TC=25˚C) Symbol current 0.8±0.1 W 2 Parameter 2SB0953 1.4±0.1 V 30 ■ Electrical Characteristics Collector cutoff φ3.1±0.1 1 PC Ta=25°C 2.7±0.2 V –40 VEBO Collector power TC=25°C 16.7±0.3 Unit –40 VCBO emitter voltage 2SB0953A 4.2±0.2 5.5±0.2 (TC=25˚C) Symbol Collector to 10.0±0.2 4.0 ● 14.0±0.5 ● Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package which can be installed to the heat sink with one screw Solder Dip ● 0.7±0.1 ■ Features Conditions min typ max VCB = –40V, IE = 0 –50 VCB = –50V, IE = 0 –50 IEBO VEB = –5V, IC = 0 –50 VCEO IC = –10mA, IB = 0 ICBO –20 Unit µA µA V –40 hFE1 VCE = –2V, IC = – 0.1A 45 hFE2* VCE = –2V, IC = –2A 90 Collector to emitter saturation voltage VCE(sat) IC = –5A, IB = – 0.16A – 0.6 V Base to emitter saturation voltage VBE(sat) IC = –5A, IB = – 0.16A –1.5 V Transition frequency fT VCE = –10V, IC = – 0.5A, f = 10MHz 150 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 140 pF Turn-on time ton 0.1 µs Storage time tstg 0.5 µs Fall time tf 0.1 µs Forward current transfer ratio *h FE2 Rank classification Rank Q P hFE2 90 to 180 130 to 260 IC = –2A, IB1 = –66mA, IB2 = 66mA 260 Note: Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the rank classification. Note.) The Part numbers in the Parenthesis show conventional part number. 1 Power Transistors 2SB0953, 2SB0953A IC — VCE 40 30 (1) 20 10 –50mA –45mA –40mA –5 (2) –35mA –4 –30mA –3 –25mA –20mA –2 –10mA 0 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –1 –2 –3 –4 –5 –6 TC=–25˚C 100˚C 25˚C – 0.1 – 0.03 – 0.3 –1 –3 – 0.3 1000 25˚C TC=100˚C 300 100 –25˚C 30 10 3 300 100 30 10 3 Cob — VCB –1 –3 –10 –30 1 – 0.01 – 0.03 – 0.1 – 0.3 –100 Pulsed tw=1ms Duty cycle=1% IC/IB=30 (–IB1=IB2) VCC=–20V TC=25˚C –3 –1 ton ICP –10 IC t=1ms 10ms –3 –1 DC – 0.3 – 0.1 10 Non repetitive pulse TC=25˚C –30 tstg – 0.3 30 – 10 Area of safe operation (ASO) Collector current IC (A) Switching time ton,tstg,tf (µs) 100 –3 –100 –10 300 –1 Collector current IC (A) ton, tstg, tf — IC 10000 –10 VCE=–10V f=10MHz TC=25˚C Collector current IC (A) 1000 –3 3000 1 – 0.1 – 0.3 –10 IE=0 f=1MHz TC=25˚C –1 Collector current IC (A) VCE=–2V 3000 Collector current IC (A) 3000 – 0.01 – 0.1 10000 1000 – 0.01 – 0.1 –25˚C fT — IC 10000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) –3 – 0.3 –1 hFE — IC IC/IB=30 –1 25˚C Collector to emitter voltage VCE (V) VBE(sat) — IC –10 –3 – 0.3 Transition frequency fT (MHz) 40 IC/IB=30 TC=100˚C – 0.03 –5mA (4) 20 –10 – 0.1 –15mA –1 (3) 0 Collector output capacitance Cob (pF) TC=25˚C IB=–60mA Collector current IC (A) Collector power dissipation PC (W) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 tf – 0.1 – 0.03 3 1 – 0.1 – 0.3 – 0.03 – 0.01 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 2 VCE(sat) — IC –6 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 50 0 –1 –2 –3 –4 –5 –6 –7 Collector current IC (A) –8 – 0.01 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector to emitter voltage VCE (V) Power Transistors 2SB0953, 2SB0953A Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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