2SC4908 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) VCEO 800 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A hFE IC Symbol Conditions 2SC4908 Unit VCB=800V 100max µA VEB=7V 100max µA IC=10mA 800min V VCE=4V, IC=0.7A 10 to 30 10.1±0.2 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 35(Tc=25°C) W VBE(sat) IC=0.7A, IB=0.14A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.3A 6typ MHz °C COB VCB=10V, f=1MHz 40typ pF Tstg –55 to +150 IC (A) RL (Ω) 250 0.7 357 VBB2 (V) VBB1 (V) 3.9 V 1.35±0.15 1.35±0.15 2.4±0.2 2.2±0.2 IB2 (A) tstg (µs) ton (µs) –0.35 0.1 5max 1max tf (µs) Weight : Approx 2.0g a. Type No. b. Lot No. B C E 1max V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical) 0 0 1 2 3 0.1 Collector-Emitter Voltage V C E (V) 0.5 1 5 t on• t s t g • t f (µ s) –30˚C 10 5 1 3 t s tg V C C 250V I C :I B1 :I B2 =2:0.3:–1 1 tf 0.5 t on 0.2 0.1 0.5 1 3 0.3 1 p) mp) ase Tem 1000 fin ite 20 he at si nk M aximum Power Dissipa ti on P C (W) In Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% ith 1 W Collector Curr ent I C (A) 30 0.5 100 P c – T a Derating 5 Without Heatsink Natural Cooling 1.2 Time t(ms) 5 0.5 ase Te 10 35 1 1.0 0.5 10 s 0.8 1 10 0µ 0.6 4 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.4 Collector Current I C (A) Collector Current I C (A) Collector Curr ent I C ( A) Transient Thermal Resistance 25˚C Swi tchi ng T im e D C Cur r ent Gai n h F E 125˚C 0.5 0.2 θ j-a – t Characteristics t on •t stg • t f – I C Characteristics (Typical) 50 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.05 mp) 0 5 Collector Current I C (A) h FE – I C Characteristics (Typical) 2 0.02 e Te V C E (sat) 0 0.03 0.05 4 1 –30˚C (C I B =20mA V B E (sat) (Cas 60mA 1 1 2 25˚C (C 140mA 125˚C 200m A 2 I C /I B =5 Const, θ j - a (˚C /W) Collector Current I C (A) 300m A (V CE =4V) 3 2 Collector Current I C (A) 400 mA 50 3 Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 0m A I C – V CE Characteristics (Typical) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 IB1 (A) –5 10 ø3.3±0.2 a b ■Typical Switching Characteristics (Common Emitter) VCC (V) 4.2±0.2 2.8 c0.5 4.0±0.2 ICBO 0.8±0.2 V ±0.2 900 16.9±0.3 Unit VCBO External Dimensions FM20(TO220F) (Ta=25°C) 13.0min 2SC4908 8.4±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Symbol Application : Switching Regulator and General Purpose 10 Without Heatsink 0.1 50 100 500 Collector-Emitter Voltage V C E (V) 1000 0.1 50 100 500 Collector-Emitter Voltage V C E (V) 1000 2 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 121