Power Transistor 2SD1445A Silicon NPN epitaxial planar type Unit: mm 5.5±0.2 4.2±0.2 2.7±0.2 7.5±0.2 16.7±0.3 14.0±0.5 • Low collector to emitter saturation voltage VCE(sat) • High-speed switching • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one screw 4.2±0.2 φ 3.1±0.1 1.3±0.2 1.4±0.1 Solder Dip (4.0) ■ Features 0.7±0.1 For power amplification, power switching and low-voltage switching Complementary to 2SB0948A (2SB948A) 10.0±0.2 0.5+0.2 –0.1 0.8±0.1 2.54±0.3 5.08±0.5 ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 5 V Peak collector current ICP 20 A Collector current IC 10 A PC 40 W Collector power TC = 25°C dissipation Ta = 25°C 1: Base 2: Collector 3: Emitter TO-220F-A1 Package 1 2 3 2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics TC = 25°C Parameter Symbol Conditions ICBO VCB = 50 V, IE = 0 Emitter cutoff current IEBO VEB = 5 V, IC = 0 Collector to emitter voltage VCEO IC = 10 mA, IB = 0 hFE1 Collector cutoff current Min Typ Max Unit 50 µA 50 µA 40 V VCE = 2 V, IC = 0.1 A 45 hFE2 * VCE = 2 V, IC = 3 A 90 Collector to emitter saturation voltage VCE(sat) IC = 10 A, IB = 0.33 A 0.6 V Base to emitter saturation voltage VBE(sat) IC = 10 A, IB = 0.33 A 1.5 V Forward current transfer ratio 260 VCE = 10 V, IC = 0.5 A, f = 10 MHz 120 MHz Cob VCB = 10 V, IE = 0, f = 1 MHz 200 pF Turn-on time ton IC = 3 A, IB1 = 0.1 A, IB2 = − 0.1 A 0.3 µs Storage time tstg VCC = 20 V 0.4 µs Fall time tf 0.1 µs Transition frequency fT Collector output capacitance Note) *: Rank classification Rank Q P hFE2 90 to 180 130 to 260 Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the rank classification. Note) The part number in the parenthesis shows conventional part number. Publication date: June 2002 SJD00195BED 1 2SD1445A 70 60 TC = 25°C 90 mA 80 mA 8 50 (1) 40 VCE(sat) IC IB = 100 mA Collector current IC (A) Collector power dissipation PC (W) IC VCE 10 (1) TC = Ta (2) With a 100 × 100 × 2 mm Al heat sink (3) Without heat sink (PC = 2.0 W) Collector to emitter saturation voltage VCE(sat) (V) PC Ta 80 30 20 70 mA 60 mA 50 mA 6 40 mA 4 30 mA 20 mA 2 10 mA (2) 10 (3) 0 20 40 60 0 80 100 120 140 160 0 1 4 6 hFE IC 3 TC = 100°C 1 25°C 0.3 −25°C 0.1 0.03 0.01 0.1 0.3 1 3 10 1 000 VCE = 10 V f = 10 MHz TC = 25°C 1 000 25°C 1 −25°C TC = 100°C 0.3 0.1 0.03 0.3 1 3 10 300 300 TC = 100°C 25°C 100 −25°C 30 10 3 3 10 30 3 1 0.3 ton tstg 0.1 tf Non repetitive pulse TC = 25°C 30 ICP 0.03 10 t = 10 ms IC DC t=1s 3 1 0.3 0.1 0.03 0 1 2 3 4 Collector current IC (A) 5 0.01 30 10 3 1 1 3 10 30 100 300 1 000 Collector to emitter voltage VCE (V) SJD00195BED 0.1 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) Area of safe operation (ASO) Collector current IC (A) 10 1 100 Pulsed tW = 1 ms Duty cycle = 1% IC / IB = 30 (IB1 = −IB2) VCC = 30 V TC = 25°C 30 0.3 Collector current IC (A) ton , tstg , tf IC 100 100 0.3 1 0.1 30 Transition frequency fT (MHz) 3 30 Collector current IC (A) fT I C VCE = 10 V IC / IB = 20 0.01 5 VBE(sat) IC Collector current IC (A) Switching time ton ,tstg ,tf (µs) 3 Collector to emitter voltage VCE (V) 10 0.01 0.1 2 2 Ambient temperature Ta (°C) Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 0 IC / IB = 20 10 10 2SD1445A Rth(t) t Thermal resistance Rth(t) (°C/W) 103 (1)Without heat sink (2)With a 100 × 100 × 2 mm Al heat sink 102 (1) (2) 10 1 10−1 10−2 10−4 10−3 10−2 10−1 1 10 102 103 104 Time t (s) SJD00195BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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