Low VCE(sat) transistor (strobe flash) 2SD2118 zDimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1412. 2SD2118 zStructure Epitaxial planar type NPN silicon transistor ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter ∗ Denotes hFE zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V IC 5 A(DC) ICP 10 A(Pulse) Collector current Collector power dissipation 2SD2118 PC ∗1 1 W 10 W(Tc=25°C) Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗1 Single pulse Pw=10ms zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO 50 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 20 − − V IC=1mA Emitter-base breakdown voltage BVEBO 6 − − V IE=50µA ICBO − − 0.5 µA VCB=40V Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage IEBO − − 0.5 µA VEB=5V VCE(sat) − 0.3 1.0 V IC/IB=4A/0.1A ∗ VCE=2V, IC=0.5A ∗ hFE 120 − 390 − Transition frequency fT − 150 − MHz Output capacitance Cob − 35 − pF DC current transfer ratio Conditions VCE=6V, IE=−50mA, f=100MHz VCE=20V, IE=0A, f=1MHz ∗ Measured using pulse current. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/3 2009.11 - Rev.C 2SD2118 Data Sheet zPackaging specifications and hFE Package Taping TL Code Type hFE 2SD2118 QR Basic ordering unit (pieces) 2500 hFE values are classified as follows : Item Q R hFE 120 to 270 180 to 390 zElectrical characteristic curves Ta=100°C 25°C −25°C 0.2 0.1 0.05 0.02 0.01 5m 2m 1m 0 4 5mA 1 0.2 0.4 0.6 0.8 1.0 1.2 0 0 1.4 1000 VCE=5V 500 200 2V 100 1V 50 20 0.4 0.8 1.2 IB=0mA 1.6 2.0 5000 Fig.3 DC current gain vs. collector current ( Ι ) VCE=2V 2000 DC CURRENT GAIN : hFE 200 100 50 20 10 1000 500 Ta=100°C 25°C −25°C 200 100 50 20 10 5 1m 2m 5m 0.010.02 0.05 0.10.2 0.5 1 2 5 1m 2m 5m0.010.02 0.050.10.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) lC/lB=10 1 0.5 Ta=100°C 25°C −25°C 0.2 0.1 0.05 0.02 0.01 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) Fig.7 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2 0.5 0.2 0.1 0.05 IC/IB=50 0.02 40 30 10 0.01 2m 5m0.010.02 0.05 0.1 0.2 0.5 1 lC/lB=30 0.5 Ta=100°C 25°C −25°C 0.1 0.05 0.02 0.01 2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) Fig.8 Collector-emitter saturation voltage vs. collector current ( ΙΙΙ ) 2/3 2 5 10 COLLECTOR CURRENT : IC (A) 1 0.2 Ta=25°C 1 Fig.5 DC current gain vs. collector current ( ΙΙΙ ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2 5 10 2 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ΙΙ ) 5 10 COLLECTOR CURRENT : IC (A) Fig.2 Grounded emitter output characteristics VCE=1V Ta=100°C 25°C −25°C 5 1m 2m 5m 0.010.02 0.050.1 0.2 0.5 1 2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 2000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta=25°C 2000 10 5000 DC CURRENT GAIN : hFE 35mA 2 Fig.1 Grounded emitter propagation characteristics 500 40mA 3 BASE TO EMITTER VOLTAGE : VBE (V) 1000 10mA 5000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1 0.5 Ta=25°C 30mA 25mA 20mA 15mA 5 10 Fig.6 Collector-emitter saturation voltage vs. collector current ( Ι ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2 50mA 45mA DC CURRENT GAIN : hFE 5 VCE=2V COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 10 5 2 lC/lB=40 1 0.5 0.2 Ta=100°C 25°C −25°C 0.1 0.05 0.02 0.01 2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) Fig.9 Collector-emitter saturation voltage vs. collector current (IV) 2009.11 - Rev.C 2 1000 lC/lB=50 1 0.5 Ta=100°C 25°C −25°C 0.2 0.1 0.05 0.02 0.01 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) Fig.10 Collector-emitter saturation voltage vs. collector current (V) 10 5 2 1 −1m −2m −5m−10m−20m −50m−0.1 −0.2 −0.5 −1 EMITTER CURRENT : IE (A) Fig.11 Gain bandwidth product vs. emitter current Cib 100 50 Cob 20 10 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.12 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage s =1 0m ms C 00 D COLLECTOR CURRENT : IC (A) 20 200 =1 2 1 500m 50 Ta=25°C f=1MHz IC=0A IE=0A Ic max (Pulse) Ic max (Pulse) Pw 5 100 500 Pw 10 200 1000 Ta=25 (°C) Single pulse 50 20 Ta=25°C VCE=6V 500 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Data Sheet TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2SD2118 200m 100m 50m 20m 10m 0.2 0.5 1 2 5 10 20 50 100 200 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.13 Safe operating area (2SD2118) www.rohm.com c 2009 ROHM Co., Ltd. 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