DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2163 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING The 2SD2163 is a mold power transistor developed for lowspeed high-current switching. This transistor is ideal for direct driving from the IC output of devices such as pulse motor drivers and relay drivers of PC terminals. PACKAGE DRAWING (UNIT: mm) FEATURES • Mold package that does not require an insulating board or insulation bushing • High DC current gain due to Darlington connection hFE = 1,000 MIN. (@IC = 10 A) • Low collector saturation voltage: VCE(sat) = 1.5 V MAX. (@IC = 10 A) Electrode Connection ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) * Parameter Symbol Ratings Unit Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) VCBO VCEO VEBO IC(DC) 150 100 8.0 ±10 V V V A Collector current (pulse) IC(pulse)* ±20 A Base current (DC) Total power dissipation IB(DC) PT (Tc = 25°C) 1.0 30 A W Total power dissipation PT (Ta = 25°C) 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C PW ≤ 10 ms, duty cycle ≤ 50% ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Collector cutoff current ICBO DC current gain Collector saturation voltage Base saturation voltage Turn-on time hFE** VCE(sat)** VBE(sat)** ton Storage time tstg Fall time tf Conditions MIN. TYP. VCB = 100 V, IE = 0 VCE = 2.0 V, IC = 10 A IC = 10 A, IB = 25 mA IC = 10 A, IB = 25 mA IC = 10 A, IB1 = −IB2 = 25 mA RL = 5.0 Ω, VCC ≅ 50 V Refer to the test circuit. 1,000 6,000 1.1 1.8 1.0 MAX. Unit 10 µA 30,000 1.5 2.0 V V µs 5.0 µs 2.0 µs ** Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K J hFE 1,000 to 3,000 2,000 to 5,000 4,000 to 10,000 8,000 to 30,000 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16139EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SD2163 Collector Current IC (A) Total Power Dissipation PT (W) TYPICAL CHARACTERISTICS (Ta = 25°°C) Case Temperature TC (°C) IC Derating dT (%) Transient Thermal Resistance rth(j-c)(t) (°C/W) Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) 2 (with infinite heatsink) Pulse Width PW (s) DC Current Gain hFE Collector Current IC (A) Case Temperature TC (°C) Ta = 25°C (without heatsink) Data Sheet D16139EJ1V0DS Collector Current IC (A) Collector Saturation Voltage VCE(sat) (V) Base Saturation Voltage VBE(sat) (V) 2SD2163 Collector Current IC (A) SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform Data Sheet D16139EJ1V0DS 3 2SD2163 • The information in this document is current as of July, 2001. The information is subject to change without notice. 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