HITACHI 2SJ130

2SJ130(L), 2SJ130(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators
Outline
DPAK-1
4
4
1
1
2
3
2 3
D
1. Gate
2. Drain
3. Source
4. Drain
G
S
2SJ130(L), 2SJ130(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–300
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–1
A
Drain peak current
I D(pulse)
–2
A
Body to drain diode reverse drain current
I DR
–1
A
1
Channel dissipation
Pch*
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
–300
—
—
V
I D = –10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
–100
µA
VDS = –240 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
–2.0
—
–4.0
V
I D = –1 mA, VDS = –10 V
Static drain to source on state
resistance
RDS(on)
—
6.0
8.5
Ω
I D = –0.5 A, VGS = –10 V*1
Forward transfer admittance
|yfs|
0.25
0.4
—
S
I D = –0.5 A, VDS = –20 V*1
Input capacitance
Ciss
—
235
—
pF
VDS = –10 V, VGS = 0,
Output capacitance
Coss
—
65
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
16
—
pF
Turn-on delay time
t d(on)
—
10
—
ns
I D = –0.5 A, VGS = –10 V,
Rise time
tr
—
25
—
ns
RL = 60 Ω
Turn-off delay time
t d(off)
—
35
—
ns
Fall time
tf
—
45
—
ns
Body to drain diode forward
voltage
VDF
—
–0.9
—
V
I F = –1 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
200
—
ns
I F = –1 A, VGS = 0,
diF/dt = 50 A/µs
Note:
2
1. Pulse test
2SJ130(L), 2SJ130(S)
Power vs. Temperature Derating
Maximum Safe Operation Area
–5
20
10
50
100
150
–1.2
–0.8
–0.4
0
pe
ra
10
tio
m
s
(T
C
–0.2
–0.05
–5
Operation in this area
is limited by RDS (on)
(1
=
Sh
ot
)
25
°C
)
Ta = 25°C
–10 –20
–50 –100 –200 –500
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
–2.0
–10 V
–25°C
–6 V
Pulse Test
–5 V
VGS = –4 V
–10
–30
–40
–20
–50
Drain to Source Voltage VDS (V)
TC = 25°C
–1.6
Drain Current ID (A)
–1.6
–7 V
=
O
n
Typical Output Characteristics
–15 V
C
–0.5
Case Temperature TC (°C)
–2.0
PW
D
–1.0
–0.1
0
Drain Current ID (A)
10 µs
10
0
µs
1
m
s
–2
Drain Current ID (A)
Channel Dissipation Pch (W)
30
VDS = –20 V
Pulse Test
75°C
–1.2
–0.8
–0.4
0
–2
–6
–8
–10
–4
Gate to Source Voltage VGS (V)
3
–20
–16
–12
–8
–4
0
20
16
12
8
4
–2 A
Pulse Test
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
ID =
–1 A
–0.5 A
–4
–12
–16
–8
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Temperature
–1 A
ID = –2 A
160
–20
–0.5 A
0
80
120
40
Case Temperature TC (°C)
VGS = –10 V
Pulse Test
0
–40
50
20
10
5
2
1.0
Static Drain to Source on State
Resistance vs. Drain Current
Pulse Test
VGS = –10 V
–15 V
–25°C
Ta = 25°C
75°C
–0.05 –0.1 –0.2
–0.5 –1.0
Drain Current ID (A)
VDS = –20 V
Pulse Test
Forward Transfer Admittance
vs. Drain Current
0.5
–0.05 –0.1 –0.2
–0.5 –1.0 –2
Drain Current ID (A)
5
2
0.05
–0.02
0.1
0.2
0.5
1.0
Static Drain to Source on State Resistance
RDS (on) (Ω)
Forward Transfer Admittance yfs (S)
2SJ130(L), 2SJ130(S)
4
Drain to Source Saturation Voltage VDS (on) (V)
Static Drain to Source on State Resistance
RDS (on) (Ω)
–5
–2
Forward Transfer Admittance yfs (S)
5
2
1
0.5
0.2
0
–4
–8
–12
–16
–20
20
10 M 20 M
Forward Transfer Admittance
vs. Frequency
TC = 25°C
VDS = –20 V
ID = –0.5 A
0.5 M 1.0 M 2 M
5M
Frequency f (Hz)
–50 V
–100 V
VDD = –200 V
VDD = –50V
–100 V
–200 V
Dynamic Input Characteristics
VDS
VGS
8
12
16
Gate Charge Qg (nc)
ID = –1 A
4
Capacitance C (pF)
0
5
2SJ130(L), 2SJ130(S)
–5
–50
VGS = 0
f = 1 MHz
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
Crss
–20
–10
–30
–40
Drain to Source Voltage VDS (V)
tr
Switching Characteristics
tf
td (off)
td (on)
VGS = –10 V
.
PW = 2 µs
VDD =. 30 V
2
duty < 1%
1
–0.05 –0.1 –0.2
–0.5 –1.0 –2
Drain Current ID (A)
5
10
20
50
100
1
10
100
1,000
Switching Time t (ns)
0.1
0
–100
–200
–300
–400
–500
0
0.05
0.2 M
RDrain to Source VDS (V)
Gate to Source Voltage VGS (V)
2SJ130(L), 2SJ130(S)
Reverse Drain Current vs.
Source To Drain Voltage
Reverse Dratin Current IDR (A)
–2.0
VGS = 0
Pulse Test
–1.6
–1.2
–0.8
–0.4
–5 V, –10 V
VGS = 0, 10 V
0
Normalized Transient Thermal Impedance γS (t)
0
–2.0
–0.4
–0.8
–1.2
–1.6
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
TC = 25°C
1.0
D=1
0.5
0.3
0.2
θch–c (t) = γS (t) · θch–c
θch–c = 6.25°C/W, TC = 25°C
0.1
0.1
0.05
PDM
0.02
0.03
0.01 Pulse
hot
1S
0.01
10 µ
T
100 µ
1m
10 m
Pulse Width PW (s)
100 m
PW
D = PW
T
1
10
Waveforms
Switching Time Test Circuit
Vin
Vin Monitor
10%
Vout Monitor
90%
D.U.T
RL
50 Ω
Vin
–10 V
6
VDD
.
=. –30 V
90%
90%
Vout
10%
td (on)
tr
10%
td (off)
tf
2.3 ± 0.2
0.55 ± 0.1
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
1.7 ± 0.5
Unit: mm
2.29 ± 0.5
16.2 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
3.1 ± 0.5
1.2 ± 0.3
2.29 ± 0.5
0.55 ± 0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
DPAK (L)-(1)
—
Conforms
0.42 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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