Silicon MOS FETs (Small Signal) 2SK1374 Silicon N-Channel MOS FET For switching unit: mm 2.1±0.1 ■ Features 0.425 1.25±0.1 0.425 0.3–0 0.65 1.3±0.1 1 0.65 2.0±0.2 +0.1 ● High-speed switching ● Wide frequency band ● Incorporating a built-in gate protection-diode ● Allowing 2.5V drive 3 2 V Gate to Source voltage VGSO 10 V Drain current ID 50 mA Max drain current IDP 100 mA Allowable power dissipation PD 150 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C +0.1 50 0.15–0.05 Symbol 0 to 0.1 Unit VDS 0.7±0.1 Parameter 0.9±0.1 Ratings Drain to Source voltage 0.2 ■ Absolute Maximum Ratings (Ta = 25°C) 1: Gate 2: Source 3: Drain 0.2±0.1 EIAJ: SC-70 S-Mini Type Package (3-pin) Marking Symbol: 4V ■ Electrical Characteristics (Ta = 25°C) Parameter Symbol Conditions max Unit IDSS VDS = 20V, VGS = 0 1 µA Gate to Source leakage current IGSS VGS = 10V, VDS = 0 1 µA Drain to Source breakdown voltage VDSS ID = 10µA, VGS = 0 50 100 Gate threshold voltage Vth ID = 100µA, VDS = 5V 0.5 0.8 1.1 27 50 Drain to Source ON-resistance RDS(on) Forward transfer admittance | Yfs | Output capacitance (Common Source) *1 ID = 10mA, VGS = 2.5V ID = 10mA, VDS = 5V, f = 1kHz Coss VDS = 5V, VGS = 0, f = 1MHz Reverse transfer capacitance (Common Source) Crss 20 V V Ω 39 mS 4.5 pF 4.1 pF 1.2 pF Turn-on time ton*2 VDD = 5V, VGS = 0 to 2.5V, RL = 470Ω 0.2 µs Turn-off time *2 VDD = 5V, VGS = 2.5 to 0V, RL = 470Ω 0.2 µs toff Pulse measurement ton, toff measurement circuit Vout VGS = 2.5V 50Ω 470Ω 100µF *2 typ Drain to Source cut-off current Input capacitance (Common Source) Ciss *1 min 90% 10% Vin VDD = 5V Vout 10% 90% ton toff 1 Silicon MOS FETs (Small Signal) 2SK1374 PD Ta ID VDS 60 Ta=25˚C 200 40 160 120 80 32 VGS=1.8V 24 1.6V 16 40 8 0 0 1.4V 1.2V 1.0V 0 20 40 60 80 100 120 140 160 2 8 10 8 6 Coss 4 Ta=–25˚C 80 25˚C 75˚C 60 40 Ciss 2 20 Crss 0 0 100 300 1000 VIN IO VO=5V Ta=25˚C 30 10 3 1 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 20 10 0 1 100 0 1 2 3 2 3 4 5 6 Gate to source voltage VGS (V) RDS(on) VGS 100 30 30 12 Drain to source ON-resistance RDS(on) (Ω) 10 100 Input voltage VIN (V) 6 VDS=5V 10 40 ID VGS Drain to source voltage VDS (V) 2 4 120 Drain current ID (mA) Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) Ciss, Coss, Crss VDS 3 50 Drain to source voltage VDS (V) 12 1 VDS=5V f=1kHz Ta=25˚C 0 0 Ambient temperature Ta (˚C) Forward transfer admittance |Yfs| (mS) 48 Drain current ID (mA) Allowable power dissipation PD (mW) 240 | Yfs | VGS 4 5 6 Gate to source voltage VGS (V) 120 ID=10mA 100 80 60 Ta=75˚C 40 25˚C –25˚C 20 0 0 1 2 3 4 5 6 Gate to source voltage VGS (V)