Silicon Junction FETs (Small Signal) 2SK1860 Silicon N-Channel Junction FET Unit: mm For impedance conversion in low frequency For electret capacitor microphone +0.10 0.40 –0.05 +0.02 2.1±0.1 0.12 –0.01 2 2.20±0.15 1 5˚ 1.5±0.2 • High mutual conductance gm • Low noise voltage of NV 5.8±0.2 3 ■ Features ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Drain-source voltage (Gate open) VDSO 20 V Drain-gate voltage (Souse open) VDGO 20 V Drain-source current (Gate open) IDSO 2 mA Drain-gate current (Souse open) IDGO 2 mA Gate-source cutoff current (Drain open) IGSO 2 mA (0.95) (0.5) 1.9±0.1 2.9±0.2 10˚ Power dissipation PD 200 mW Operating ambient temperature Topr −20 to +80 °C Storage temperature Tstg −55 to +150 °C 0.7±0.1 Parameter (0.95) 1: Drain 2: Source 3: Gate Minit3-F1 Package Marking Symbol: 1H ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min ID Typ Max Unit VDS = 4.5 V, CO = 10 pF， RD = 2.2 kΩ ± 1% 100 600 µA Drain-sourse cutoff current (G-S short) IDSS VDS = 4.5 V, VGS = 0 95 480 µA Mutual conductance gm VD = 4.5 V, VGS = 0，f = 1 kHz 700 Noise voltage NV VD = 4.5 V, RD = 2.2 kΩ ± 1% CO = 10 pF, A-curve Voltage gain Gv1 VD = 4.5 V, RD = 2.2 kΩ ± 1% CO = 10 pF, eG = 10 mV，f = 1 kHz −3 2 dB Gv2 VD = 12 V, RD = 2.2 kΩ ± 1% CO = 10 pF, eG = 10 mV，f = 1 kHz 0 3.3 dB Gv3 VD = 1.5 V, RD = 2.2 kΩ ± 1% CO = 10 pF, eG = 10 mV，f = 1 kHz −4.5 − 0.3 dB Drain current ∆Gv · f* µS 1 600 4 VD = 4.5 V, RD = 2.2 kΩ ± 1% 0 µV 1.5 dB CO = 10 pF, eG = 10 mV，f = 1 kHz to 70 Hz Voltage gain difference ∆Gv2 − Gv1 0 3.5 dB ∆Gv1 − Gv3 0 3.5 dB Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. * : ∆Gv · f is assured for AQL0.065%. (the measurment method is used by source-grounded circuit.) Publication date: August 2003 SJF00039AED 1 2SK1860 ID VDS 0.45 VGS = 0 V 0.40 0.30 Drain current ID (mA) 0.35 − 0.05 V 0.25 0.20 − 0.1 V 0.15 − 0.15 V 0.10 Ta = −25°C 0.35 0.30 0.25 25°C 0.20 0.15 0.10 − 0.2 V 0.05 85°C 0.05 0 0 2 4 6 8 10 12 Drain-source voltage VDS (V) 0 − 0.6 − 0.5 − 0.4 − 0.3 − 0.2 − 0.1 Gate-source voltage VGS (V) Yfs ID Forward transfer admittance Yfs (mS) 2.0 VDS = 10 V Ta = 25°C 1.5 1.0 0.5 0 0 0.1 0.2 0.3 0.4 Drain current ID (mA) 2 Yfs VGS 2.0 VDS = 10 V 0.40 Drain current ID (mA) ID VGS 0.50 Ta = 25°C Forward transfer admittance Yfs (mS) 0.45 SJF00039AED 0 1.8 VDS = 10 V Ta = 25°C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 −2.5 −2.0 −1.5 −1.0 − 0.5 Gate-source voltage VGS (V) 0 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL