2SK2715 Transistors Small switching (500V, 2A) 2SK2715 !External dimensions (Units : mm) 6.5±0.2 5.1 +0.2 −0.1 C0.5 9.5±0.5 2.5 1.5 0.65±0.1 0.75 2.3 +0.2 −0.1 0.5±0.1 0.9 5.5 +0.3 −0.1 1.5±0.3 !Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. 0.9 0.5±0.1 2.3±0.2 2.3±0.2 !Structure Silicon N-channel MOSFET (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 1.0±0.2 (1) Gate (2) Drain (3) Source !Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 V ID IDP∗ 2 A Parameter Drain current Reverse drain current Continuous Pulsed Continuous Pulsed Total power dissipation (Tc=25°C) 6 A IDR IDRP∗ 2 A 6 A PD 20 W Channel temperature Tch 150 °C Storage temperature Tstg −55~+150 °C ∗Pw≤10µs, Duty cycle≤1% !Packaging specifications Package Code Type Basic ordering unit (pieces) Taping TL 2500 2SK2715 1/4 2SK2715 Transistors !Electrical characteristics (Ta=25°C) Parameter Min. Typ. Max. Unit IGSS − − ±100 nA VGS=±30V, VDS=0V V(BR)DSS 500 − − V ID=1mA, VGS=0V Symbol Gate-source leakage Drain-source breakdown voltage Test Conditions IDSS − − 100 µA VDS=500V, VGS=0V Gate threshold voltage VGS(th) 2.0 − 4.0 V VDS=10V, ID=1mA Static drain-source on-state resistance RDS(on) − 3.0 4.0 Ω ID=1A, VGS=10V Forward transfer admittance | Yfs | 0.6 1.5 − S ID=1A, VDS=10V Input capacitance Ciss − 280 − pF VDS=10V Output capacitance Coss − 58 − pF VGS=0V Zero gate voltage drain current Reverse transfer capacitance Crss − 23 − pF f=1MHz Turn-on delay time td(on) − 10 − ns ID=1A, VDD 150V tr − 12 − ns VGS=10V td(off) − 30 − ns RL=150Ω Fall time tf − 63 − ns RG=10Ω Reverse recovery time trr − 410 − ns IDR=2A, VGS=0V Reverse recovery charge Qrr − 1.7 − µC di/dt=100A/µs Rise time Turn-off delay time !Electrical characteristic curves 10 m s 0.2 0.1 0.05 0.02 Tc=25°C Single pulse 0.01 1 2 5 10 20 1.6 1.4 1.2 0.8 0.6 0.4 4.5V 0.2 4V 0 0 50 100 200 500 1000 5.6 4.8 4.0 3.2 2.4 1.6 0.8 0 25 50 75 100 125 150 CHANNEL TEMPERATURE : Tch (°C) Fig.4 Gate threshold voltage vs. channel temperature 2 3 4 5 6 7 8 50 9 0.5 0.2 1 2 3 4 5 6 7 8 GATE-SOURCE VOLTAGE : VGS (V) Fig.3 Typical transfer characteristics 8 VGS=4V Pulsed 10 Ta=125°C 75°C 25°C 2 75°C 125°C 1 0.05 0 10 20 5 25°C 2 0.1 Fig.2 Typical output characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (W) GATE THRESHOLD VOLTAGE : VGS(th) (V) VDS=10V lD=1mA 1 VDS=10V Pulsed Ta=−25°C DRAIN-SOURCE VOLTAGE : VDS (V) Fig.1 Maximum safe operating area 6.4 5V 1.0 DRAIN-SOURCE VOLTAGE : VDS (V) 0 −50 −25 5 6V DRAIN CURRENT : ID (A) t S in D n yR 2 tio d b a er ite 1 Op lim is 0.5 10 Ta=25°C Pulsed VGS=10V 1.8 ) n (o DRAIN CURRENT : ID (A) ar s 0µ s 10 1m s n m tio 00 ra =1 pe PW C O D DRAIN CURRENT : ID (A) 2.0 ea s hi 5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 10 −25°C 1 0.5 0.01 0.02 0.05 0.1 0.2 0.5 1 2 DRAIN CURRENT : I D (A) Fig.5 Static drain-source on-state resistance vs. drain current 5 Ta=25°C Pulsed 7 6 5 4 ID=2A 3 1A 2 1 0 5 10 15 20 25 30 GATE-SOURCE VOLTAGE : VGS (V) Fig.6 Static drain-source on-state resistance vs. gate-source voltage 2/4 2SK2715 10 8 6 ID=2A 4 1A 2 0 −50 −25 0 25 50 75 100 125 150 5 VDS=10V Pulsed 2 −25°C 25°C 75°C Ta=125°C 1 0.5 0.2 0.1 0.05 0.02 0.01 0.02 0.05 0.1 0.2 CHANNEL TEMPERATURE : Tch (°C) 1 0.5 0.2 0.1 0.5 1.0 Ciss 350 14 VDD=100V 250V 400V 300 250 VGS 8 150 6 VDD=400V 250V 100V 100 50 0 0 12 10 200 4 8 12 16 20 4 2 24 28 2 5 10 20 50 100 200 0 32 TOTAL GATE CHARGE : Qg (nC) Fig.13 Dynamic input characteristics (See Figure 18 for measurement circuit) 0.5 1.0 1.5 Ta=25°C VDD=150V VGS=10V RG=10Ω Pulsed 200 100 tf 50 td(off) 20 tr 5 0.1 5001000 td(on) 0.2 0.5 1 2 5 10 20 DRAIN CURRENT : ID (A) Fig.11 Typical capacitance vs. drain-source voltage Fig.12 Switching characteristics (See Figures 16 and 17 for the measurement circuit and resultant waveforms) 5000 GATE-SOURCE VOLTAGE : VGS (V) VDS 0.1 10 DRAIN-SOURCE VOLTAGE : VDS (V) REVERSE RECOVERY TIME : trr (ns) DRAIN-SOURCE VOLTAGE : VDS (V) 400 Crss 10 2 1 1.5 20 Ta=25°C ID=5A 18 Pulsed 16 0.2 500 Coss 20 Fig.10 Reverse drain current vs. source-drain voltage ( ΙΙ ) 450 0.5 1000 100 50 Ta=125°C 75°C 25°C −25°C Fig.9 Reverse drain current vs. source-drain voltage ( Ι ) 200 SOURCE-DRAIN VOLTAGE : VSD (V) 500 1 SOURCE-DRAIN VOLTAGE : VSD (V) 5 0.05 0 2 VGS=0V Pulsed 0.05 0 5 2 Ta=25°C VGS=0V f=1MHz Pulsed 500 CAPACITANCE : C (pF) REVERSE DRAIN CURRENT : IDR (A) 1000 VGS=0V 10V 1 Fig.8 Forward transfer admittance vs. drain current Ta=25°C Pulsed 2 0.5 5 DRAIN CURRENT : I D (A) Fig.7 Static drain-source on-state resistance vs. channel temperature 5 REVERSE DRAIN CURRENT : IDR (A) VGS=10V Pulsed SWITCHING TIME : t (ns) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 12 FORWARD TRANSFER ADMITTANCE : |YfS| (S) Transistors Ta=25°C di/dt=100A/µs VGS=0V 2000 Pulsed 1000 500 200 100 50 0.1 0.2 0.5 1 2 5 10 REVERSE DRAIN CURRENT : IDR (A) Fig.14 Reverse recovery time vs. reverse drain current 3/4 2SK2715 Transistors NORMALIZED TRANSIENT : r (t) THERMAL RESISTANCE 10 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 Tc=25°C θth(ch-c) (t)=r(t) · θth(ch-c) θth(ch-c)=6.25°C/W 0.01 0.01 Single pulse 0.001 10µ PW D=PW T T 100µ 1m 10m 100m 1 10 PULSE WIDTH : PW (s) Fig.15 Normalized transient thermal resistance vs. pulse width !Switching characteristics measurement circuit Pulse width VGS ID D.U.T. RG VDS RL VGS 90% 50% 10% 50% 10% VDS 10% VDD 90% 90% td(on) ton Fig.16 Switching time measurement circuit IG=2mA RG VGS ID D.U.T. tr td(off) tf toff Fig.17 witching time waveforms VDS RL VDD Fig.18 Gate charge measurement circuit 4/4