Data Sheet 4V Drive Nch MOSFET RSD050N06 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) CPT3 6.5 5.1 (SC-63) <SOT-428> 2.3 2.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 3) Parallel use is easy. 9.5 1.5 0.5 0.75 (1) 0.8Min. 0.65 0.9 2.3 (2) (3) 2.3 0.5 1.0 Applications Switching Packaging specifications Type Package Code Basic ordering unit (pieces) Inner circuit CPT3 TL 2500 ∗1 ∗2 (1) Gate (2) Drain (3) Source Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Continuous Pulsed Continuous Pulsed *1 ESD Protection Diode *2 Body Diode Symbol Limits Unit VDSS 60 20 5.0 15 5.0 15 V V A A A A VGSS ID IDP *1 IS *1 Power dissipation ISP PD 15 W Channel temperature Range of storage temperature Tch Tstg 150 55 to +150 °C °C Symbol Rth (ch-c) * Limits 8.33 Unit °C / W *2 (1) (2) (3) *1 Pw10s, Duty cycle1% *2 T c=25°C Thermal resistance Parameter Channel to Case * T c=25C www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/6 2014.02 - Rev.B DataSheet RSD050N06 Electrical characteristics (Ta=25°C) Parameter Gate-source leakage Symbol IGSS Drain-source breakdown voltage V(BR)DSS Min. Typ. Max. Unit - - 10 A VGS=20V, VDS=0V 60 - - V ID=1mA, VGS=0V Conditions IDSS - - 1 A VDS=60V, VGS=0V Gate threshold voltage VGS (th) 1.0 - 3.0 V VDS=10V, ID=1mA Static drain-source on-state resistance - 78 109 ID=5.0A, VGS=10V RDS (on)* Zero gate voltage drain current - 94 131 m ID=5.0A, VGS=4.5V - 100 140 ID=5.0A, VGS=4.0V l Yfs l* 3.5 - - S ID=5.0A, VDS=10V Input capacitance Ciss - 290 - pF VDS=10V Output capacitance Coss - 90 - pF VGS=0V Reverse transfer capacitance Crss - 35 - pF f=1MHz Turn-on delay time td(on) * - 8 - ns ID=2.5A, VDD 30V Rise time tr * td(off) * - 17 - ns VGS=10V - 26 - ns RL=12 tf * - 8 - ns RG=10 Total gate charge Qg * - 8.0 - nC VDD Gate-source charge Gate-drain charge Qgs * Qgd * - 1.4 1.4 - nC nC ID=5.0A VGS=10V Forward transfer admittance Turn-off delay time Fall time 30V *Pulsed Body diode characteristics (Source-Drain) (Ta=25°C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. - - 1.2 Unit Conditions V Is=5.0A, VGS=0V *Pulsed www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 2/6 2014.02 - Rev.B DataSheet RSD050N06 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ) 15.0 15.0 Ta=25°C pulsed Ta=25°C pulsed 12.5 12.5 VGS=10.0V VGS=4.5V VGS=4.5V 10.0 Drain Current : ID [A] Drain Current : ID [A] VGS=10.0V VGS=4.0V VGS=3.5V 7.5 5.0 2.5 10.0 VGS=4.0V 7.5 VGS=3.5V 5.0 2.5 0.0 VGS=3.0V 0.0 0 0.2 0.4 0.6 0.8 1 0 2 Drain-Source Voltage : VDS [V] 8 10 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 1000 1000 VGS=10V pulsed Ta=25°C pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] 6 Drain-Source Voltage : VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current VGS=4.0V VGS=4.5V VGS=10V 100 10 0.01 0.1 1 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 1 0.01 10 Drain Current : ID [A] 0.1 1 10 Drain Current : ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 1000 VGS=4.0V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] 4 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 1 0.01 0.1 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 1 0.01 10 Drain Current : ID [A] www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 100 0.1 1 10 Drain Current : ID [A] 3/6 2014.02 - Rev.B DataSheet RSD050N06 Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics 10 10 VDS=10V pulsed VDS=10V pulsed 1 0.1 Drain Currnt : ID [A] Forward Transfer Admittance Yfs [S] 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01 0.001 0.0001 0.01 0.01 0.00001 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 10 1000 VGS=0V pulsed Ta=25°C pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] 1 Source Current : Is [A] 3.5 Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fif.9 Source Current vs. Source-Drain Voltage Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.001 0.0001 ID=2.5A 500 ID=5.0A 0 0.0 0.5 1.0 0 2 4 6 8 10 12 14 16 18 20 Gate-Source Voltage : VGS [V] Source-Drain Voltage : VSD [V] Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics 1000 12 VDD≒30V VGS=10V RG=10Ω Ta=25°C Pulsed 100 td(off) td(on) 10 Ta=25°C VDD=30V ID=5A Pulsed 10 Gate-Source Voltage : VGS [V] tf Switching Time : t [ns] 3.0 Gate-Source Voltage : VGS [V] Drain Current : ID [A] 8 6 4 2 tr 1 0 0.01 0.1 1 0 10 4 6 8 10 Total Gate Charge : Qg [nC] Drain Current : ID [A] www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 2 4/6 2014.02 - Rev.B DataSheet RSD050N06 Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area 1000 100 Ta=25°C f=1MHz VGS=0V Operation in this area is limited by RDS(on) （ VGS = 10V ） Drain Current : ID [ A ] Capacitance : C [pF] 10 Ciss 100 Coss PW = 100μs 1 PW = 1ms PW = 10ms 0.1 DC Operation Tc=25°C Single Pulse Crss 10 0.01 0.01 0.1 1 10 100 0.1 1 10 100 Drain-Source Voltage : VDS [ V ] Drain-Source Voltage : VDS [V] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width Normalized Transient Thermal Resistance : r（t） 10 Tc=25°C Single Pulse 1 Rth(ch-c)=8.33°C/W Rth(ch-c)(t)=r(t)×Rth(ch-c) 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 5/6 2014.02 - Rev.B DataSheet RSD050N06 Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2 Switching Waveforms VG VGS ID VDS Qg RL IG(Const.) VGS D.U.T. Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. Fig.2-2 Gate Charge Waveform 6/6 2014.02 - Rev.B