DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113B SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low gate charge QG = 7.9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) • Gate voltage rating : ±30 V • Avalanche capability ratings <R> ORDERING INFORMATION PART NUMBER 2SK3113B-S15-AY LEAD PLATING Note 2SK3113B(1)-S27-AY Note 2SK3113B-ZK-E1-AY Note 2SK3113B-ZK-E2-AY Note Pure Sn (Tin) PACKING PACKAGE Tube 70 p/tube TO-251 (MP-3-a) typ. 0.39 g Tube 75 p/tube TO-251 (MP-3-b) typ. 0.34 g Tape 2500 p/reel TO-252 (MP-3ZK) typ. 0.27 g Note Pb-free (This product does not contain Pb in external electrode.) (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 600 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±2.0 A ID(pulse) ±8.0 A PT1 20 W PT2 1.0 W Tch 150 °C Tstg –55 to +150 °C Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Note2 Channel Temperature Storage Temperature Single Avalanche Current Note3 IAS 2.0 A Single Avalanche Energy Note3 EAS 2.7 mJ (TO-252) Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Mounted on glass epoxy board of 40 mm × 40 mm × 1.6 mm 3. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18061EJ3V0DS00 (3rd edition) Date Published June 2007 NS Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2006 2SK3113B ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V 100 μA Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±10 μA VGS(off) VDS = 10 V, ID = 1 mA 2.5 3.5 V | yfs | VDS = 10 V, ID = 1.0 A 0.5 RDS(on) VGS = 10 V, ID = 1.0 A 3.2 Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note 0.9 S Ω 4.4 Input Capacitance Ciss VDS = 10 V 290 pF Output Capacitance Coss VGS = 0 V 75 pF Reverse Transfer Capacitance Crss f = 1 MHz 7 pF Turn-on Delay Time td(on) VDD = 150 V, ID = 1.0 A 10.5 ns tr VGS = 10 V 4.8 ns td(off) RG = 10 Ω 15.8 ns tf RL = 10 Ω 10.5 ns Rise Time Turn-off Delay Time Fall Time Total Gate Charge QG VDD = 450 V 7.9 nC Gate to Source Charge QGS VGS = 10 V 2.7 nC QGD ID = 2.0 A 3.2 nC VF(S-D) IF = 2.0 A, VGS = 0 V 0.8 V Reverse Recovery Time trr IF = 2.0 A, VGS = 0 V 190 ns Reverse Recovery Charge Qrr di/dt = 50 A/μs 500 nC Gate to Drain Charge Body Diode Forward Voltage Note Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω D.U.T. L RL PG. 50 Ω VDD VGS = 20 → 0 V RG PG. VGS VGS Wave Form 0 90% ID VGS 0 ID Starting Tch τ = 1 μs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 Ω VDD 10% 0 10% Wave Form τ VDD PG. 90% BVDSS VDS ID 90% VDD ID IAS VGS 10% Data Sheet D18061EJ3V0DS td(on) tr ton td(off) tf toff 2SK3113B TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 40 100 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 80 60 40 20 35 30 25 20 15 10 5 0 0 0 20 40 60 80 100 120 140 160 Tch - Channel Temperature - °C 0 20 40 60 80 100 120 140 160 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 Tc = 25°C, Single pulse PW = 10 μs 100 μs 10 ID(DC) 1 ms 1 10 ms RDS(on) Limited (at VGS = 10 V) 0.1 Power Dissipation Limited 0.01 1 10 100 1000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A ID(pulse) Rth(ch-A) = 125°C/W 100 Rth(ch-C) = 6.25°C/W 10 1 0.1 Single pulse 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width – s Data Sheet D18061EJ3V0DS 3 2SK3113B DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 5 100 Pulsed VGS = 10 V 4 3.5 3 10 ID - Drain Current - A ID - Drain Current - A 4.5 8V 2.5 2 1.5 1 Tch = 125°C 75°C 0.1 25°C 1 0.5 0.01 0 0 5 10 15 20 25 3 2.5 2 1.5 VDS = 10 V ID = 1 mA -50 0 50 100 VDS = 10 V Pulsed 25°C 125°C 0.1 75°C 0.01 0.01 150 7.0 6.0 5.0 ID = 2.0 A 1.0 A 2.0 5 10 15 1 10 20 25 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - Ω Pulsed 3.0 0.1 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 4.0 Tch = − 25°C 1 Tch - Channel Temperature - °C 8.0 30 10 | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V 20 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 0 RDS(on) - Drain to Source On-state Resistance - Ω 15 GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3.5 0 10 VGS - Gate to Source Voltage - V 4 1 5 VDS - Drain to Source Voltage - V 4.5 0.5 0 25 5 6.0 5.5 5.0 4.5 4.0 3.5 VGS = 10 V 3.0 20 V 2.5 Pulsed 2.0 0.01 0.1 1 ID - Drain Current - A VGS – Gate to Source Voltage - V 4 VDS = 10 V Pulsed −25°C Data Sheet D18061EJ3V0DS 10 2SK3113B SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 10 8 IF – Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ID = 2.0 A 6 1.0 A 4 2 VGS = 10 V Pulsed 0 -50 0 50 100 150 10 1 V GS = 10 V 0.1 0V Pulsed 0.01 0.0 Tch - Channel Temperature - °C 1.0 VF(S-D) – Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 1000 1000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 0.5 C iss 100 C oss 10 C rss VGS = 0 V f = 1 MHz 1 0.1 1 10 VDD = 150 V VGS = 10 V RG = 10 Ω 100 tf td(off) 10 td(on) tr 1 100 0.1 1 10 VDS - Drain to Source Voltage – V ID - Drain Current - A DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 600 VDS – Drain to Source Voltage - V trr – Reverse Recovery Time - ns di/dt = 50 A/μs VGS = 0 V 100 10 VDD = 450 V 300 V 150 V 500 9 8 VGS 400 7 6 300 5 4 200 VDS 3 2 100 10 1 ID = 2.0 A 0 0.1 1 10 ID - Drain Current - A 0 0 2 4 6 8 10 QG – Gate Chage - nC Data Sheet D18061EJ3V0DS 5 VGS – Gate to Source Voltage - V REVWESE RECOVERY TIME vs. DRAIN CURRENT 2SK3113B SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 120 10 IAS = 2.0 A 1.0 RG = 25 Ω VDD = 150 V VGS = 20 → 0 V Starting Tch = 25˚C 0.1 10 μ 6 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 EAS = 2.7 mJ 100 μ 1m L - Inductive Load - H 100 VDD = 150 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 2.0 A 80 60 40 20 10 m 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C Data Sheet D18061EJ3V0DS 2SK3113B <R> PACKAGE DRAWINGS (Unit: mm) 1) TO-251 (MP-3-a) 2) TO-251 (MP-3-b) 1.06 TYP. 2.3 ±0.1 0.5 ±0.1 6.6±0.2 4 0.5±0.1 3 1.14 MAX. 11.25 TYP. 2 0.76±0.12 1.04 TYP. 2.3 TYP. 2.3 TYP. 1.02 TYP. 2.3 TYP. 0.5±0.1 2.3 TYP. 0.5 ±0.1 0.76 ±0.1 1. Gate 2. Drain 3. Source 4. Fin (Drain) Drain 2.3±0.1 1.0 TYP. 6.5±0.2 5.1 TYP. 4.3 MIN. 0.5±0.1 Body Diode No Plating Gate 0.51 MIN. 0.8 1.14 MAX. 3 6.1±0.2 10.4 MAX. (9.8 TYP.) 4.0 MIN. 4 2 Gate Protection Diode Source No Plating 0 to 0.25 0.5±0.1 0.76±0.12 2.3 1.Gate 2.Drain 3.Source 4.Fin (Drain) EQUIVALENT CIRCUIT 3) TO-252 (MP-3ZK) 1 4.13 TYP. 1.14 MAX. 1 No Plating 9.3 TYP. 3 16.1 TYP. 2 1.8 ±0.2 1 6.1±0.2 6.1 ±0.2 4.0 MIN. 5.3 TYP. 2.3±0.1 4 1.1±0.13 Mold Area 0.7 TYP. 6.6 ±0.2 5.3 TYP. 4.3 MIN. 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1.0 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D18061EJ3V0DS 7 2SK3113B • The information in this document is current as of June, 2007. The information is subject to change without notice. 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