2SK3597-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Symbol V DS VDSX *5 ID Tc=25°C Ta=25°C Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Tc=25°C Ta=25°C Operating and storage temperature range Tch Tstg Foot Print Pattern Ratings 200 170 ±45 ±4.3 ** ±180 ±30 45 258.9 20 5 270 2.4 ** +150 -55 to +150 Unit V V A A A V A mJ kV/µs kV/µs W Equivalent circuit schematic D : Drain G : Gate S1 : Source S2 : Source °C °C ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) Ta=25°C *1 L=205µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch < =150°C *3 IF< = 200V *5 VGS=-30V = BVDSS, Tch < = 150°C *4 VDS < = -ID, -di/dt=50A/µs, Vcc < Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Symbol V(BR)DSS VGS(th) Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Min. Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=200V VGS=0V VDS=160V VGS=0V VGS=±30V VDS=0V ID=15A VGS=10V Typ. 200 3.0 5.0 25 250 100 66 Tch=25°C Tch=125°C ID=15A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=15A VGS=10V RGS=10 Ω V CC=100V ID=30A VGS=10V L=205µH Tch=25°C IF=30A VGS=0V Tch=25°C IF=30A VGS=0V -di/dt=100A/µs Tch=25°C Max. 10 50 12.5 25 1960 2940 260 390 18 27 20 30 17 26 53 80 19 29 51 76.5 15 22.5 16 24 45 1.10 1.65 0.19 1.4 Units V V µA nA mΩ S pF ns nC A V µs µC Thermalcharacteristics Item Symbol Test Conditions Rth(ch-c) channel to case Thermal resistance Rth(ch-a) channel to ambient Rth(ch-a) ** channel to ambient ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) www.fujielectric.co.jp/denshi/scd Min. Typ. Max. 0.463 87.0 52.0 Units °C/W °C/W 1 2SK3597-01 FUJI POWER MOSFET Characteristics 300 Allowable Power Dissipation PD=f(Tc) Allowable Power Dissipation PD=f(Tc) 5 Surface mounted on 2 1000mm ,t=1.6mm FR-4 PCB 250 2 (Drain pad area : 500mm ) 4 200 PD [W] PD [W] 3 150 2 100 1 50 0 0 0 25 50 75 100 125 150 0 25 50 Tc [°C] 800 75 100 125 150 Tc [°C] Typical Output Characteristics Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=48V ID=f(VDS):80µs Pulse test,Tch=25°C 120 20V 700 IAS=18A 100 10V 600 8V IAS=27A 80 7.5V IAS=45A ID [A] EAS [mJ] 500 400 7.0V 60 300 6.5V 40 200 6.0V 20 100 VGS=5.5V 0 0 0 25 50 75 100 125 0 150 2 4 6 8 10 12 VDS [V] starting Tch [°C] Typical Transfer Characteristic Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C 100 100 gfs [S] ID[A] 10 10 1 1 0.1 0 1 2 3 4 5 VGS[V] 6 7 8 9 10 0.1 0.1 1 10 100 ID [A] 2 2SK3597-01 FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=15A,VGS=10V Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs Pulse test, Tch=25°C 200 0.20 180 RDS(on) [ Ω ] 6.5V 160 7.0V 7.5V 8V 0.10 140 RDS(on) [ m Ω ] VGS= 6.0V 5.5V 0.15 10V 20V 120 100 max. 80 60 typ. 0.05 40 20 0.00 0 0 20 40 60 80 100 120 -50 -25 0 25 50 75 100 125 150 Tch [°C] ID [A] Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µ A Typical Gate Charge Characteristics VGS=f(Qg):ID=30A, Tch=25°C 7.0 14 6.5 6.0 12 5.5 max. 10 4.5 4.0 VGS [V] VGS(th) [V] 5.0 3.5 3.0 min. Vcc= 100V 8 6 2.5 2.0 4 1.5 1.0 2 0.5 0 0.0 -50 -25 0 25 50 75 100 125 0 150 10 20 30 Tch [°C] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 40 50 60 70 80 Qg [nC] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs Pulse test,Tch=25°C 1 100 Ciss 0 IF [A] 10 C [nF] 10 Coss 10 -1 1 Crss 10 -2 10 -1 10 0 10 VDS [V] 1 10 2 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VSD [V] 3 2SK3597-01 FUJI POWER MOSFET Typical Switching Characteristics vs. ID 10 3 t=f(ID):Vcc=48V, VGS=10V, RG=10Ω Thermal Resistance vs. Drain Pad area t=1.6mm FR-4 PCB 100 90 2 td(off) t [ns] 10 Rth(ch-a) [°C/W] tf td(on) 80 70 60 50 40 10 1 30 tr 20 10 10 0 0 10 -1 10 0 10 1 10 0 2 10 2 10 1 10 0 1000 2000 3000 4000 5000 2 Drain Pad Area [mm ] ID [A] Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=48V Avalanche Current I AV [A] Single Pulse 10 -1 -2 10 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 Zth(ch-c) [°C/W] tAV [sec] 10 1 10 0 10 -1 10 -2 10 -3 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ 4