2SK3707 Ordering number : EN7706A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3707 General-Purpose Switching Device Applications Features • • ON-resistance RDS(on)1=45mΩ (typ.) 4V drive • Input capacitance Ciss=2150pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) PW≤10μs, duty cycle≤1% 100 V ±20 V 20 A 80 A 2.0 W Allowable Power Dissipation PD 25 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 125 mJ 20 A Avalanche Current *2 Tc=25°C Note : *1 VDD=20V, L=500μH, IAV=20A (Fig.1) *2 L≤500μH, Single pulse Package Dimensions Product & Package Information unit : mm (typ) 7529-001 • Package : TO-220F-3SG • JEITA, JEDEC : SC-67 • Minimum Packing Quantity : 50 pcs./magazine Marking Electrical Connection 2 15.87 6.68 3.3 2.54 A 3.23 K3707 LOT No. 1 2.76 12.98 1.47 MAX DETAIL-A 0.8 1 2 3 FRAME EMC 2.54 2.54 3 (0.84) 0.5 ( 1.0) 15.8 2SK3707-1E 4.7 10.16 3.18 1 : Gate 2 : Drain 3 : Source SANYO : TO-220F-3SG http://semicon.sanyo.com/en/network 53012 TKIM TC-00002765/D1003QA TS IM TA-100958 No.7706-1/7 2SK3707 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max 100 V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=10V, ID=1mA 1.2 Forward Transfer Admittance | yfs | VDS=10V, ID=10A 11 RDS(on)1 ID=10A, VGS=10V 45 60 mΩ RDS(on)2 ID=10A, VGS=4V 56 80 mΩ Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance ID=1mA, VGS=0V VDS=100V, VGS=0V V Drain-to-Source Breakdown Voltage 1 μA ±10 μA 2.6 17 V S 2150 pF 160 pF Crss 110 pF Turn-ON Delay Time td(on) 19.5 ns Rise Time tr td(off) 30 ns 185 ns Turn-OFF Delay Time Fall Time VDS=20V, f=1MHz See Fig.2 tf Qg Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=50V, VGS=10V, ID=20A IS=20A, VGS=0V Fig.1 Avalanche Resistance Test Circuit nC 7.8 nC 9.8 nC 0.95 1.2 V VDD=50V VIN 10V 0V ≥50Ω RG ID=10A RL=5Ω VIN D 2SK3707 VDD 50Ω ns 44 Fig.2 Switching Time Test Circuit L 10V 0V 60 VOUT PW=10μs D.C.≤1% G 2SK3707 P.G 50Ω S Ordering Information Device 2SK3707-1E Package Shipping memo TO-220F-3SG 50pcs./magazine Pb Free No.7706-2/7 2SK3707 6V 4V 35 15 10 VGS=3V 1.0 1.5 2.0 2.5 3.0 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS 110 100 90 80 Tc=75°C 60 50 25°C 40 --25°C 30 20 10 3 2 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 2 10 = Tc 7 5 5°C --2 °C 75 3 2 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT06749 Drain Current, ID -- A SW Time -- ID 5 3 Tc= -=4V V GS 0V , 1 10A S= I D= , VG A 0 1 I D= 70 60 50 40 30 20 10 --25 0 25 50 75 100 125 150 IT06748 IF -- VSD VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0 0.3 0.6 0.9 1.2 1.5 IT06750 Ciss, Coss, Crss -- VDS f=1MHz Ciss Ciss, Coss, Crss -- pF 2 5 3 tr 1000 7 5 3 Coss 2 Crss td(on) 100 7 10 7 0.1 4.5 IT06746 3 tf 2 80 5 100 7 4.0 Diode Forward Voltage, VSD -- V VDD=50V VGS=10V td(off) 2 3.5 90 0.01 7 5 3 2 0.001 1.0 7 5 0.1 3.0 100 100 7 5 3 2 Forward Drain Current, IF -- A C 25° 2.5 Case Temperature, Tc -- °C 5 3 2.0 110 0 --50 10 VDS=10V 7 1.5 RDS(on) -- Tc IT06747 | yfs | -- ID 100 1.0 120 ID=10A 70 0.5 Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 120 0 IT06745 --25°C 0.5 Tc=7 5°C 25°C 0 Forward Transfer Admittance, | yfs | -- S 10 0 0 Switching Time, SW Time -- ns 15 5 5 0 20 5°C --25 °C 20 25 Tc= 7 25 30 25 °C 30 Drain Current, ID -- A 10 V Drain Current, ID -- A 35 ID -- VGS VDS=10V 75° C 40 8V Tc=25°C 2 25°C 5°C ID -- VDS 40 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 IT06751 5 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT06752 No.7706-3/7 2SK3707 VGS -- Qg 10 8 100 7 5 7 3 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 6 5 4 1 3 2 5 10 15 20 25 30 35 40 Total Gate Charge, Qg -- nC ID=20A DC 50 Tc=25°C Single pulse 2 3 5 7 1.0 Allowable Power Dissipation, PD -- W 1.0 0.5 2 3 5 7 10 2 3 5 7 100 2 IT16833 Drain-to-Source Voltage, VDS -- V PD -- Tc 30 1.5 op s ati on Operatuon in this area is limited by RDS(on). IT06753 2.0 1 10 0ms 0m s 0μ s 1m er 0.1 0.1 PD -- Ta 2.5 Allowable Power Dissipation, PD -- W 45 10 μs 10 3 2 2 0 IDP=80A(PW≤10μs) 10 7 5 1.0 7 5 3 0 ASO 2 VDS=50V ID=20A 25 20 15 10 5 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT06755 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT06756 No.7706-4/7 2SK3707 Magazine Specification 2SK3707-1E No.7706-5/7 2SK3707 Outline Drawing 2SK3707-1E Mass (g) Unit 1.8 mm * For reference No.7706-6/7 2SK3707 Note on usage : Since the 2SK3707 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. 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Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2012. Specifications and information herein are subject to change without notice. PS No.7706-7/7