2SK3796 Ordering number : EN8636A SANYO Semiconductors DATA SHEET 2SK3796 N-Channel Junctin Silicon FET Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Applications • Low-frequency general-purpose amplifier, impedance conversion, analog switches applications Features • • Small IGSS Small Ciss Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Symbol Gate-to-Drain Voltage VDSX VGDS Gate Current Drain Current Allowable Power Dissipation Conditions Ratings V IG 10 mA ID PD 10 mA 100 mW 150 °C --55 to +150 °C Tj Storage Temperature Tstg Package Dimensions Product & Package Information unit : mm (typ) 7013A-011 • Package : SMCP • JEITA, JEDEC : SC-75, SOT-416 • Minimum Packing Quantity : 3,000 pcs./reel 1.6 0.8 Packing Type: TL Marking 0.3 2SK3796-2-TL-E 2SK3796-3-TL-E 2SK3796-4-TL-E 3 K R A N K LOT No. 1 2 LOT No. 1.6 0.5 0.5 0.2 0.4 V --30 Junction Temperature 0.4 Unit 30 0 to 0.1 0.75 0.6 0.1 TL 0.1 MIN 1 : Source 2 : Drain 3 : Gate Electrical Connection SANYO : SMCP 3 1 2 http://semicon.sanyo.com/en/network 62712 TKIM/32207GB TIIM TC-00000609 No.8636-1/6 2SK3796 Electrical Characteristics at Ta=25°C Parameter Symbol Gate-to-Drain Breakdown Voltage V(BR)GDS IGSS VGS(off) Gate Cutoff Current Cutoff Voltage Drain Current Ratings Conditions min IG=--10μA, VDS=0V VGS=--20V, VDS=0V typ Unit max --30 V --1.0 VDS=10V, ID=1μA --0.18 --0.95 0.6* nA --2.2 V 6.0* mA VDS=10V, VGS=0V Forward Transfer Admittance IDSS | yfs | 6.5 mS Input Capacitance Ciss VDS=10V, VGS=0V, f=1MHz 4 pF Reverse Transfer Capacitance Crss VDS=10V, VGS=0V, f=1MHz 1.1 pF Static Drain-to-Source On-State Resistance RDS(on) VDS=10mV, VGS=10V 200 Ω VDS=10V, VGS=0V, f=1kHz 3.0 * : The 2SK3796 is classified by IDSS as follows : (unit : mA) Rank IDSS 2 0.6 to 1.5 3 1.2 to 3.0 4 2.5 to 6.0 Ordering Information Device 2SK3796-2-TL-E Package Shipping SMCP 3,000pcs./reel 2SK3796-3-TL-E SMCP 3,000pcs./reel 2SK3796-4-TL-E SMCP 3,000pcs./reel ID -- VDS 5.0 Pb Free ID -- VDS 5 4 3.0 VGS=0V 2.0 --0.1V Drain Current, ID -- mA 4.0 --0.2V --0.3V 1.0 VGS=0V 3 --0.1V 2 --0.2V --0.3V 1 --0.4V --0.4V 0 0 1.0 2.0 3.0 4.0 Drain-to-Source Voltage, VDS -- V 0 5.0 0 ID -- VGS 5 10 20 25 30 ITR00634 ID -- VGS 8 VDS=10V 15 Drain-to-Source Voltage, VDS -- V ITR00633 5 VDS=10V mA .0 =5 S S ID 2 mA Ta =-25 °C 4 2 3.0 75° A --1.50 --1.25 --1.00 --0.75 --0.50 --0.25 Gate-to-Source Voltage, VGS -- V 0 ITR00635 1 C °C 25 1.0m 0 3 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 Gate-to-Source Voltage, VGS -- V 0 0 ITR00636 No.8636-2/6 Drain Current, ID -- mA 4 6 Drain Current, ID -- mA Drain Current, ID -- mA memo 2SK3796 VGS(off) -- IDSS VDS=10V ID=1.0μA 3 2 --1.0 7 5 3 2 5 7 2 1.0 3 5 7 5 3 2 7 2 1.0 3 5 7 Drain Current, IDSS -- mA 1 S= 3 I DS 2 1.0 7 5 3 2 3 5 7 2 1.0 3 5 7 10 IGDL 3 10n D S G 3 ID DC DC 1n 3 100p 3 10p 3 ID=1mA 0 5 10 15 20 Output Capacitance, Crss -- pF 7 5 3 2 25 ITR00640 Crss -- VDS VGS=0V f=1MHz 7 10 3 IGDL -- VDS 10 2 2 ITR00638 Drain-to-Source Voltage, VDS -- V VGS=0V f=1MHz 3 Input Capacitance, Ciss -- pF A .0m ITR00639 Ciss -- VDS 5 3 5 1p 5 2 10 5.0m A .0m Drain Current, ID -- mA Gate-to-Drain Leak Current, IGDL -- A Forward Transfer Admittance, | yfs | -- mS 7 5 A 7 100n VDS=10V VGS=0V f=1kHz 10 1.0 10 ITR00637 | yfs | -- IDSS 2 VDS=10V f=1kHz 2 0.1 2 10 Drain Current, IDSS -- mA 3 | yfs | -- ID 2 Forward Transfer Admittance, | yfs | -- mS Cutoff Voltage, VGS(off) -- V 5 5 3 2 1.0 7 5 3 1.0 7 2 1.0 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 7 ITR00641 PD -- Ta 120 Allowable Power Dissipation, PD -- mW 5 2 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 ITR00642 100 80 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR00646 No.8636-3/6 2SK3796 Embossed Taping Specification 2SK3796-2-TL-E, 2SK3796-3-TL-E, 2SK3796-4-TL-E No.8636-4/6 2SK3796 Outline Drawing 2SK3796-2-TL-E, 2SK3796-3-TL-E, 2SK3796-4-TL-E Land Pattern Example Mass (g) Unit 0.003 mm * For reference Unit: mm 0.7 1.3 0.7 0.7 0.6 0.5 0.5 No.8636-5/6 2SK3796 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. 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Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No.8636-6/6