SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data 3 • For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz 2 • Transition frequency fT = 45 GHz 1 VPS05605 • Gold metalization for high reliability • SIEGET 45 - Line Siemens Grounded Emitter Transistor 45 GHz fT - Line ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 520 APs 1=B Q62702-F1794 2=E Package 3=C 4=E SOT-343 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 2.5 V Collector-base voltage VCBO 12 V Emitter-base voltage VEBO 1 V Collector current IC 40 mA Base current IB 4 mA Total power dissipation, T S ≤ 105 °C Ptot 100 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ...+150 °C Storage temperature Tstg -65 ...+150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 450 K/W 1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11 Sep-09-1998 1998-11-01 BFP 520 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 2.5 3 3.5 V ICBO - - 200 nA IEBO - - 35 nA hFE 50 80 150 - fT - 45 - GHz Ccb - 0.06 - pF Cce - 0.3 - pF Ceb - 0.35 - pF F - 0.95 - dB Gms - 23 - dB |S21|2 - 21 - dB DC characteristics Collector-emitter breakdown voltage I C = 1 mA, I B = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.5 V, I C = 0 DC current gain I C = 20 mA, VCE = 4 V V(BR)CEO AC characteristics Transition frequency IC = 30 mA, VCE = 2 V, f = 2 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Collector-emitter capacitance VCE = 2 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 2 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz Power gain 1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Insertion power gain IC = 20 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZL = 50Ω Third order intercept point at output VCE = 2 V, f = 1.8 GHz, ZS =ZSopt, ZL=ZLopt , IC = 20 mA IC = 7 mA 1dB compression point VCE = 2 V, f = 1.8 GHz, ZS =ZSopt, ZL=ZLopt , IC = 20 mA IC = 7 mA 1) Gms = |S21 / S12| Semiconductor Group Semiconductor Group dBm IP3 - 25 17 dBm P-1dB - 12 5 - 2) Gma = |S21 / S12| (k-(k2-1)1/2) 22 Sep-09-1998 1998-11-01 BFP 520 Common Emitter S-Parameters f GHz S11 MAG ANG S21 S12 S22 MAG ANG MAG ANG MAG ANG 32.273 31.637 27.293 19.6 11.02 7.48 5.636 4.488 3.683 178.6 171.4 140.7 113.5 84.9 67.6 53 39.7 27.5 0.0007 0.0041 0.0194 0.0351 0.00574 0.0788 0.0994 0.1177 0.1343 69.4 92.8 75.9 66.5 56.3 49.2 41.5 32.9 24.7 0.9052 0.9363 0.8523 0.6496 0.3818 0.2407 0.1544 0.095 0.0545 1.2 -4.4 -26.7 -46 -64.6 -73.6 -95.3 -128.9 177.6 RN rn F 50Ω 2) |S21|2 2) VCE = 2 V, /C = 20 mA 0.01 0.1 0.5 1 2 3 4 5 6 0.7244 0.7251 0.6368 0.4768 0.2816 0.225 0.2552 0.3207 0.3675 -0.7 -8.4 -40.7 -73.6 -123.8 -166 156.2 133.6 118.7 Common Emitter Noise Parameters f F min 1) Ga 1) Γopt GHz dB dB MAG ANG Ω - dB dB 0.64 0.49 0.45 0.4 0.26 0.14 0.12 14 30 41 54 82 128 151 21.5 19 18 16.5 12.5 9 8 0.43 0.38 0.36 0.33 0.25 0.18 0.16 1.75 1.55 1.6 1.7 1.6 1.85 1.95 16.1 15.14 14.07 13.13 11.49 9.87 8.28 0.49 0.38 0.34 0.29 0.156 0.08 0.07 12 22 33 45 71 120 150 16 14 14 13.5 11 10 8 0.32 0.28 0.28 0.27 0.22 0.2 0.16 1.5 1.38 1.4 1.5 1.45 1.65 1.8 21.94 19.34 17.54 16.01 13.82 11.93 10.23 V CE = 2 V, IC = 2 mA 0.9 1.8 2.4 3 4 5 6 0.72 0.95 1.07 1.3 1.35 1.7 1.95 21.5 20 16 14.5 11.6 9.5 8 V CE = 2 V, IC = 5 mA 0.89 22 0.9 1.08 20.5 1.8 1.12 18 2.4 1.32 16.2 3 1.35 13.5 4 1.6 11.5 5 1.8 10.5 6 1) Input matched for minimum noise figure, output for maximum gain 2) Z S = ZL = 50Ω For more and detailed S- and Noise-parameters please contact your local Siemens distributor or sales office to obtain a Siemens Application Notes CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group Semiconductor Group 33 Sep-09-1998 1998-11-01 BFP 520 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = tbd aA BF = tbd - NF = tbd - VAF = tbd V IKF = tbd A ISE = tbd fA NE = tbd - BR = tbd - NR = tbd - VAR = tbd V IKR = tbd A ISC = tbd fA NC = tbd - RB = tbd Ω IRB = tbd mA RBM = tbd Ω RE = tbd Ω RC = tbd Ω CJE = tbd fF VJE = tbd V MJE = tbd - TF = tbd ps XTF = tbd - VTF = tbd V ITF = tbd mA PTF = tbd deg CJC = tbd fF VJC = tbd V MJC = tbd - XCJC = tbd - TR = tbd ns CJS = tbd fF VJS = tbd V MJS = tbd - XTB = tbd - EG = tbd eV XTI = tbd - FC = tbd - TNOM tbd K - RS = tbd Ω L BI = 0.47 nH L BO = 0.53 nH L EI = 0.23 nH L EO = 0.05 nH L CI = 0.56 nH L CO = 0.58 nH CBE = 136 fF CCB = 6.9 fF CCE = 134 fF C’-E’-Diode Data (Berkley-SPICE 2G.6 Syntax) : IS = tbd fA N= tbd All parameters are ready to use, no scalling is necessary Package Equivalent Circuit: C CB L BO L BI B B’ Transistor Chip E’ C BE C’ L CI L CO C C’-E’Diode C CE L EI L EO E EHA07389 Valid up to 6GHz The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both leads are combined in one electrical connection. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitentechnik (IMST) 1996 SIEMENS AG For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group Semiconductor Group 44 Sep-09-1998 1998-11-01 BFP 520 For non-linear simulation: • Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. • If you need simulation of thereverse characteristics, add the diode with the C’-E’- diode data between collector and emitter. • Simulation of package is not necessary for frequenties < 100MHz. For higher frequencies add the wiring of package equivalent circuit around the non-linear transistor and diode model. Note: • This transistor is constructed in a common emitter configuration. This feature causes an additional reverse biased diode between emitter and collector, which does not effect normal operation. C B E E EHA07307 Transistor Schematic Diagram The common emitter configuration shows the following advantages: • Higher gain because of lower emitter inductance. • Power is dissipated via the grounded emitter leads, because the chip is mounted on copper emitter leadframe. Please note, that the broadest lead is the emitter lead. The AC characteristics are verified by random sampling. Semiconductor Group Semiconductor Group 55 Sep-09-1998 1998-11-01 BFP 520 Total power dissipation P tot = f (T A*, TS) Transition frequency fT = f (IC) * Package mounted on epoxy f = 2 GHz VCE = parameter in V 52 120 GHz mW 2 44 100 40 TS 80 TA 70 1 36 32 fT P tot 90 28 60 24 50 40 16 30 12 20 8 10 4 0 0 0.75 20 20 40 60 80 100 120 °C 0 0 150 0.5 5 10 15 20 25 30 35 mA TA,TS 45 IC Permissible Pulse Load Permissible Pulse Load R thJS = f (tp) Ptotmax/P totDC = f (tp) 10 1 RthJS Pmax / PDC 10 3 K/W D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 - 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 2 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp Semiconductor Group Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 66 Sep-09-1998 1998-11-01 BFP 520 Power gain G ma, G ms, |S 21|2 = f ( f ) VCE = 2V, I C = 20 mA Power gain Gma, Gms = f (I C) VCE = 2V f = parameter in GHz 32 44 dB 0.9 dB 36 G ms 2.4 28 G G 1.8 24 32 20 3 24 16 4 20 5 Gma 6 12 16 |S21 |2 12 8 8 4 4 0 0.0 1.0 2.0 3.0 4.0 GHz 0 0 6.0 5 10 15 20 25 30 35 mA f 45 IC Power gain G ma, G ms = f (V CE) I C = 20 mA Collector-base capacitance Ccb = f (VCB) VBE = 0, f = 1MHz f = parameter in GHz 0.35 32 0.9 dB pF 1.8 24 0.25 20 Ccb G 2.4 3 0.20 4 16 5 0.15 6 12 0.10 8 0.05 4 0 0.0 0.5 1.0 1.5 2.0 V 0.00 0.0 3.0 VCE Semiconductor Group Semiconductor Group 0.5 1.0 1.5 2.0 V 3.0 VCB 77 Sep-09-1998 1998-11-01 BFP 520 Noise figure F = f (IC) Noise figure F = f (IC) VCE = 2 V, ZS = Z Sopt VCE = 2 V, f = 1.8 GHz 3.0 3.0 dB dB F 2.0 F 2.0 1.5 1.5 f = 6 GHz f = 5 GHz f = 4 GHz f = 3 GHz f = 2.4 GHz f = 1.8 GHz f = 0.9 GHz 1.0 0.5 0.0 0 5 10 15 20 25 30 1.0 Zs = 50Ohm Zs = Zsopt 0.5 mA 0.0 0 40 5 10 15 20 25 mA 30 IC 40 IC Noise figure F = f ( f ) Source impedance for min. VCE = 2 V, ZS = Z Sopt Noise Figuren vers. Frequency VCE = 2 V, I C = 2 mA / 5 mA 3.0 +j50 dB +j25 +j100 +j10 3GHz 2.0 F 4GHz 1.8GHz 0.9GHz 5GHz 6GHz 0 1.5 10 25 50 100 0.45GHz 2mA 5mA 1.0 -j10 IC = 5 mA IC = 2 mA 0.5 -j100 -j25 -j50 0.0 0.0 1.0 2.0 3.0 4.0 5.0 GHz 6.5 f Semiconductor Group Semiconductor Group 88 Sep-09-1998 1998-11-01