ROHM RB160M-90

RB160M-90
Diodes
Schottky barrier diode
RB160M-90
zApplications
General rectification
z Land size figure (Unit : mm)
z External dimensions (Unit : mm)
0.15±0.03
1.6±0.1
3.05
2.6±0.1
①
zFeatures
1) Small power mold type. (PMDU)
2) Low IR
3) High reliability.
3.5±0.2
0.85
1.2
0~0.1
0.9±0.1
0.8±0.1
zStructure
0.45
ROHM : PMDU
JEDEC : SOD-123
①
Manufacture
製造年月Date
0.6
0~0.1
zConstruction
Silicon epitaxial planar
0.15±0.03
0.8±0.1
0.6
PMDU
z Taping specifications (Unit : mm)
φ1.0±0.2
0
8.0±0.2
2.8±0.05
3.5±0.05
4.0±0.1
1.81±0.05
3.71±0.05
0.25±0.05
1.75±0.1
φ1.55±0.1
0.05
2.0±0.05
4.0±0.1
1.05±0.1
zAbsolute maximum ratings (Ta=25°C)
Sym bol
Lim its
Unit
R evers e voltage (repetitive peak)
Param eter
VRM
90
V
R evers e voltagec(DC)
VR
90
V
Average rectified forward current
Io
1
A
IFSM
30
A
Forward current s urge peak ( 60Hz・ 1cyc)
J unction tem perature
Tj
150
℃
S torage tem perature
Ts tg
-40 to +150
℃
Mounted on epoxy board. 180 ° Harf s ine wave
zElectrical characteristics (Ta=25°C)
Param eter
Sym bol
Min.
Typ.
Max.
Unit
Forward voltage
VF
-
-
0.73
V
IF =1.0A
Conditions
Revers e current
IR
-
-
100
µA
VR =90V
1/3
RB160M-90
Diodes
zElectrical characteristic curves (Ta=25°C)
Ta=150℃
1
Ta=125℃
1000
10000
条件:f=1MHz
f=1MHz
Ta=75℃
Ta=25℃
0.1
Ta=150℃
Ta=75℃
Ta=-25℃
0.01
100
Ta=25℃
10
1
Ta=-25℃
0.1
0
100
200
300
400
500
600
10
1
0
700
10
20
30
40
50
60
70
80
90
0
REVERSE CURRENT:IR(uA)
640
90
630
620
610
80
70
60
50
40
AVE:478.3nA
30
σ:36.1612nA
AVE:4.655uA
20
AVE:632.1mV
VF DISPERSION MAP
170
160
150
140
130
120
100
8.3ms
100
50
AVE:56.0A
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
Ifsm
PEAK SURGE
FORWARD CURRENT:IFSM(A)
RESERVE RECOVERY TIME:trr(ns)
150
AVE:149.6pF
Ct DISPERSION MAP
30
1cyc
15
AVE:7.40ns
10
5
8.3ms
50
1
trr DISPERSION MAP
IFSM DISRESION MAP
150
8.3ms
1cyc
0
0
0
30
Ta=25℃
f=1MHz
VR=0V
n=10pcs
180
IR DISPERSION MAP
Ifsm
25
100
0
200
20
110
10
600
15
190
Ta=25℃
T a=25℃
VR=90V
VR=100V
n=30pcs
n=30pcs
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=25℃
IF=1A
n=30pcs
10
200
100
650
5
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
100
0.01
0.001
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=125℃
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(A)
1000
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
2
1000
Mounted on epoxy board
Rth(j-a)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
t
100
50
0
1.5
100
Rth(j-c)
10
IM=10mA
IF=0.5A
1
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
D=1/2
1
DC
Sin(θ=180)
0.5
1ms
time
300us
0.1
0.1
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
Ifsm
0.001
0
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0
0.5
1
1.5
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
2
2/3
RB160M-90
Diodes
1
3
3
0.6
D=1/2
DC
0.4
0.2
0A
Io
0V
VR
t
2
DC
T
D=t/T
VR=45V
Tj=150℃
1.5
D=1/2
1
0.5
2.5
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
2.5
AVERAGE RECTIFIDE
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:P R (W)
0.8
Sin(θ=180)
0A
Io
0V
VR
t
2
DC
T
D=t/T
VR=45V
Tj=150℃
1.5
D=1/2
1
Sin(θ=180)
0.5
Sin(θ=180)
0
0
10
20
30
40
50
60
70
80
REVERSE VOLTAGE:VR(V)
VR-P R CHARACTERISTICS
90
0
0
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve (Io-Ta)
150
0
25
50
75
100
CASE TEMPARATURE:Tc(℃)
Derating Curve (Io-Tc)
125
150
30
ELECTROSTATIC
DDISCHARGE TEST ESD(KV)
25
20
AVE:10.7kV
15
10
AVE:1.70kV
5
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1