Data Sheet Schottky Barrier Diode RB521SM-30 lApplications Small current rectification lDimensions (Unit : mm) 0.8 0.12±0.05 0.6 0.8±0.05 lLand size figure (Unit : mm) 3)High reliability 1.6±0.1 1.2±0.05 1.7 lFeatures 1)Ultra small mold type. (EMD2) 2)Low VF EMD2 lConstruction Silicon epitaxial lStructure 0.3±0.05 0.6±0.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) lTaping specifications (Unit : mm) lAbsolute maximum ratings (Ta=25°C) Parameter Symbol VR Reverse voltage (DC) Average rectified forward current Io Forward current surge peak (60Hz・1cyc) IFSM Junction temperature Tj Storage temperature Tstg lElectrical characteristics (Ta=25°C) Parameter Symbol VF1 Forward voltage VF2 Reverse current IR www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Limits 30 200 1 150 Unit V mA A °C °C -40 to +150 Min. Typ. Max. Unit - - 0.47 V IF=200mA - - 0.41 V - - 30 μA IF=100mA VR=10V 1/3 Conditions 2011.06 - Rev.A Data Sheet RB521SM-30 REVERSE CURRENT:IR (uA) 100 Ta=75℃ 10 Ta=-25℃ 1 Ta=25℃ 1000 Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 1 0.1 0 100 200 300 400 0 500 10 20 1 30 0 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 450 430 420 410 Ta=25℃ VR=10V n=30pcs 40 35 30 25 20 15 AVE:4.775uA 10 32 31 30 29 28 26 25 VF DISPERSION MAP Ct DISPERSION MAP IR DISPERSION MAP 10 10 PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc Ifsm 15 AVE:29.58pF 27 0 20 8.3ms 10 5 20 Ta=25℃ f=1MHz VR=0V n=10pcs 33 5 AVE:421.0mV 400 15 34 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 440 10 35 45 Ta=25℃ IF=200mA n=10pcs 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 50 REVERSE CURRENT:VR(uA) FORWARD VOLTAGE:VF(mV) 10 0.01 0.1 PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHz Ifsm 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(mA) Ta=125℃ 100 Ta=125℃ 10000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 8.3ms 1cyc 5 Ifsm t 5 AVE:5.60A 0 0 1 0 100 1 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISPERSION MAP 1000 0.2 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.6 Rth(j-a) Mounted on epoxy board 0.5 Rth(j-c) 100 0.15 REVERSE POWER DISSIPATION : PR (w) FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 10 D=1/2 DC 0.1 Sin(θ＝180) DC 0.4 0.3 D=1/2 0.2 Sin(θ＝180) 0.05 0.1 10 0.001 0.1 10 1000 TIME:(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0 0 0 0.1 0.2 0.3 0.4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pｆ CHARACTERISTICS 2/3 0.5 0 10 20 30 REVERSE VOLTAGE：VR(V) VR-PR CHARACTERISTICS 2011.06 - Rev.A Data Sheet RB521SM-30 Io 0A 0V VR AVERAGE RECTIFIED FORWARD CURRENT : Io(A) t 0.4 DC T 0.3 D=t/T VR=15V Tj=150℃ D=1/2 0.2 0.1 0.5 Sin(θ＝180) 0A Io 0V VR t AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 0.5 DC 0.4 T D=t/T VR=15V Tj=150℃ 0.3 D=1/2 0.2 0.1 Sin(θ＝180) 0 0 0 25 50 75 100 125 AMBIENT TEMPERATURE：Ta(℃) DERATING CURVE (Io-Ta) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 150 0 25 50 75 100 125 150 CASE TEMPARATURE：Tc(℃) DERATING CURVE (Io-Tc) 3/3 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A