Data Sheet Schottky Barrier Diode RB551VM-30 lApplications High speed switching lDimensions (Unit : mm) 0.1±0.1 0.05 0.8MIN. 1.25±0.1 lLand size figure (Unit : mm) 2.5±0.2 1.7±0.1 2.1 lFeatures 1)Small mold type. (UMD2) 2)Low VF 0.9MIN. 3)High reliability UMD2 lConstruction Silicon epitaxial lStructure 0.7±0.2 0.1 0.3±0.05 ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-901A dot (year week factory) lTaping specifications (Unit : mm) φ 1.55±0.05 2.0±0.05 0.3±0.1 φ 1.05 4.0±0.1 1.40±0.1 2.8±0.1 2.75 8.0±0.2 3.5±0.05 1.75±0.1 4.0±0.1 1.0±0.1 lAbsolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg lElectrical characteristics (Ta=25°C) Parameter Symbol VF1 Forward voltage VF2 Reverse current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. IR Limits 30 20 500 2 125 Unit V V mA A °C °C -40 to +125 Min. Typ. Max. Unit - - 0.36 V IF=100mA - - 0.47 V - - 100 μA IF=500mA VR=20V 1/3 Conditions 2011.06 - Rev.A Data Sheet RB551VM-30 100000 1000 100 Ta=125℃ Ta=75℃ Ta=25℃ 10 Ta=-25℃ 1 Ta=75℃ 1000 Ta=25℃ 100 Ta=-25℃ 10 1 10 0.1 0.1 0 100 200 300 400 0 500 10 20 1 30 0 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 450 430 420 410 180 Ta=25℃ VR=20V n=30pcs 160 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 440 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 140 120 100 80 60 40 Ta=25℃ f=1MHz VR=0V n=10pcs 70 60 50 20 AVE:59.5pF AVE:42.7uA AVE:420.4mV 0 400 40 VF DISPERSION MAP Ifsm Ifsm 8.3ms 10 AVE:3.62A 5 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 1cyc 1 t 5 0 1 10 100 0.1 100 0.3 Rth(j-a) 100 FORWARD POWER DISSIPATION:Pf(W) 0.4 Rth(j-c) 10 D=1/2 DC 0.3 Sin(θ＝180) 0.2 0.2 Sin(θ＝180) 0.1 D=1/2 DC 0.1 0 0 0.1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 0.5 1000 1 0.001 1 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISPERSION MAP Mounted on epoxy board Ifsm 10 REVERSE POWER DISSIPATION:PR (W) PEAK SURGE FORWARD CURRENT:IFSM(A) 15 10 0 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Ct DISPERSION MAP IR DISPERSION MAP 20 15 30 80 200 Ta=25℃ IF=500mA n=30pcs REVERSE CURRENT:IR(uA) FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 f=1MHz 10000 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) Ta=125℃ 10 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1000 0 0.2 0.4 0.6 0.8 AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS 2/3 1 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 2011.06 - Rev.A Io 0A 0V 0.9 T DC 0.6 D=1/2 0.5 0.4 0.3 0.2 Sin(θ＝180) 0.1 Io 0V VR t 0.9 0.7 0A 1 D=t/T VR=10V Tj=125℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR t 1 0.8 Data Sheet RB551VM-30 DC T D=t/T VR=10V Tj=125℃ 0.8 0.7 D=1/2 0.6 0.5 0.4 0.3 Sin(θ＝180) 0.2 0.1 0 0 25 50 75 100 125 0 0 AMBIENT TEMPERATURE:Ta(℃) DERATING CURVE (Io-Ta) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) DERATING CURVE (Io-Tc) 3/3 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A