TOSHIBA RN1104MFV

RN1101MFV∼RN1106MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1101MFV,RN1102MFV,RN1103MFV
RN1104MFV,RN1105MFV,RN1106MFV
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Unit: mm
Ultra-small package, suited to very high density mounting
0.22 ± 0.05
0.4
1
1
3
R1 (kΩ)
R2 (kΩ)
RN1101MFV
4.7
4.7
RN1102MFV
10
10
RN1103MFV
22
22
RN1104MFV
47
47
RN1105MFV
2.2
47
RN1106MFV
4.7
47
0.5 ± 0.05
Type No.
0.13 ± 0.05
2
Equivalent Circuit and Bias Resistor Values
VESM
1. BASE
2. EMITTER
3. COLLECTOR
JEDEC
―
JEITA
TOSHIBA
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
RN1101MFV~1106MFV
Collector-emitter voltage
RN1101MFV~1104MFV
Emitter-base voltage
RN1105MFV, 1106MFV
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1101MFV~1106MFV
0.32 ± 0.05
0.80 ± 0.05
0.4
1.2 ± 0.05
Complementary to the RN2101MFV~RN2106MFV
Lead (Pb) - free
0.8 ± 0.05
Incorporating a bias resistor into the transistor reduces the number of parts,
so enabling the manufacture of ever more compact equipment and
lowering assembly cost.
A wide range of resistor values is available for use in various circuits.
1.2 ± 0.05
―
2-1L1A
Weight: 0.0015 g (typ.)
Symbol
Rating
Unit
VCBO
50
V
VCEO
50
V
VEBO
10
5
V
IC
100
mA
PC(Note)
150
mW
Tj
150
°C
Tstg
−55~150
°C
Note: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
0.5
0.45
1.15
0.4
0.45
0.4
0.4
1
2005-03-30
RN1101MFV∼RN1106MFV
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cutoff current
Test
Circuit
Min
Typ.
Max
VCB = 50 V, IE = 0
―
―
100
VCE = 50 V, IB = 0
―
―
500
0.82
―
1.52
0.38
―
0.71
0.17
―
0.33
0.082
―
0.15
0.078
―
0.145
0.074
―
0.138
RN1101MFV
30
―
―
RN1102MFV
50
―
―
70
―
―
80
―
―
RN1105MFV
80
―
―
RN1106MFV
80
―
―
―
0.1
0.3
RN1101MFV
1.1
―
2.0
RN1102MFV
1.2
―
2.4
RN1103MFV
1.3
―
3.0
1.5
―
5.0
RN1105MFV
0.6
―
1.1
RN1106MFV
0.7
―
1.3
1.0
―
1.5
0.5
―
0.8
―
0.7
―
RN1101MFV
3.29
4.7
6.11
RN1102MFV
7
10
13
15.4
22
28.6
RN1104MFV
32.9
47
61.1
RN1105MFV
1.54
2.2
2.86
RN1106MFV
3.29
4.7
6.11
RN1101MFV~
1104MFV
0.8
1.0
1.2
0.0376
0.0468
0.0562
0.08
0.1
0.12
RN1101MFV~
1106MFV
Symbol
ICBO
ICEO
―
Test Condition
RN1101MFV
RN1102MFV
Emitter cutoff current
RN1103MFV
RN1104MFV
VEB = 10 V, IC = 0
IEBO
―
RN1105MFV
VEB = 5 V, IC = 0
RN1106MFV
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
RN1103MFV
RN1104MFV
RN1101MFV~
1106MFV
RN1104MFV
Input voltage (OFF)
Collector output
capacitance
Input resistor
Resistor ratio
RN1101MFV~
1104MFV
RN1105MFV,
1106MFV
RN1101MFV~
1106MFV
RN1103MFV
RN1105MFV
hFE
VCE (sat)
VI (ON)
VI (OFF)
Cob
R1
R1/R2
―
―
―
―
―
―
―
RN1106MFV
2
VCE = 5 V, IC = 10 mA
IC = 5 mA, IB = 0.25
mA
VCE = 0.2 V, IC = 5
mA
VCE = 5 V, IC = 0.1
mA
VCB = 10 V, IE = 0,
f = 1 MHz
―
―
Unit
nA
mA
V
V
V
pF
kΩ
2005-03-30
RN1101MFV∼RN1106MFV
IC - VI (ON)
RN1101MFV
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
Ta = 100°C
10
25
1
-25
COMMON EMITTER
VCE = 0.2 V
0.1
1
10
INPUT VOLTAGE VI (ON) (V)
25
1
-25
COMMON EMITTER
VCE = 0.2 V
100
0.1
10
100
IC - VI (ON)
RN1104MFV
100
COLLECTOR CURRENT IC (mA)
100
Ta = 100°C
10
1
INPUT VOLTAGE VI (ON) (V)
IC - VI (ON)
RN1103MFV
COLLECTOR CURRENT IC (mA)
Ta = 100°C
10
0.1
0.1
25
1
-25
COMMON EMITTER
VCE = 0.2 V
Ta = 100°C
10
25
1
-25
COMMON EMITTER
VCE = 0.2 V
0.1
0.1
0.1
1
10
0.1
100
RN1105MFV
1
10
100
INPUT VOLTAGE VI (ON) (V)
INPUT VOLTAGE VI (ON) (V)
IC - VI (ON)
IC - VI (ON)
RN1106MFV
100
100
Ta = 100°C
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
IC - VI (ON)
RN1102MFV
100
100
10
25
1
-25
COMMON EMITTER
VCE = 0.2 V
0.1
Ta = 100°C
10
25
1
-25
COMMON EMITTER
VCE = 0.2 V
0.1
0.1
1
10
100
0.1
INPUT VOLTAGE VI(ON) (V)
1
10
100
INPUT VOLTAGE VI (ON) (V)
3
2005-03-30
RN1101MFV∼RN1106MFV
RN1101MFV
RN1102MFV
IC - VI(OFF)
IC - VI (OFF)
10000
COMMON EMITTER
VCE = 5 V
COLLECTOR CURRENT IC (µA)
COLLECTOR CURRENT IC (µA)
10000
1000
Ta = 100°C
25
-25
100
10
COMMON EMITTER
VCE = 5 V
1000
Ta = 100°C
100
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0.4
0.6
0.8
INPUT VOLTAGE VI(OFF) (V)
RN1103MFV
10000
1
1.2
1.4
1.6
1.8
2
INPUT VOLTAGE VI (OFF) (V)
RN1104MFV
IC - VI (OFF)
IC - VI( OFF)
10000
COMMON EMITTER
VCE = 5 V
COLLECTOR CURRENT IC (µA)
COLLECTOR CURRENT IC (µA)
-25
10
0.4
1000
Ta = 100°C
25
-25
100
10
COMMON EMITTER
VCE = 5 V
1000
Ta = 100°C
25
-25
100
10
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0.4
0.6
INPUT VOLTAGE VI (OFF) (V)
RN1105MFV
0.8
1
1.2
1.4
1.6
1.8
2
INPUT VOLTAGE VI (OFF) (V)
RN1106MFV
IC - VI(OFF)
10000
IC - VI(OFF)
10000
COMMON EMITTER
VCE = 5 V
COLLECTOR CURRENT IC (µA)
COLLECTOR CURRENT IC (µA)
25
1000
Ta = 100°C
25
-25
100
10
COMMON EMITTER
VCE = 5 V
1000
Ta = 100°C
25
-25
100
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
INPUT VOLTAGE VI (OFF) (V)
0.2
0.4
0.6
0.8
1
1.2
1.4
INPUT VOLTAGE VI (OFF) (V)
4
2005-03-30
RN1101MFV∼RN1106MFV
RN1101MFV
1000
DC CURRENT GAIN hFE
DC CURRENT GAIN hFE
Ta = 100°C
100
hFE - IC
RN1102MFV
hFE - IC
1000
25
-25
10
Ta = 100°C
25
100
-25
COMMON EMITTER
VCE = 5 V
COMMON EMITTER
VCE = 5 V
10
1
1
10
1
100
10
COLLECTOR CURRENT IC (mA)
RN1103MFV
100
COLLECTOR CURRENT IC (mA)
RN1104MFV
hFE - IC
1000
hFE - IC
1000
DC CURRENT GAIN hFE
DC CURRENT GAIN hFE
Ta = 100°C
Ta = 100°C
25
100
-25
25
-25
100
COMMON EMITTER
VCE = 5 V
COMMON EMITTER
VCE = 5 V
10
10
1
10
100
1
COLLECTOR CURRENT IC (mA)
RN1105MFV
100
COLLECTOR CURRENT IC (mA)
RN1106MFV
hFE - IC
1000
hFE - IC
1000
Ta = 100°C
Ta = 100°C
DC CURRENT GAIN hFE
DC CURRENT GAIN hFE
10
25
-25
100
25
-25
100
COMMON EMITTER
VCE = 5 V
COMMON EMITTER
VCE = 5 V
10
10
1
10
100
1
10
100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
5
2005-03-30
RN1101MFV∼RN1106MFV
RN1101MFV
VCE (sat) - IC
RN1102MFV
1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) ( V)
COMMON EMITTER
IC / IB = 10
Ta = 100°C
25
-25
VCE (sat) - IC
COMMON EMITTER
IC / IB = 10
Ta = 100°C
0.1
-25
25
0.01
1
10
1
100
RN1103MFV
VCE (sat) - IC
RN1104MFV
1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) ( V)
COMMON EMITTER
IC / IB = 10
Ta = 100°C
25
-25
10
100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
VCE (sat) - IC
COMMON EMITTER
IC / IB = 10
Ta = 100°C
0.1
25
-25
0.01
1
10
1
100
RN1105MFV
VCE (sat) - IC
RN1106MFV
1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) ( V)
COMMON EMITTER
IC / IB = 10
Ta = 100°C
-25
10
100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
25
VCE (sat) - IC
COMMON EMITTER
IC / IB = 10
0.1
Ta = 100°C
-25
25
0.01
1
10
1
100
10
100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
6
2005-03-30
RN1101MFV∼RN1106MFV
Type Name
Marking
RN1101MFV
XA
RN1102MFV
XB
RN1103MFV
XC
RN1104MFV
XD
RN1105MFV
XE
RN1106MFV
XF
7
2005-03-30
RN1101MFV∼RN1106MFV
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
8
2005-03-30