RQK0201QGDQA Silicon N Channel MOS FET Power Switching REJ03G1321-0300 Rev.3.00 Jun 12, 2006 Features • Low on-resistance RDS(on) = 25 mΩ typ (VGS = 4.5 V, ID = 2.4 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 1 2 G 1. Source 2. Gate 3. Drain 2 S 1 Note: Marking is “QG”. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current ID Note1 Drain peak current ID(pulse) Body - drain diode reverse drain current IDR Channel dissipation Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) Rev.3.00 Jun 12, 2006 page 1 of 6 Ratings 20 ±12 4.5 15 4.5 0.8 150 –55 to +150 Unit V V A A A W °C °C RQK0201QGDQA Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Drain to source leak current Gate to source cutoff voltage Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) Min 20 ±12 — — 0.4 Typ — — — — — Max — — ±10 1 1.4 Unit V V µA µA V Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±10 V, VDS = 0 VDS = 20 V, VGS = 0 VDS = 10 V, ID = 1 mA Drain to source on state resistance RDS(on) — 30 39 mΩ ID = 2.4A, VGS = 4.5 VNote3 RDS(on) — 38 53 mΩ ID = 2.4A, VGS = 2.5 VNote3 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg 9 — — — — — — — — 12 479 106 48 14 53 35 6 4.6 — — — — — — — — — S pF pF pF ns ns ns ns nC ID = 2.4A, VDS = 10 VNote3 Gate to source charge Gate to drain charge Body - drain diode forward voltage Notes: 3. Pulse test Qgs Qgd VDF — — — 0.9 1.3 0.85 — — 1.1 nC nC V Rev.3.00 Jun 12, 2006 page 2 of 6 VDS = 10 V VGS = 0 f = 1 MHz ID = 2.4 A VGS = 4.5 V RL = 5.50 Ω Rg = 4.7 Ω VDD = 10 V VGS = 4.5 V ID = 4.5 A IF = 4.5 A, VGS = 0 Note3 RQK0201QGDQA Main Characteristics Maximum Channel Power Dissipation Curve Maximum Safe Operation Area 100 1 Channel Dissipation Pch (W) Operation in this area is limited by RDS(on) Drain Current ID (A) 0.8 0.6 0.4 0.2 100 µs 10 1 PW 1 DC 10 = m s m s 10 0 m s O pe ra tio n 0.1 Ta = 25°C 1 Shot Pulse 0 0 50 100 0.01 0.01 150 0.1 1 10 100 Drain to Source Voltage VDS (V) Ambient Temperature Ta (°C) *When using the glass epoxy board (FR-4: 40 × 40 × 1 mm) Typical Transfer Characteristics (1) Typical Output Characteristics 15 2.2 V VDS = 10 V Pulse Test 3V 10 V 12 2.0 V Pulse Test Tc = 25°C 9 1.8 V 6 1.6 V 3 1.4 V Drain Current ID (A) Drain Current ID (A) 15 12 9 6 3 Tc = 75°C 0 VGS = 0 V 0 2 4 6 8 0 10 0 Drain to Source Voltage VDS (V) 0.5 1 25°C –25°C 1.5 2 2.5 3 3.5 4 Gate to Source Voltage VGS (V) Gate to Source Cutoff Voltage vs. Typical Transfer Characteristics (2) Drain Current ID (A) VDS = 10 V Pulse Test 0.1 0.01 Tc = 75°C 25°C 0.001 –25°C 0.0001 0 0.5 1 1.5 2 2.5 Gate to Source Voltage VGS (V) Rev.3.00 Jun 12, 2006 page 3 of 6 3 Gate to Source Cutoff Voltage VGS(off) (V) 1 Case Temperature 1.5 VDS = 10 V Pulse Test ID = 10 mA 1 1 mA 0.5 0.1 mA 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) 400 Pulse Test Tc = 25°C 300 200 4.5 A 100 2.4 A 1A 0 0 0.5 A 2 4 6 8 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 1000 Pulse Test Tc = 25°C 100 VGS = 2.5 V 4.5 V 10 V 10 0.1 1 10 100 Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature Static Drain to Source on State Resistance vs. Case Temperature 70 50 60 Drain to Source on State Resistance RDS(on) (mΩ) Gate to Source Voltage VGS (V) ID = 4.5 A 2.4 A 50 40 1A 0.5 A 30 0 25 50 75 100 125 150 ID = 4.5 A 40 2.4 A 30 1A 0.5 A 20 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current Zero Gate Voltage Drain current vs. Case Temperature 100 Pulse Test VDS = 10 V –25°C 10 25°C 1 Tc = 75°C 0.1 0.01 0.01 Pulse Test VGS = 4.5 V Case Temperature Tc (°C) 0.1 1 10 Drain Current ID (A) Rev.3.00 Jun 12, 2006 page 4 of 6 100 IDSS (nA) 20 –25 Pulse Test VGS = 2.5 V Zero Gate Voltage Drain current Forward Transfer Admittance |yfs| (S) Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage VDS(on) (mV) RQK0201QGDQA 10000 1000 Pulse Test VGS = 0 V VDS = 20 V 100 10 1 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) RQK0201QGDQA Switching Characteristics 16 30 12 5V 10 V VDD = 20 V 20 VDD = 20 V 8 VGS 10 V 5V 10 4 ID = 4.5 A Tc = 25°C 0 VDS 0 2 4 6 0 10 8 1000 Switching Time t (ns) 40 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Dynamic Input Characteristics td(on) 10 tf 1 10 100 Gate Charge Qg (nc) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Input Capacitance vs. Gate to Source Voltage 900 Ciss 850 800 Coss 100 Crss Ciss (pF) Ciss, Coss, Crss (pF) tr td(off) 1 0.1 1000 10 15 VDS = 0 V f = 1 MHz –10 –8 –6 –4 –2 20 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Reverse Drain Current vs. Source to Drain Voltage Body-Drain Diode Forward Voltage vs. Case Temperature 15 Pulse Test Tc = 25°C 10 V 12 5V 9 6 3 0 0 700 600 5 –5, –10 V VGS = 0 V 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Rev.3.00 Jun 12, 2006 page 5 of 6 Body-Drain Diode Forward Voltage VSDF (V) 10 0 750 650 VGS = 0 V f = 1 MHz Reverse Drain Current IDR (A) 100 VDD = 10 V VGS = 4.5 V Rg = 4.7 Ω PW = 5 µs Tc = 25°C 0.6 VGS = 0 0.5 0.4 ID = 10 mA 0.3 1 mA 0.2 25 50 75 100 125 Case Temperature Tc (°C) 150 RQK0201QGDQA Package Dimensions JEITA Package Code SC-59A Package Name MPAK RENESAS Code PLSP0003ZB-A D Previous Code MPAK(T) / MPAK(T)V A Q e E c HE L A MASS[Typ.] 0.011g LP L1 Reference Dimension in Millimeters Symbol Min Nom Max A3 A x M S b A e A2 A e1 A1 S b b1 c1 I1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 I1 Q Ordering Information Part Name RQK0201QGDQATL-E Quantity 3000 pcs. Rev.3.00 Jun 12, 2006 page 6 of 6 Shipping Container φ178 mm reel, 8 mm Emboss taping 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 1.1 0.25 0.42 0.4 0.13 0.11 1.5 0.95 2.8 1.3 0.1 1.2 0.5 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.95 1.05 0.3 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145 Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 © 2006. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .6.0