RT3T1CU Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3T1CU is a composite transistor built Unit:mm 1.6 ±0.05 with RT1N141 chip and RT1P136 chip in USM6F package. 1.2 ±0.05 1pin マーク 6 (0.5) FEATURE Silicon epitaxial type 1 0.5 Each transistor elements are independent. 1.6 ±0.05 Mini package for easy mounting (0.95) 1. 0 2 0.5 5 0.2 ±0.05 (0.5) APPLICATION 3 Inverted circuit, switching circuit, 4 (Φ0.1 ~0.2) interface circuit, driver circuit 0.12 ±0.05 0.5 ±0.05 ※PNP built in transistor of ”-”sign is abbreviation. ⑥ TERMINAL CONNECTOR ①:EMITTER1 ②:BASE1 ③:COLLECTOR2 ④:EMITTER2 ⑤:BASE2 ⑥:COLLECTOR1 ④ ⑤ R1 RTr1 R2 R2 ① R1 ② RTr2 JEITA:- ISAHAYA:USM6F ③ MAXIMUM RATING (Ta=25℃) SYMBOL PARAMETER RATING UNIT 50 V 10 V VCBO Collector to Base voltage VEBO Emitter to Base voltage 6 V VCEO Collector to Emitter voltage 50 V IC Collector current 100 mA ICM Peak Collector current 200 mA PC Collector dissipation(Total, Ta=25℃) 125 mW Tj Junction temperature +150 ℃ Tstg Storage temperature -55~+150 ℃ Tr1 Tr2 MARKING ISAHAYA ELECTRONICS CORPORATION 6 5 4 1C 1 2 3 RT3T1CU Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol Parameter V(BR)CEO Collector to Emitter break down voltage ICBO Collector cut off current Min I C=100µA,RBE=∞ Typ DC forward current gain VCE(sat) Collector to Emitter saturation voltage VI(ON) Input on voltage VI(OFF) Input off voltage R1 Input resistor R2/R1 Resistor ratio fT Gain band width product TYPICAL CHARACTERISTICS Tr1 Tr2 Tr1 Tr2 Tr1 Tr2 Tr1 Tr2 Tr1 Tr2 Tr1 Tr2 Tr1 Tr2 Unit V 0.1 VCE=5V,I C=10mA VCE=5V,I C=5mA µA 50 33 0.1 I C=10mA,I B=0. 5mA 1.5 0.7 1.1 0.6 10 1.0 1.0 10 200 150 VCE=0.2V,I C=5mA 0.8 0.4 7.0 0.7 0.9 8 VCE=5V,I C=100µA VCE=6V,I E=10mA 0.3 0.3 3.0 1.2 V V V 13 1.3 1.1 12 KΩ MHZ (Tr1) INPUT ON VOLTAGE VS. COLLECTOR CURRENT DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 1000 100 VCE=0.2V DC FORWARD CURRENT GAIN hFE VCE=5V 10 100 10 1 1 10 100 1 10 COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT VS. INPUT OFF VOLTAGE 1000 VCE=5V COLLECTOR CURRENT IC(mA) Max 50 VCB=50V,I E =0mA hFE INPUT ON VOLTAGE VI(ON)(V) Limits Test conditions 100 10 0.0 0.4 0.8 1.2 1.6 2.0 INPUT OFF VOLTAGE VI(OFF)(V) ISAHAYA ELECTRONICS CORPORATION 100 PRELIMINARY RT3T1CU Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type IN P U T ON V OL TA GE V S. C OL L EC TOR C U R R E N T D C F OR W A R D C U R R E N T GA IN V S. C OL L E C TOR C U R R E N T -10 DC FORWARD CURRENT GAIN hFE INPUT ON VOLTEGE VI(ON)(V) TYPICAL CHARACTERISTICS ( Tr2 ) 1000 VCE=-0.2V -1 -0.1 -1 -10 -100 COLLECTOR CURRENT I C(mA) VCE=-5V 100 10 -1 -10 -100 COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT IC(μA) C OL L E C TOR C U R R E N T V S. IN P U T OF F V OL TA G E -1000 VCE=-5V -100 -10 0 -0.4 -0.8 -1.2 -1.6 INPUT OFF VOLTAGE VI(OFF) (V) -2 ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials ·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. ·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. ·All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. ·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Jan.2003