ISAHAYA RT3YB7M

RT3YB7M
Composite Transistor
For Muting Application
DESCRIPTION
is
a
composite
transistor
built
OUTLINE DRAWING
with
Unit:mm
1.25
①
⑥
0.65
2.1
SC-88 package.
②
⑤
0.65
RT1P140 and two muting transistor with resistor in
③
④
FEATURE
・RT3YB7M is built in RTr1 side RT1P140,and RTr2,RTr3 side
・Built-in bias resistor
2.0
composite muting transistor with resistor.
RTr1:R1=10kΩ RTr2,RTr3:R1=10kΩ
0.2
RT3YB7M
・Mini package for easy mounting
APPLICATION
0.13
0~0.1
0.65
0.9
muting circuit、switching circuit
⑤
⑥
RTr1
④
RTr2
RTr3
TERMINAL
CONNECTOR
①:BASE1
②:COLLECTOR1
BASE2,3
③:COLLECTOR2,3
④:EMITTER3
⑤:EMITTER2
⑥:EMITTER1
JEITA:SC-88
①
②
MAXIMUM RATING (Ta=25℃)
SYMBOL
PARAMETER
MARKING
RTr1
RATING
RTr2,RTr3
RATING
UNIT
VCBO
Collector to Base voltage
-9
40
V
VEBO
Emitter to Base voltage
-50
40
V
VCEO
Collector to Emitter voltage
IC
Collector current
Collector dissipation(Ta=25 )
-9
15
V
-100
200
mA
150
mW
Tj
Junction temperature
+150
℃
Tstg
Storage temperature
-55~+150
℃
PC(Total)
③
ISAHAYA ELECTRONICS CORPORATION
⑥ ⑤ ④
C97
9
.YB
① ② ③
RT3YB7M
Composite Transistor
For Muting Application
Electrical characteristics
Symbol
VCBO
(Ta=25℃)(RTr1side)
Test conditions
Parameter
Collector-base breakdown voltage
Limits
Min
Typ
Max
Unit
IC=-50μA , IE=0mA
-9
V
VEBO
Emitter-base breakdown voltage
IE=-50μA , IC=0mA
-50
V
VCEO
Collector-emitter breakdown voltage
IC=-1mA , RBE=∞
-9
V
ICBO
Collector cutoff current
VCB=-6V , IE=0mA
IEBO
Emitter cutoff current
VEB=-50V , I C=0mA
hFE
DC current transfer ratio
VCE=-5V , IC=-1mA
R1
Input resistance
-
-0.1
μA
-0.1
μA
10
-
10
KΩ
Electrical characteristics(Ta=25℃)(RTr2,RTr3 common)
Symbol
Test conditions
Parameter
Limits
Min
Typ
Max
Unit
VCBO
Collector-base breakdown voltage
IC=50μA , IE=0mA
40
V
VEBO
Emitter-base breakdown voltage
IE=50μA , IC=0mA
40
V
VCEO
Collector-emitter breakdown voltage
IC=1mA , RBE=∞
15
ICBO
Collector cutoff current
VCB=40V , IE=0mA
IEBO
Emitter cutoff current
VEB=40V , IC=0mA
hFE
DC current transfer ratio
VCE=5V , IC=10mA
VCE(sat)
Collector-emitter saturation voltage
IC=50mA , IB=5mA
V
820
-
0.5
μA
0.5
μA
2500
-
100
mV
R1
Input resistance
10
KΩ
fT
Transition frequency
VCE=6V , IE=-10mA
55
MHz
Ron
Output On-resistance
VIN=3V, f=1MHz
2.0
Ω
ISAHAYA ELECTRONICS CORPORATION
TYPICAL CHARACTERISTICS(RTr2,RTr3)
INPUT ON VOLTAGE
VS. COLLECTOR CURRENT
1000
VCE=0.2V
COLLECTOR CURRENT IC (uA)
INPUT ON VOLTAGE VI(ON) (V)
100
COLLECTOR CURRENT
VS. INPUT OFF VOLTAGE
10
Ta=-40℃
25℃
1
75℃
0.1
VCE=5V
Ta=-40℃
100
25℃
75℃
10
0.1
1
10
100
1000
0
0.2
COLLECTOR CURRENT IC (mA)
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
VCE=5V
DC REVERSE CURRENT GAIN hFER
DC FORWARD CURRENT GAIN hFE
0.8
1
10000
75℃
1000
25℃
Ta=-40℃
10
VEC=5V
75℃
1000
100
25℃
Ta=-40℃
10
1
1
0.1
1
10
100
0.1
1000
1
10
100
1000
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
COLLECTOR TO EMITTER SATURATION VOLTAGE
VS. COLLECTOR CURRENT
ON RESISTANCE VS. INPUT VOLTAGE
100
1000
f=1kHz
RL=1kΩ
IC/IB=20
ON RESISTANCE Ron(Ω)
COLLECTOR TO EMITTER
SATURATION VOLTAGE VCE(sat) (mV)
0.6
DC REVERSE CURRENT GAIN
VS. COLLECTOR CURRENT
10000
100
0.4
INPUT OFF VOLTAGE VI(OFF) (V)
100
75℃
10
25℃
Ta=-40℃
1
0.1
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
1000
Ta=-40℃
10
25℃
75℃
1
0.1
0.1
1
10
INPUT VOLTAGE VI(V)
ISAHAYA ELECTRONICS CORPORATION
100
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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Jun.2008