PRELIMINARY RT3WLMM Composite Transistor For Low Frequency Amplify Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3WLMM is a composite transistor built with Unit：mm 2.1 2SC3052 chip and 2SA1235A chip in SC-88 package. 2.0 Each transistor elements are independent. Mini package for easy mounting ① ⑥ 0.65 Silicon epitaxial type ② ⑤ 0.65 FEATURE ③ ④ 0.2 1.25 APPLICATION 0.13 0～0.1 0.65 0.9 For low frequency amplify application TERMINAL CONNECTOR ①：EMITTER1 ②：BASE1 ③：COLLECTOR2 ④：EMITTER2 ⑤：BASE2 ⑥：COLLECTOR1 Tr1 Tr2 JEITA：SC-88 MAXIMUM RATING (Ta=25℃) SYMBOL PARAMETER RATING Tr1 Tr2 50 60 UNIT VCBO Collector to Base voltage VEBO Emitter to Base voltage 6 V VCEO Collector to Emitter voltage 50 V IC Collector current 200 mA Collector dissipation（Ta=25℃） V 150 mW Tj Junction temperature ＋125 ℃ Tstg Storage temperature -55～＋125 ℃ PC（Total） MARKING ISAHAYA ELECTRONICS CORPORATION 6 5 4 . WL M １ 2 3 PRELIMINARY RT3WLMM Composite Transistor For Low Frequency Amplify Application Silicon Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol Parameter Limits Test conditions IC=100μA,RBE=∞ Unit Min Typ Max 50 - - V - 0.1 μA - 0.1 μA - V(BR)CEO Collector to Emitter break down voltage ICBO Collector cut off current VCB =50V,IE=0 - IEBO Emitter cut off current VEB=6V,IC=0 - hFE* DC forward current gain VCE=6V,IC=1mA 150 - 500 hFE DC forward current gain VCE=6V,IC=0.1mA 90 - - - VCE(sat) Collector to Emitter saturation voltage IC=100mA,IB=10mA - - 0.3 V fT Gain band width product - MHZ Collector output capacitance NF Noise figure (Tr1) VCE=6V,IE=-0.1mA,f=1kHZ,RG=2kΩ (Tr2) VCE=-6V,IE=0.3mA,f=100HZ,RG=10kΩ - 200 2.5 4.0 - - Cob VCE=6V,IE=-10mA (Tr1) VCB=6V,IE=0,f=1MHZ (Tr2) VCB=-6V,IE=0,f=1MHZ pF 15 20 dB * : It shows hFE classification in right table. ISAHAYA ELECTRONICS CORPORATION Item E F hFE 150～300 250～500 PRELIMINARY RT3WLMM Composite Transistor For Low Frequency Amplify Application Silicon Epitaxial Type TYPICAL CHARACTERISTICS （Tr1） COMMON EMITTER TRANSFER COMMON EMITTER OUTPUT 0.16mA 50 0.12mA 40 0.10mA 30 0.08mA 0.06mA 20 0.04mA 10 0.02mA IB=0 1 2 3 4 40 30 20 10 0 0 0 Ta=25℃ VCE=6V Ta=25℃ 0.14mA COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT IC(mA) 50 0 5 COLLECTOR EMITTER VOLTAGE VCE(V) 10000 250 GAIN BAND WIDTH PRODUCT fT(MHz) Ta=25℃ VCE=6V 100(@IC=1mA) 1000 100 10 1 0.1 1 10 100 1000 COLLECTOR CURRENT IC(mA) Ta=25℃ VCE=6V 200 150 100 50 0 -0.1 -1 -10 EMITTER CURRENT IE(mA) COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE 100 COLLECTOR OUTPUT CAPACITANCE Cob(pF) 1 GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT RELATIVE VALUE OF DC FORWARD CURRENT GAIN hFE 0.2 0.4 0.6 0.8 BASE TO EMITTER VOLTAGE VBE(V) Ta=25℃ IE=0 f=1MHz 10 1 0.1 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE VCB(V) ISAHAYA ELECTRONICS CORPORATION -100 PRELIMINARY RT3WLMM Composite Transistor For Low Frequency Amplify Application Silicon Epitaxial Type TYPICAL CHARACTERISTICS （Tr2） COMMON EMITTER OUTPUT COMMON EMITTER TRANSFER -50 -50 0.18mA Ta=25℃ 0.16mA -40 0.12mA 0.10mA -30 0.08mA 0.06mA -20 0.04mA -10 COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT IC(mA) Ta=25℃ VCE=-6V 0.14mA -40 0.02mA -30 -20 -10 IB=0 -0 -0 -1 -2 -3 -4 -0 -0.0 -5 COLLECTOR EMITTER VOLTAGE VCE(V) -0.2 -0.4 -0.6 -0.8 BASE TO EMITTER VOLTAGE VBE(V) GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 250 Ta=25℃ VCE=-6V 100(@IC=-1mA) GAIN BAND WIDTH PRODUCT fT(MHz) RELATIVE VALUE OF DC FORWARD CURRENT GAIN hFE 10000 1000 100 10 1 -0.1 Ta=25℃ VCE=-6V 200 150 100 50 0 -1 -10 -100 COLLECTOR CURRENT IC(mA) -1000 0.1 1 10 EMITTER CURRENT IE(mA) COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE 100 COLLECTOR OUTPUT CAPACITANCE Cob(pF) -1.0 Ta=25℃ IE=0 f=1MHz 10 1 0.1 -0.1 -1 -10 COLLECTOR TO BASE VOLTAGE VCB(V) -100 ISAHAYA ELECTRONICS CORPORATION 100 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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