1.5V Drive Nch MOSFET RW1C020UN zDimensions (Unit : mm) zStructure Silicon N-channel MOSFET WEMT6 zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Space Saving, Small Surface Mount Package (WEMT6). 4) Low voltage drive (1.5V drive). (6) (5) (4) (1) (2) (3) Abbreviated symbol : XK zInner circuit zApplications Switching (6) Package (4) ∗2 zPackaging specifications Type (5) Taping Code T2R Basic ordering unit (pieces) 8000 ∗1 RW1C020UN (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Range of Storage temperature Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 20 ±10 ±2 ±6 0.5 6 0.7 150 −55 to +150 Unit V V A A A A W °C °C Symbol Rth (ch-a) ∗ Limits 179 Unit °C / W ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board zThermal resistance Parameter Channel to ambient ∗ When mounted on a ceramic board www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/4 2009.05 - Rev.A Data Sheet RW1C020UN zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time RDS (on) ∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd ∗ ∗ ∗ ∗ ∗ Min. − 20 − 0.3 − − − − 1.8 − − − − − − − Typ. − − − − 75 95 130 170 − 180 45 25 6 17 30 30 Max. ±10 − 1 1.0 105 135 185 240 − − − − − − − − Unit µA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns ∗ − 2.0 − nC ∗ − 0.6 − nC ∗ − 0.4 − nC Conditions VGS= ±10V, VDS=0V ID= 1mA, VGS=0V VDS= 20V, VGS=0V VDS= 10V, ID= 1mA ID= 2A, VGS= 4.5V ID= 2A, VGS= 2.5V ID= 1A, VGS= 1.8V ID= 0.4A, VGS= 1.5V VDS= 10V, ID= 2A VDS= 10V VGS=0V f=1MHz VDD 10V ID= 1A VGS= 4.5V RL 10Ω RG=10Ω VDD 10V ID= 2A VGS= 4.5V RL 5Ω RG=10Ω ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol Min. Typ. Max. Unit VSD ∗ − − 1.2 V Conditions IS= 2A, VGS=0V ∗Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/4 2009.05 - Rev.A Data Sheet RW1C020UN zElectrical characteristics curves 4 VGS= 10V VGS= 4.5V VGS= 2.5V 3 VGS= 1.8V 2 VGS= 1.5V VGS= 1.3V 1 3 VGS= 1.5V 2 VGS= 1.3V 1 0.4 0.6 0.8 1 0 2 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 10 0.01 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 1 1 10 DRAIN-CURRENT : ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 10 0.01 VGS= 2.5V Pulsed 10 0.01 10 DRAIN-CURRENT : ID [A] Fig.8 Static Drain-Source On-State Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 1 10 DRAIN-CURRENT : ID [A] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 2 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 10 0.1 1.5 100 VGS= 1.5V Pulsed 100 1 GATE-SOURCE VOLTAGE : VGS[V] DRAIN-CURRENT : ID [A] 100 10 0.01 0.5 Fig.3 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 1000 VGS= 1.8V Pulsed 0 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 DRAIN-CURRENT : ID [A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] 8 1000 VGS= 4.5V Pulsed Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 1000 6 100 1 0.01 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] 1000 VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V 0.1 0.1 Fig.2 Typical Output Characteristics(Ⅱ) 100 10 0.01 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) Ta= 25°C Pulsed 4 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 0.2 1 0.001 0 0 VDS= 10V Pulsed VGS= 1.2V VGS= 1.2V 0 1000 10 Ta=25°C Pulsed VGS= 4.5V VGS= 2.5V VGS= 1.8V DRAIN CURRENT : ID [A] Ta=25°C Pulsed DRAIN CURRENT : ID [A] DRAIN CURRENT : ID [A] 4 10 VDS= 10V Pulsed 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0.1 1 10 DRAIN-CURRENT : ID [A] Fig.9 Forward Transfer Admittance vs. Drain Current Resistance vs. Drain Current(Ⅴ) 3/4 2009.05 - Rev.A Data Sheet RW1C020UN 300 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 250 ID = 2.0A 200 ID = 1.0A 150 100 tf 100 0.5 1 10 td (on) tr 0 0 Ta=25°C VDD = 10V VGS=4.5V R G=10Ω Pulsed td (off) 50 0.01 1.5 1 0 2 4 6 8 10 0.01 0.1 GATE-SOURCE VOLTAGE : VGS[V] SOURCE-DRAIN VOLTAGE : VSD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 1 10 DRAIN-CURRENT : ID [A] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage Fig.12 Switching Characteristics 1000 5 Ciss CAPACITANCE : C [pF] GATE-SOURCE VOLTAGE : VGS [V] 1000 Ta= 25°C Pulsed SWITCHING TIME : t [ns] VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] REVERSE DRAIN CURRENT : Is [A] 10 4 3 2 Ta=25°C VDD = 10V ID = 2A RG=10Ω Pulsed 1 0 0 0.5 1 1.5 2 2.5 100 10 Coss Ta=25°C f=1MHz VGS=0V 0.01 3 Crss 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] TOTAL GATE CHARGE : Qg [nC] Fig.14 Typical Capacitance vs. Drain-Source Voltage Fig.13 Dynamic Input Characteristics zMeasurement circuit Pulse Width VGS ID VDS RL VDS 50% 10% D.U.T. VDD RG 90% 50% 10% VGS 10% 90% td(on) 90% td(off) tr ton Fig.1-1 Switching Time Measurement Circuit tr toff Fig.1-2 Switching Waveforms VG VGS ID VDS Qg VGS RL D.U.T. IG (Const.) RG Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform zNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 4/4 2009.05 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. R0039A