INTEGRATED CIRCUITS SA2421 2.45 GHz low voltage RF transceiver Product specification Supersedes data of 2000 Feb 11 2000 Mar 13 Philips Semiconductors Product specification 2.45 GHz low voltage RF transceiver SA2421 DESCRIPTION PIN CONFIGURATION The SA2421 transceiver is a combined low–noise amplifier, receive mixer, transmit mixer and LO buffer IC designed using a 20 GHz fT BiCMOS process, QUBiC2, for high–performance low–power communication systems for 2.4–2.5 GHz applications. The LNA has a 3.2 dB noise figure at 2.45 GHz with 14.3 dB gain and an IP3 intercept of –3 dBm at the input. The wide–dynamic–range receive mixer has a 11.2 dB noise figure and an input IP3 of +2.5 dBm at 2.45 GHz. The nominal current drawn from a single 3 V supply is 34 mA in transmit mode and 20 mA in receive mode. The SA2421 differs from the SA2420 by removal of the LO doubler and LO switch. The LNA reverse isolation is improved, and a separate pin is allocated for the transmit output. DH Package GND 1 24 VCC LNA IN 2 23 LNA OUT GND 3 22 GND GND 4 21 ATTEN SW Rx IF OUT 5 20 GND Rx IF OUT 6 19 Rx IN Tx IF IN 7 18 GND Tx IF IN 8 17 Tx OUT GND 9 16 GND LOP 10 15 GND Tx/Rx 11 14 VCC LO LOM 12 13 CHIP EN FEATURES • Low current consumption: 34 mA nominal transmit mode and 20 mA nominal receive mode • High system power gain: 24 dB (LNA + Mixer) at 2.45 GHz • Excellent gain stability versus temperature and supply voltage • Separate Rx IN and Tx OUT pins • Wide IF range: 50–500 MHz • –10dBm typical LO input power • Improved LNA reverse isolation S12 • TSSOP24 package SR01756 Figure 1. Pin configuration APPLICATIONS • IEEE 802.11 (WLAN) • 2.45 GHz ISM band ORDERING INFORMATION DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG # –40°C to +85°C SA2421DH SOT355-1 24-Pin Plastic Thin Shrink Small Outline Package (Surface-mount, TSSOP) BLOCK DIAGRAM VCC LNA OUT GND 24 23 22 ATTEN SW 21 GND Rx IN GND Tx OUT GND 20 19 18 17 16 GND VCC LO CHIP EN 15 14 13 11 12 PRE-DRIVER BPF ATTENUATOR LNA RX RX TX LO BUFFER X1 10 1 2 3 4 5 6 7 8 9 GND LNA IN GND GND Rx IF OUT Rx IF OUT Tx IF IN Tx IF IN GND LOP Tx/Rx LOM SR01757 Figure 2. SA2421 block diagram 2000 Mar 13 2 853-2189 23308 Philips Semiconductors Product specification 2.45 GHz low voltage RF transceiver SA2421 ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VCC Supply voltage VIN Voltage applied to any pin RATING UNITS –0.3 to +6 V –0.3 to (VCC + 0.3) V PD Power dissipation, Tamb = 25°C (still air) 24-Pin Plastic TSSOP 555 mW TJMAX Maximum operating junction temperature 150 °C PMAX Maximum power (RF/IF/LO pins) +20 dBm TSTG Storage temperature range –65 to +150 °C NOTES: 1. Transients exceeding these conditions may damage the product. 2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, and absolute maximum ratings may impact product reliability θJA: 24-Pin TSSOP = 117°C/W 3. IC is protected for ESD voltages up to 2000 V, human body model. RECOMMENDED OPERATING CONDITIONS SYMBOL RATING UNITS VCC Supply voltage PARAMETER 2.7 to 5.5 V Tamb Operating ambient temperature range –40 to +85 °C DC ELECTRICAL CHARACTERISTICS VCC = +3V, Tamb = 25°C; unless otherwise stated. SYMBOL PARAMETER TEST CONDITIONS LIMITS MIN TYP MAX UNITS ICCTX Total supply current, Transmit Tx/Rx = Hi 22 34 42 mA ICCRX Total supply current, Receive Tx/Rx mode = Lo, LNA = Hi gain 14 20 26 mA 10 µA ICC OFF Power down mode Tx/Rx = GND Atten SW = VCC Enable = GND VLNA-IN LNA input voltage Receive mode VLO GHz 0.855 LO buffer DC input voltage Tx/Rx = Lo VTX IF Tx Mixer input voltage Tx/Rx = Hi 1.7 V VTX IFB Tx Mixer input voltage Tx/Rx = Hi 1.7 V Logic 1 6 µA Logic 0 0 µA IBIAS S 2000 Mar 13 Input bias current 3 –0.1 V VCC V Philips Semiconductors Product specification 2.45 GHz low voltage RF transceiver SA2421 AC ELECTRICAL CHARACTERISTICS VCC = +3 V, Tamb = 25°C; LOIN = –10 dBm @ 2.1 GHz; fRF = 2.45 GHz; unless otherwise stated. SYMBOL PARAMETER TEST CONDITIONS LIMITS MIN –3σ TYP +3σ MAX UNITS fRF RF frequency range3 2.4 2.45 2.5 GHz fIF IF frequency range3 300 350 400 MHz LNA High gain mode (In = Pin 2; Out = 23) S21 Amplifier gain LNA gain = Hi S12 Amplifier reverse isolation LNA gain = Hi –32 dB S11 Amplifier input match1 LNA gain = Hi –10 dB S22 Amplifier output match1 LNA gain = Hi –9 dB ISO Isolation: LOX to LNAIN LNA gain = Hi –43 dB Amplifier input 1dB gain compression LNA gain = Hi –15 dBm IP3 Amplifier input third order intercept f1 - f2 = 1 MHz, LNA gain = Hi –4.5 –3.2 –1.9 dBm NF Amplifier noise figure (50Ω) LNA gain = Hi 3.1 3.2 3.3 dB –18.5 –19.4 –20.3 dB P-1dB 13.3 14.3 15.3 dB LNA High Overload Mode (low gain mode) S21 Amplifier gain LNA gain = Low S12 Amplifier reverse isolation LNA gain = Low –26 dB match1 S11 Amplifier input LNA gain = Low –8 dB S22 Amplifier output match1 LNA gain = Low –8 dB ISO Isolation: LOX to LNAIN LNA gain = Low –45 dB Amplifier input 1dB gain compression LNA gain = Low 2 dBm IP3 Amplifier input third order intercept f1 – f2 = 1 MHz, LNA gain = Low 18 dBm NF Amplifier noise figure (50 Ω) LNA gain = Low 18.5 dB P-1dB Rx Mixer (Rx IN = Pin 19, IF = Pins 5 and 6, LO = Pin 10 or 12, PLO = –10 dBm) PGC S11–RF Power conversion gain into 50 Ω : matched to 50 W using external balun circuitry. 9.5 Input match at RF (2.45 GHz)1 NFM SSB noise figure (2.45 GHz) (50 Ω) P-1dB Mixer input 1 dB gain compression IP3 fS = 2.45 GHz, fLO = 2.1 GHz, fIF = 350 MHz Input third order intercept 10 10.5 –11 9.8 11.2 dB 12.5 –10.5 f1 – f2 = 1MHz 1.8 2.2 dB dB dBm 2.6 dBm Rx Mixer Spurious Components (PIN = P-1dB) PRF-IF RF feedthrough to IF4 CL = 2 pF per side -35 dBc PLO-IF IF5 CL = 2 pF per side -32 dBc 2000 Mar 13 LO feedthrough to 4 Philips Semiconductors Product specification 2.45 GHz low voltage RF transceiver SA2421 AC ELECTRICAL CHARACTERISTICS (continued) SYMBOL PARAMETER TEST CONDITIONS LIMITS MIN –3σ TYP +3σ 22.5 23 23.5 MAX UNITS Tx Mixer (Tx OUT = Pin 17, IF = Pins 7 and 8, LO = Pin 10 or 12, PLO = –10 dBm) PGC S11–RF Power conversion gain: RL = 50 Ω RS = 50 Ω Output match at RF (2.45 GHz)1 NFM SSB noise figure (2.45 GHz) (50 Ω) P-1dB Output 1dB gain compression IP3 fS = 2.45 GHz, fLO = 2.1 GHz, fIF = 350 MHz Output third order intercept dB –10 10.9 11.2 dB 11.5 dB 4.2 f1 – f2 = 1 MHz 10.1 12.2 dBm 14.3 dBm Tx Mixer Spurious Components (POUT = P–1dB) PIF-RF PLO-RF PIMAGE-RF IF feedthrough to RF4 LO feedthrough to RF5 Image feedthrough to RF6 –50 dBc –22 dBc –20 dBc LO Buffer PLO IN LO drive level S11-LO Mixer input match (LO = 2.1 GHz) fLOG LOG frequency –15 –10 –5 –10 range3 1.9 2.1 dBm dB 2.3 GHz Switching2 tRx-Tx Receive-to-transmit switching time 1 µs tTx-Rx Transmit-to-Receive switching time 1 µs tPOWER UP Chip enable time 1 µs tPWR DWN Chip disable time 1 µs NOTES: 1. With simple external matching 2. With 50 pF coupling capacitors on all RF and IF parts 3. This part has been optimized for the stated frequency range. Operation outside this frequency range may yield performance other than specified in this datasheet. 4. Measured 5dB lower than 1dB compression point, with typical output matching network. 5. Measured at 1dB compression point. 6. With typical output matching network (no image reject mixer is used). 2000 Mar 13 5 Philips Semiconductors Product specification 2.45 GHz low voltage RF transceiver SA2421 Table 1. Truth Table Mode RX Mixer TX Mixer and Predriver N/S off off +14.3 dB on off Chip-En ATT-SW TX–RX 0 X X Sleep 1 1 0 Receive 1 0 0 Receive –19 dB on off 1 X 1 Transmit N/S off on this option is internal and is controlled externally by high and low logic to the pin. When the LNA is switched into the attenuation mode, active matching circuitry (on-chip) is switched in (reducing the number of off-chip components required). To reduce power consumption when the chip is transmitting, the LNA is automatically switched into a “sleep” mode (internally) without the use of external circuitry. FUNCTIONAL DESCRIPTION The SA2421 is a 2.45 GHz transceiver front-end available in the TSSOP-24 package. This integrated circuit (IC) consists of a low noise amplifier (LNA) and up- and down-converters. There is an enable/disable switch available to power up/down the entire chip in 1 µs, typically. This transceiver has several unique features. The LNA has two operating modes: 1) high gain mode with a gain = +14.3 dB; and 2) low gain mode with a gain –19 dB. The switch for 2000 Mar 13 LNA Gain 6 Philips Semiconductors Product specification SA2421 23 4.0 22 3.8 21 3.6 Noise (dB) Current (mA) 2.45 GHz low voltage RF transceiver 20 19 18 3.4 3.2 3.0 17 2.8 –40_C 0_C 25_C 70_C 85_C –40_C 0_C TEMPERATURE (°C) 2.7V 3.0V 3.8V 5.5V 2.7V SR02262 Figure 3. LNA / Receive Supply Current vs Supply Voltage and Temperature 70_C 85_C 3.0V 3.8V 5.5V SR02265 Figure 6. LNA Noise Figure vs Supply Voltage and Temperature 15 11.5 14 10.5 Gain dB Gain (dB) 25_C TEMPERATURE (°C) 13 9.5 12 8.5 –40_C 0_C 25_C 70_C 85_C –40_C 0_C TEMPERATURE (°C) 2.7V 3.0V 25_C 70_C 85_C TEMPERATURE (°C) 3.8V 5.5V 2.7V SR02263 Figure 4. LNA Gain vs Supply Voltage and Temperature 3.0V 3.8V 5.5V SR02266 Figure 7. RX Gain vs Supply Voltage and Temperature 3.0 –1.0 –1.5 2.5 IP3 (dBm) IP3 (dBm) –2.0 –2.5 –3.0 –3.5 –4.0 2.0 1.5 –4.5 –5.0 1 –5.5 –40_C –40_C 0_C 25_C 70_C 0_C 85_C 25_C 70_C 85_C TEMPERATURE (°C) TEMPERATURE (°C) 2.7V 2.7V 3.0V 3.8V 5.5V 3.8V 5.5V SR02267 Figure 8. Receive Input IP3 vs Supply Voltage and Temp Figure 5. LNA Input IP3 vs Supply Voltage and Temperature 2000 Mar 13 3.0V SR02264 7 Philips Semiconductors Product specification 2.45 GHz low voltage RF transceiver SA2421 12.5 29 27 12.0 Gain (dB) NF (dB) 25 11.5 11.0 23 21 19 10.5 17 10 15 –40_C 0_C 25_C 70_C 85_C –40_C 0_C TEMPERATURE (°C) 2.7V 3.0V 3.8V 5.5V 2.7V SR02268 Figure 9. Receive Noise Figure vs Supply Voltage and Temp –9.5 P–1dB (dBm) Output IP3 (dBm) –10.0 –10.5 –11.0 –11.5 –12.0 –12.5 –13 0_C 25_C 3.0V 70_C 85_C –40_C 3.8V 5.5V 0_C 2.7V SR02269 37 35 NF (dB) Current (mA) 36 34 33 32 31 30 25_C 3.0V 70_C 3.8V 85_C –40_C SR02271 25_C 70_C 85_C 3.0V 3.8V 5.5V SR02272 0_C 25_C 70_C 85_C TEMPERATURE (°C) 5.5V 2.7V SR02270 Figure 11. Transmit Current vs Supply Voltage and Temp 2000 Mar 13 5.5V 13.0 12.5 12.0 11.5 11.0 10.5 10.0 9.5 9.0 8.5 8 TEMPERATURE (°C) 2.7V 3.8V Figure 13. Transmit Output IP3 vs Supply Voltage and Temp 38 0_C 3.0V TEMPERATURE (°C) Figure 10. RX 1dB Compression vs Supply Voltage and Temp –40_C 85_C 20 18 16 14 12 10 8 6 4 2 0 TEMPERATURE (°C) 2.7V 70_C Figure 12. Transmit Gain vs Supply Voltage and Temp –9.0 –40_C 25_C TEMPERATURE (°C) 3.0V 3.8V 5.5V SR02273 Figure 14. Transmit Noise Figure vs Supply Voltage and Temp 8 Philips Semiconductors Product specification SA2421 9 8 7 6 5 4 3 2 1 0 –1 Receive Gain (dB) P–1dB (dBm) 2.45 GHz low voltage RF transceiver –40_C 0_C 25_C 70_C 85_C 12.0 11.5 11.0 10.5 10.0 9.5 9.0 8.5 8.0 7.5 7 –18 –16 –14 TEMPERATURE (°C) 2.7V 3.0V 3.8V –12 –10 –8 –5 –2 LO Input (dBm) 5.5V –40C SR02274 0C +25C +70C +85C SR02276 Figure 17. Receive Gain vs LO Input over Temp Range –10 26 –11 25 –12 24 Transmit Gain (dB) P–1dB (dBm) Figure 15. TX 1dB compression vs Supply Voltage and Temp –13 –14 –15 –16 –17 23 22 21 20 19 18 –18 –40_C 25_C 17 –18 85_C –16 TEMPERATURE (°C) 2.7V 3.0V 3.8V –14 –12 –10 –8 –5 –2 LO Input (dBm) 5.5V –40C SR02275 0C +25C +70C +85C SR02277 Figure 16. LNA 1dB compression vs Supply Voltage and Temp Figure 18. Transmit Gain vs LO Input over Temp Range The Rx IN port is matched to 50 Ω and has an input IP3 of +2.2 dBm (mixer only). The down-convert mixer is buffered and has open collectors at the pins to allow for matching to common SAW filters. The up convert mixer has an input pin to output pin gain of 23 dB. The output of the up-converter is designed for a power level = +4.2 dBm (P–1dB). 2000 Mar 13 9 2000 Mar 13 J3 J2 10 V cc Tx IN 350MHz Rx OUT 350MHz C7 100pF C4 3.9pF V cc S1 Figure 19. J4 C8 8.2pF L3 33nH J1 LNA IN L2 39nH LO 2.1GHz C6 10pF C5 SEL (0pF–1.0pF) C3 10pF C2 SEL (0pF–1.0pF) C16 100pF L4 33nH C11 1.0pF C10 100pF C9 8.2pF L5 2.7nH C1 1pF L1 3.9nH cc Vcc LO CHIP EN LOM 12 GND GND Tx OUT GND Rx IN GND ATTEN SW GND Tx/Rx LOP GND Tx IF IN Tx IF IN V LNA OUT SA2421 Rx IF OUT Rx IF OUT GND GND LNA IN GND V cc 11 10 9 8 7 6 5 4 3 2 1 U1 1 2 JP1 13 14 15 16 17 18 19 20 21 22 23 24 V cc S2 L7 1.2nH S3 C15 .1uF C17 10uF + V cc C13 33pF L6 2.7nH V cc J5 TxRF OUT 2.45GHz J6 RxRF IN 2.45GHz C12 100pF C14 100pF V cc J7 LNA OUT Philips Semiconductors Product specification 2.45 GHz low voltage RF transceiver SA2421 SR01758 Philips Semiconductors Product specification 2.45 GHz low voltage RF transceiver SA2421 TSSOP24: plastic thin shrink small outline package; 24 leads; body width 4.4 mm 2000 Mar 13 11 SOT355-1 Philips Semiconductors Product specification 2.45 GHz low voltage RF transceiver SA2421 Data sheet status Data sheet status Product status Definition [1] Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. [1] Please consult the most recently issued datasheet before initiating or completing a design. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Disclaimers Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Copyright Philips Electronics North America Corporation 2000 All rights reserved. Printed in U.S.A. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088–3409 Telephone 800-234-7381 Date of release: 03-00 Document order number: 2000 Mar 13 12 9397 750 06949